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    Microchip Technology Inc 2N3851

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    Microchip Technology Inc 2N3853

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    Microchip Technology Inc 2N3850

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    onsemi 2N3859A

    TRANS NPN 60V 0.5A TO92-3
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    2N385 Datasheets (353)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N385 Germanium Power Devices Germanium NPN Transistors Scan PDF
    2N385 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N385 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N385 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N385 Unknown GE Transistor Specifications Scan PDF
    2N385 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N385 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N385 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N385 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N385 Unknown Vintage Transistor Datasheets Scan PDF
    2N385 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3850 API Electronics Short form transistor data Short Form PDF
    2N3850 General Diode Transistor Selection Guide Scan PDF
    2N3850 General Transistor Power Transistor Selection Guide Scan PDF
    2N3850 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3850 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3850 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3850 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3850 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3850 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ...

    2N385 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base


    Original     		PDF 2N3859A 300mA. PN100

    2N3859A

    Abstract: npn general purpose amplifier PN100
    Text: 2N3859A E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N3859A PN100 2N3859A npn general purpose amplifier

    BF394 MOTOROLA

    Abstract: 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 2N3845 2N3845A 2N3855A 2S0654 TEC80130 TEC80130 2SC828 BF394 BF3950 2N1278 ~~~~~9 15 20 BF238 BF215 BF215 BF226 BF226 NR4210S NR421FS 2SC733 ~~g~~~ 25 30 BFW29 BFW29 BFW29 2SC367G 2SC504 2SC504 2SC504 2SC509G


    Original     		PDF 2N3845 2N3845A 2N3855A 2S0654 TEC80130 2SC828 BF394 BF3950 2N1278 BF394 MOTOROLA 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G

    Untitled

    Abstract: No abstract text available
    Text: 2N3855 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3855 Freq130M

    Untitled

    Abstract: No abstract text available
    Text: 2N3856 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3856 Freq140M

    Untitled

    Abstract: No abstract text available
    Text: 2N3859 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)18 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3859 Freq90M

    2N3859A

    Abstract: 2N3859 F63TNR PN100 PN2222N CBVK741B019
    Text: 2N3859A E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N3859A PN100 2N3859A 2N3859 F63TNR PN2222N CBVK741B019

    PE255B

    Abstract: BC150 CS9014 2N2244 LOW-POWER SILICON NPN 2N5137 ST700 2N2245 PE254 cs901
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 2N2711 2N2713 SG104 2N3854 BSY73 2N2926 CS9017 CS9017 MPS9411 BSY81 ~~1~~31 15 20 PN5133 2N4252 2N5133 MPS9416 CS9014 2N3721 2N3855 2N5183 ~~g~~~ 25 30 2N2712 MPS2712 MPS2716 2N2714 BSY72 2N2716 40231 40234


    Original     		PDF 2N2711 2N2713 SG104 2N3854 BSY73 2N2926 CS9017 MPS9411 BSY81 PE255B BC150 CS9014 2N2244 LOW-POWER SILICON NPN 2N5137 ST700 2N2245 PE254 cs901

    BC417

    Abstract: 2SA544 2N5124 LOW-POWER SILICON PNP 2N5120 BF541
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 - 25 30 BC350B BC350L 2SA544 2SA544 2SA544 2SA552 KT2091 KT5011 BC807 BC636 92GE77A BF541 2N3857 BC204 TMPA813 2N5119 2N5122 2N5122 2N5122 2N5125 ~~~g~ BC281 A MMBA813S2 MMBA813S2 2SA813S2 ZTX503 ZT183


    Original     		PDF BC350B BC350L 2SA544 2SA552 KT2091 KT5011 BC807 BC636 BC417 2N5124 LOW-POWER SILICON PNP 2N5120 BF541

    2N3859A

    Abstract: PN100
    Text: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base


    Original     		PDF 2N3859A 300mA. PN100 2N3859A

    Untitled

    Abstract: No abstract text available
    Text: 2N3858 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)18 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3858 Freq90M

    Untitled

    Abstract: No abstract text available
    Text: 2N3854 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3854 Freq100M

    Untitled

    Abstract: No abstract text available
    Text: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


    Original     		PDF fl4M03SS 0DDD105 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929

