2N3866 JANTXV Search Results

2N3866 JANTXV

Abstract: 2N3866A JAN
Contextual Info: 2N3866 A Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level for high-reliability applications. It is also available in a low profile UB package.

Contextual Info: 2N3866 A UB Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level for high-reliability applications. It is also available in a top hat leaded TO-205AD package.

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S

Contextual Info: 2N3866 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

Transistor 2N3866

Abstract: 2N3866 2N3866 JANTX
Contextual Info: 2N3866 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

2N3866 JANTXV

Contextual Info: 2N3866 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3866+JANTXV Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)30 V(BR)CBO (V)55 I(C) Max. (A)400m Absolute Max. Power Diss. (W)5.0# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition)55

2N3866 equivalent

Abstract: 2n3866a
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON

2N3866 equivalent

Abstract: 2N3866 2N3866A 2N3866 JANTX 2N3866 JAN 2N3866AUB Transistor 2N3866 2N3866UB 2N3866 JANTXV
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON

2N3866A JAN

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 18 September 2011. MIL-PRF-19500/398K 18 June 2011 SUPERSEDING MIL-PRF-19500/398J 26 January 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY,

transistor equivalents for 2n3866

Abstract: 2N3866 application note 2N3866 RF output Design 2N3866 clare mercury relay 2N3866A mercury clare 851 clare mercury 2N3866 application V/2N3866 equivalent
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 May 2002. INCH-POUND MIL-PRF-19500/398F 23 January 2002 SUPERSEDING MIL-PRF-19500/398E 11 September 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY

2N3866 application note

Abstract: 2N3866 2N3866 equivalent 2N3866A 2N3866 RF output Design 2N3866A JAN 851 clare relay 2N3866AUB 2N3866UB clare mercury relay
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 26 April 2010. INCH-POUND MIL-PRF-19500/398J 26 January 2010 SUPERSEDING MIL-PRF-19500/398H 27 July 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY,

SP2605F

Abstract: 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2N0718A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn
Contextual Info: Small Signal Transistors Small Signal Transistors Hermetic Seal Raytheon Semiconductor offers a wide variety of Industry standard and sole source high reliability (JAN, JANTX, Product 2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131"

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor