2N3866 ON SEMI Search Results

2N3866 MOTOROLA

Abstract: s-parameter 2N3866A 2n3866a Motorola 2N3866 motorola 2N3866
Contextual Info: MOTOROLA SC XSTRS/R F b3b?254 0QT4032 MOTOROLA b •MOTt T - 3 3 -¿>5 ■ SEMICONDUCTOR 2N38G6 2N3866A TECHNICAL DATA The RF Line 1.0 W - 400 M Hz HIGH FREQ UEN C Y TRANSISTOR NPN SILICON HIGH FREQ UEN C Y TRANSISTOR N P N S IL IC O N . . designed for am plifier and oscillator applications in m ilitary and

2N3866A JAN

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 18 September 2011. MIL-PRF-19500/398K 18 June 2011 SUPERSEDING MIL-PRF-19500/398J 26 January 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY,

transistor equivalents for 2n3866

Abstract: 2N3866 application note 2N3866 RF output Design 2N3866 clare mercury relay 2N3866A mercury clare 851 clare mercury 2N3866 application V/2N3866 equivalent
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 May 2002. INCH-POUND MIL-PRF-19500/398F 23 January 2002 SUPERSEDING MIL-PRF-19500/398E 11 September 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY

2N3866 application note

Abstract: 2N3866 2N3866 equivalent 2N3866A 2N3866 RF output Design 2N3866A JAN 851 clare relay 2N3866AUB 2N3866UB clare mercury relay
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 26 April 2010. INCH-POUND MIL-PRF-19500/398J 26 January 2010 SUPERSEDING MIL-PRF-19500/398H 27 July 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY,

RF 2N3866

Abstract: Transistor 2N3866 2N3866 CP205 chip die npn transistor die bonding
Contextual Info: PROCESS Central CP205 TM Small Signal Transistors Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 15 x 15 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 2.0 x 2.4 MILS EMITTER BONDING PAD AREA 2.0 x 2.7 MILS

2N5160

Contextual Info: me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N5160 The RF Line PNP SILICON AMPLIFIER TRANSISTOR PNP SILICON RF POWER TRANSISTORS . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment, Suitable for use as Class A,

Contextual Info: Small Signal Transistors V (V) (V) (M ) h :E (V) ic (m A) (V) VCE(SA (V) (m A) O VCBO v CEO v EBO ICBO ® v CBO P DESCRIPTION TYPE NO. < o m TO-39 Case (Continued) ‘ 'CEO *VCER *r (MHz) C0 b *on ‘ o ff NF (PF) (ns) (ns) (dB) •TYP *TYP TYP TYP

BC207b

Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
Contextual Info: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW

2N3806 2N3906

Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D
Contextual Info: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^

TO1C

Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
Contextual Info: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65

2N3444

Abstract: 2N3495 2N3665 n3742
Contextual Info: Small Signal Transistors TO-39 Case Continued T Y P E NO. D ESC R IPTIO N V C BO v CEO (V) (V) (V) (HA) @ lC h | =E v EBO IC B O v C B O <mA) (V ) ® v C E V C E (S A T ) @ ' C (m A ) (V ) (V) *'C E O *V C ER *T (M H z) C0 b *on ‘ o ff NF (PF) (n s )

2N5109 motorola

Abstract: 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1024/D SEMICONDUCTOR APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc.

MMBR2857LT1

Abstract: bcy59z 2N2222A zetex MICROSEMI 2N2222A MPSA96 BCY55 2N2907 PHILIPS SEMICONDUCTOR 2N2369 philips BC327BP BAV99 ON Semi
Contextual Info: 145 Adams Avenue Hauppauge, NY 11788 Phone 631 435-1110 Fax (631) 435-1824 www.centralsemi.com/eol EOL –LIFE SUPPORT List as of: March 30, 2001 Central Semiconductor Corp. will continue to manufacture the discrete semiconductors included on this list as long as there is an industry demand. For an update of this list please contact your sales

2N2369 avalanche

Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
Contextual Info: Application Note 122 January 2009 Diode Turn-On Time Induced Failures in Switching Regulators Never Has so Much Trouble Been Had By so Many with so Few Terminals Jim Williams David Beebe Introduction A potential difficulty due to diode turn-on time is that

MOTOROLA 2N5179

Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
Contextual Info: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R

AN72

Abstract: AN72F PM-5771 2N2369 avalanche an7212 2N2369 AVALANCHE PULSE GENERATOR an7210 application circuits of ic 74121 LM733 2tx-849
Contextual Info: Application Note 72 May 1998 A Seven-Nanosecond Comparator for Single Supply Operation Guidance for Putting Civilized Speed to Work Jim Williams INTRODUCTION In 1985 Linear Technology Corporation introduced the LT 1016 Comparator. This device was the first readily

2n310

Abstract: 2N2959
Contextual Info: small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION vCBO vCEO VEBO •CBO vCBO <HA V) (V) (V) (V) *VCER ® lc 0 VCE VCE(SAT) ® 'c hFE <"»A) 00 (V) (mA) *r (MHz) *0« (na) NF (pF) ("•) (*) TYP TYP TYP TYP MIN MAX MAX MIN MIN MIN 2N656A NPN AMPL/SWITCH

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any

ECG transistor replacement guide book free

Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Contextual Info: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a

LTvq

Abstract: ms10 8c diode LT1715IMS 2N3866 MOTOROLA MS10 8c 2N3866 MOTOROLA s parameters LT1715CMS LT1719 MS10 LT1715
Contextual Info: LT1715 4ns, 150MHz Dual Comparator with Independent Input/Output Supplies U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFast: 4ns at 20mV Overdrive 150MHz Toggle Frequency Separate Input and Output Power Supplies Low Power: 4.6mA per Comparator at 3V

E100K

Abstract: LT1715 LT1715CMS LT1719
Contextual Info: LT1715 4ns, 150MHz Dual Comparator with Independent Input/Output Supplies DESCRIPTION FEATURES n n n n n n n n n n n UltraFast: 4ns at 20mV Overdriven 150MHz Toggle Frequency Separate Input and Output Power Supplies Low Power: 4.6mA per Comparator at 3V Pinout Optimized for High Speed Use

Motorola transistors MRF 13S

Abstract: 10h350 nanosecond pulse stretcher PN Junction Diode varactor 1720i LT1112 LT1638 LT1720 LT1720CS8 LT1720IS8
Contextual Info: LT1720 Dual, 4.5ns, Single Supply 3V/5V Comparator with Rail-to-Rail Outputs U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4mA per Comparator Optimized for 3V and 5V Operation Pinout Optimized for High Speed Ease of Use

Contextual Info: LT1715 4ns, 150MHz Dual Comparator with Independent Input/Output Supplies DESCRIPTION FEATURES n n n n n n n n n n n UltraFast: 4ns at 20mV Overdriven 150MHz Toggle Frequency Separate Input and Output Power Supplies Low Power: 4.6mA per Comparator at 3V Pinout Optimized for High Speed Use

KEYPAD 4X3

Abstract: SBL-1 mixer enamelled copper wire swg table RADCOM 7805 IC6 74LS47 jm09k keypad 4x3 encoder maplin KEYPAD 4X3 SWITCH G3JI water level indicator using pic microcontroller
Contextual Info: a AN-557 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • 781/329-4700 • World Wide Web Site: http://www.analog.com An Experimenter’s Project for Incorporating the AD9850 Complete-DDS Device as a Digital LO Function in an Amateur Radio Transceiver*