BF245A Search Results

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

Contextual Info: BF245A/2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)25m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m¥ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)0.25

BF245B

Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Source Voltage VDS ±30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate −Source Voltage VGS 30 Vdc ID 100 mAdc IG f 10 mAdc 350

Contextual Info: BF245A TO C _ y v _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended fo r applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

Contextual Info: £Pioducti, me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 BF245A; BF245B: BF245C U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 N-channel silicon field-effect transistors FEATURES FAX: (973) 375.3960 PINNING • Interchangeabillty of drain and source connections

BF245

Abstract: BF244 JFET BF245 BF245 application note BF245A application notes BF245A BF244B BF244A bf245 equivalent bf245c equivalent
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID Forward Gate Current

BF245C

Abstract: BF245B BF245A bf245c equivalent BF245C NATIONAL
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors

bf245c

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors

BF245C

Abstract: BF245B BF245A
Contextual Info: BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage

bf245a

Abstract: bf245b
Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc ID 100 mAdc Forward Gate Current

BF245

Abstract: bf245b BF245C bf245c equivalent BF245A BF245B PHILIPS application notes BF245A MGE786
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

BB530

Contextual Info: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

BF245A

Abstract: Transistor BF245A bf245-a
Contextual Info: TllOñBb 0Db74b5 E3T IPHIN BF245A TO C N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in t.f. and d.c. amplifiers, and in h.f. amplifiers.

BF245

Abstract: bf245b JFET BF245 BF245A BF245C BF245C JFET
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID 100 mAdc Forward Gate Current

BF245C

Abstract: bf245b BF245A BF-215 application notes BF245A BF245B PHILIPS mqe7 MBH555
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections PIN SYMBOL • Frequencies up to 700 MHz. 1 2 d drain s source APPLICATIONS

BF245G

Abstract: BF245A BF245AI application notes BF245A n627 BF245B BF245C
Contextual Info: ^53^31 00E3inb N AMER T47 • APX PHILIPS/DISCRETE b7E BF245A TO C T> N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended fo r applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

JFET BF245

Abstract: BF245 BF244A
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID Forward Gate Current

bf245c

Abstract: BF245A bf245b BF245B Philips Field-Effect Transistors BH553
Contextual Info: Philips Semiconductors Product specification N'Channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections • Frequencies up to 700 MHz. APPLICATIONS PIN SYMBOL 1 d drain 2 s source

Contextual Info: Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor BVgss Device No. Case Style BF244A BF244B BF244C BF245A TO-92 TO-92 TO-92 TO-92 30 30 30 30 1 1 1 BF245B BF245C B F 256A BF256B TO-92 TO-92 TO-92 TO-92 2-80 BF256C TO-92 BSR56 TO-236

BF245A

Abstract: OF TRANSISTOR AT 30B to92 ge-2 transistor M3B114 Transistor BF245A BF245B BF245C BF245C transistor
Contextual Info: TllDñBb ÜDb74L5 B3T IPHIN BF245ATO C N -C H A N N E L SILICON F IE L D -E F F E C T T R A N S IS T O R S General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in t.f. and d.c. am plifiers, and in h ,f. am plifiers.

transistor BF245b

Abstract: BF245A BF245A/3 Transistor BF245A BF245C BF245A-B-C BB532
Contextual Info: b BE D WÊ bbiBTEM _N A P C / P H I L I P S DDTSST? 113 W Ê S I C 3 SEMICOND _ BF245A TO C J N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO -92 variant; intended fo r applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

BF245A

Abstract: BF256 BF244A BF244B BF244C BF245B BF245C BF256A BF256B BF256C
Contextual Info: si°i- s o q Pro Electron Series . D iscrete POWER & Signal Technologies National Sem iconductor~ _ ^ JFET Pro Electron Series HP 'd nA *DSS ^GS BF244A BF244B BF244C BF245A TO-92 TO-92 TO-92 TO-92 30 30 30 30 1 1 1 1 5 5 5 5 20 20 20 20 0.5 0.5 0.5

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

2N5247

Abstract: 2N5952 2N5950 jfet 2n5952 PN4303 2N5246 2N5458 2N5459 2N5484 2N5485
Contextual Info: N-Channel JFET Transistors Part No. BVGSS Min. VP 2N5246 2N5247 2N5458 2N5459 2N5484 2N5485 2N5950 2N5952 BF245A PN4118 PN4303 PN5434 TIS73 V 30 30 25 25 25 25 30 30 30 40 30 25 30 Min. (V) 0.50 1.50 1.00 2.00 0.30 0.50 2.50 1.30 0.50 1.00 1.00 4.00 2N4338