    2N3855A

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2902 (212| 227-600B FAX: (973) 376-0060 20 STERN AVE. 3PHINGF1S-D, NEW JERSEY 07081 U.SA 2N3855A, Silicon Transistor absolute maximum ratings: (25°C) (unless otherwise specified) Vollagei Collector to Emitter v .'iO VullS Emitter to Base


    Original     		PDF 227-600B 2N3855A, 2N3855A

    Untitled

    Abstract: No abstract text available
    Text: 2N3851 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3851 Freq20M time150n

    2N3859A

    Abstract: MPS6521 PN930 TIS97
    Text: This Material NPN Transistors cr NPN Low Level Amplifiers continued Ü1 a fc-j b-1 Copyrighted UJ V Device No. Case Style a CD PN930 o -E TO-92 (92) CBO V y ceo V EBO (V) Min (V) Min (V) Min 45 45 5 *CBO (nA) @ “ Max ' ' 10 By Its Respective tr ru 2N3859A


    OCR Scan     		PDF PN930 2N3859A MPS6521 TIS97 Hz-10

    Untitled

    Abstract: No abstract text available
    Text: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8 100 300 VCE 5 Vb e (sat) 1


    OCR Scan     		PDF 2N3751 2N3752 2N3850 2N3851 2N3852 O-111 O-114

    2N3859

    Abstract: 2N3860 2N3859A 2N3659 2N3858 E1307 2N3868 BA 4213 2N3658 2N3858-60
    Text: SOLI» STATE ÜÏ D E | 3Ö7S0Ö1 D G l T ^ n - Signal Transistors 2N3858-60, 2N3858A, 2N3859A Silicon Transistors TO-98 The GE/RCA 2 N 3 858,2N 3859 and 2N3860 are planar epitaxlal passivated NPN silicon transistors designed primarily for


    OCR Scan     		PDF 2N3858-60, 2N3858A, 2N3859A 2N3858 2N3859 2N3860 2N3858 2N3659 2N3858A 2N3859A E1307 2N3868 BA 4213 2N3658 2N3858-60

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3859A . TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum RatinQS


    OCR Scan     		PDF 2N3859A PN100

    2N5219

    Abstract: T0-92B 2N4286 2N4291 2N4289
    Text: Low Level and General Purpose Amplifiers M A X IM U M R A T IN G S TYPE NO. PO LA ­ R IT Y CASE H KE Pd Ic VcEO mW (mA) (V) min max le V CE max le (mA) (V) (V) (mA) 2 4.5 4.5 4.5 4.5 0.125 0.125 10 10 - 2N3859 2N3860 2N3900 2N3901 N N N N TO-92B TO-92B


    OCR Scan     		PDF 2N3859 2N3860 2N3900 2N3901 2N3903 2N3904 2N3905 2N3906 2N3946 2N3947 2N5219 T0-92B 2N4286 2N4291 2N4289

    2N3751

    Abstract: 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929
    Text: A P I ELE C TR ON IC S INC 2b 00^3592 A P I ELECTR ONI CS ¡>T| 00435^2 DQGD223 1 | INC 26C 00223 D - f ’-3 3 -& I COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929 2N3996 JAN


    OCR Scan     		PDF 0D0D223 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N4300 2N4305 2N4307 2N3853 2N3902 2N3928 2N3929

    2N3859A

    Abstract: No abstract text available
    Text: J*i L J I S 1 IméF * Discrete POW ER & Signal Technologies * I www»pw# SEMICONDUCTOR 2N3859A NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.


    OCR Scan     		PDF 2N3859A PN100 2N3859A

    TO111

    Abstract: 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996
    Text: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8


    OCR Scan     		PDF 2N3751 O-111/1 2N3752 2N3850 O-111 2N3851 2N3852 TO111 2N3853 2N3928 2N3929 2N3996

    2N3997 JAN to-111

    Abstract: 2N4116 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929
    Text: MJæ J E LE C T R O N IC S , INC. [ - t i COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 JAN 2N3996 JTX 2N3996 JTXV 2N3996 2N3997 JAN 2N3997 JTX 2N3997 JTXV 2N3997 2N3998 JAN 2N3998


    OCR Scan     		PDF 2N3751 O-111/1 2N3752 2N3850 O-111 2N3851 2N3852 2N3853 2N3997 JAN to-111 2N4116 2N3928 2N3929