BF257 Search Results

BF259

Abstract: BF257 BF258 BF258-BF259
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can Package INTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR TELEVISION REVEIVERS.

bf257

Abstract: BF257.258
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can Package INTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR TELEVISION REVEIVERS.

Contextual Info: BF257CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

bf258

Contextual Info: 'Zf v y ^ iß* \ ~"l ^ B F 257 • B F 258 ■ B F 259 'NPN HIGH VOLTAGE VIDEO AMPLIFIER .VîtfAÿï'^B ïÊSaWî?1,A ^ i K ! ■ÎXÂc-l^B « . V.d'.tr J THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACKAND-WHITE AND COLOUR TV-RECEIVERS.

7500B

Abstract: ic 7500B BF258 dc 7500B BF251 BF259 BF257-BF258-BF259 BF257 BP257 EF257
Contextual Info: THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACKAND-WHITE AND COLOUR TV-RECEIVERS. C E B ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage ^CBO Collector-Emitter Voltage Vq e O Emitter-Base Voltage

BF257

Abstract: BF259 BF258
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can Package INTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR

BF257DCSM

Contextual Info: BF257DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

Contextual Info: 3G E D • T 'ì a 'is a ? G o a D ^ s GL SGS-THOMSON J*l IILi g¥^MO(gS S G 3 ■ T ^ S Ï T o s BF257 BF258-BF259 S -T H O M S O N HIGH VOLTAGE VIDEO AMPLIFIERS D ESC RIPTIO N The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal

BF257

Abstract: BF259 BF258 transistors bf259 BF257 MOTOROLA BF258-BF259
Contextual Info: MOTOROLA SC XSTRS/R F 1E E 0 I k3b?E54 GOAtM? M | f - 3 t ' 2 Z \ - BF257' thru BF259 M A X IM U M R A T IN G S R a t in g Sym bol BF BF BF 257 258 269 U n it C o lle cto r-E m itte r V o lta g e VCEO 160 250 3 00 Vdc C o lle cto r-E m itte r V o lta g e

Contextual Info: BF257 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 160V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BF257CSM4 SILICON PLANAR NPN HIGH VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08

Contextual Info: BF257 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 160V 0.41 (0.016) 0.53 (0.021)

BF258

Abstract: BF257 BF259 BF257-BF258-BF259 bf258bf bf258 equivalent transistor BF 257 bf259 datasheet BF258-BF259 BF257 THOMSON
Contextual Info: BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.

BF336

Abstract: PE7058 transistor SE7055 BF338 2N5832 SE7056 BD115 BF152 fairchild to-106 2N5059
Contextual Info: FAIRCHILD TRANSISTORS PO W ER Item IC = 0.1 A 0» @ lc m VCEO hFE V Max Mln/Max o DEVICE NO. Polarity NPN PNP < POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING VQEO V Max @ ic A *T MHz Min(Typ) PD(Max) W T C= 25°C Package No. A Max Continuous 1 BF257

BF257

Contextual Info: BF257 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 160V 0.41 (0.016) 0.53 (0.021)

bf259

Abstract: bf258 BF258-BF259 BF257-BF258-BF259 Bf257
Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 | b3b?E54 GOÖbM? 4 | f-si-aai-BF257' thru BF259 M A X IM U M R A T IN G S R a tin g Sym bol BF BF BF 257 258 259 U nit CASE 79-04, STYLE 1 TO-39 TO-2Q5AD VCEO 160 250 3 0 0 Vdc Collector-Emitter Voltage VCER

BF258

Abstract: BF259 BF257 tranzystory BF258-BF259 bf 695 M100 BF257-BF258-BF259 C22B 0jm0
Contextual Info: TRANZYSTORY 20 - 74/2 n -p -n * BF257, BF258 i BF259 SWW 1156-223 Tranzystoiry krzem ow e p lan arn e Sredniej mocy w ielkiej cz^stotliwosci. Sg przeznaczone do stosow ania we w zm acniaczach duzych sygna!6w w ielkiej cz^stotliwoSci oraz w stopniach w yjsciowych w zm acniaczy w izyjnych odbiornik6w telew izji

BF257CSM4

Contextual Info: BF257CSM4 SILICON PLANAR NPN HIGH VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08

Contextual Info: BF257CSM4 SILICON PLANAR NPN HIGH VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08

BF259

Abstract: BF236 BF257 BF257-BF258-BF259 BF258
Contextual Info: ,> r *P> .r v^ v-r i->f f', '«s e m ì “ * I v/'vW J BF 257 • BF258 ■BF259 'NPN HIGH VOLTAGE VIDEO AMPLIFIER CASE TO-39 THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACKAND-WHITE AND COLOUR TV-RECEIVERS.

BF257

Abstract: BF258 BF259 bf258 equivalent BF257-BF258-BF259 BF259 CDIL
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON HIGH VOLTAGE POWER TRANSISTORS BF257, BF258, BF259 TO-39 Metal Can Package Intended for Video Output stages in Black and White and in Colour Television Receivers

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157