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    2N426 Search Results

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    2N426 Price and Stock

    Rochester Electronics LLC 2N4264

    TRANS NPN 15V 0.2A TO-92
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    DigiKey 2N4264 Bulk 2,240 1,150
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    Microchip Technology Inc 2N4261

    TRANS PNP 15V 0.03A TO-72
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    NAC 2N4261 100
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    Microchip Technology Inc 2N4261UB

    TRANS PNP 15V 0.03A UB
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    NAC 2N4261UB 100
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    Microchip Technology Inc JAN2N4261

    TRANS PNP 15V 0.03A TO-72
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    Microchip Technology Inc JANTX2N4261

    TRANS PNP 15V 0.03A TO-72
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    2N426 Datasheets (125)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    2N426
    Germanium Power Devices Germanium PNP Mesa Transistors Scan PDF 351.3KB 4
    2N426
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 70.73KB 1
    2N426
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.09KB 1
    2N426
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.99KB 1
    2N426
    Unknown GE Transistor Specifications Scan PDF 37.41KB 1
    2N426
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 143.58KB 1
    2N426
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 155.67KB 1
    2N426
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 106.46KB 1
    2N426
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 95.84KB 1
    2N426
    Unknown Vintage Transistor Datasheets Scan PDF 52.77KB 1
    2N426
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 88.05KB 1
    2N426
    Semitron Alloy Junction Germanium Transistor Scan PDF 378.08KB 3
    2N426
    Semitronics Alloy-Junction Germanium Transistors Scan PDF 270.79KB 3
    2N4260
    Semico Chip Type 2C4261 Geometry 0014 Polarity PNP - Pol=PNP / Pkg=TO72 / Vceo=15 / Ic=30m / Hfe=25min / fT(Hz)=.6G / Pwr(W)=0.2 Original PDF 28.03KB 1
    2N4260
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 207.28KB 1
    2N4260
    Motorola The European Selection Data Book 1976 Scan PDF 51.59KB 2
    2N4260
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.09KB 1
    2N4260
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 54.29KB 1
    2N4260
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 86.69KB 1
    2N4260
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 62.62KB 1
    ...

    2N426 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N4261

    Abstract: 2N4261UB
    Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV


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    MIL-PRF-19500/511 2N4261 2N4261UB 2N4261UB, T4-LDS-0150 2N4261 2N4261UB PDF

    Contextual Info: 2N4262 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition)


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    2N4262 Freq900M PDF

    Contextual Info: ^s.m.i-Condimto'i 'Lpioaucti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4261 Polarity PNP Features: • • Fast switching small signal silicon transistor. Housed in a TO-72 case.


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    2N4261 -65to PDF

    N2369

    Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
    Contextual Info: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12


    OCR Scan
    2N706 2N708 2N914 N2368 N2369 2N2369A 2N3227 BSX90 2N4260 2N4261 2N2368 2N3546 2N869A PDF

    2N4261

    Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX
    Contextual Info: 2N4261 Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J • JANTX level (2N4261JX)


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    2N4261 MIL-PRF-19500 2N4261J) 2N4261JX) 2N4261JV) 2N4261JS) MIL-STD-750 MIL-PRF-19500/511 2N4261 2N4261J 2N4261JS 2N4261JV 2N4261JX PDF

    Contextual Info: 2N4269S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


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    2N4269S O206AA) 10/10m 16-Jul-02 PDF

    Contextual Info: 2N4261UB Compliant available PNP Small Signal Silicon Transistor Qualified per MIL-PRF-19500/511 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N4261UB small signal transistor features ceramic bodied construction with a metal lid for military grade products per MIL-PRF-19500/511. It is also available with a ceramic lid in the


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    2N4261UB MIL-PRF-19500/511 2N4261UB MIL-PRF-19500/511. 2N4261 T4-LDS-0150-1, PDF

    2N4265

    Abstract: 2N4264 QS 100 NPN Transistor
    Contextual Info: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Collector-Emitter Voltage VCEO 15 12 Collector-Base Voltage v CBO Emitter-Base Voltage Characteristic 30 Unit Vdc Ve b o 6.0 Vdc Collector Current — Continuous Ic 200 mAdc Total Device Dissipation a T a = 25°C


    OCR Scan
    2N4264 2N4265 2N4265 O-226AA) 2N426S QS 100 NPN Transistor PDF

    2N4261

    Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX
    Contextual Info: 2N4261 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J


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    2N4261 MIL-PRF-19500 2N4261J) 2N4261JX) 2N4261JV) 2N4261JS) MIL-STD-750 MIL-PRF-19500/511 2N4261 2N4261J 2N4261JS 2N4261JV 2N4261JX PDF

    Contextual Info: 2N4261+JANTX Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10


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    2N4261 PDF

    2N4260

    Abstract: 2N4261
    Contextual Info: TYPES 2N4260, 2N4261 P-N-P SILICON TRANSISTORS B U L L E T IN N O . O L -S 7 3 1 1 9 3 3 , J U N E 1 9 7 3 DESIGNED FOR VHF AND UHF AMPLIFIER APPLICATIONS • High f j . . . 2 GHz Min 2N4261 • Low Capacitances . . . 2.5 pF Max Ccb and Ceb • Calculated f maxt . . . 1.27 GHz Min (2N4261)


    OCR Scan
    2N4260, 2N4261 2N4261) 2N4260 PDF

    2N4265

    Abstract: 2904S
    Contextual Info: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Unit Collector-Emltter Voltage Characteristic VCEO 15 12 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage 30 v EBO 6.0 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 25°C


    OCR Scan
    2N4264 2N4265 2N4265 O-226AA) 010332b 2904S PDF

    2n4269

    Contextual Info: 2N4269 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


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    2N4269 O206AA) 10/10m 16-Jul-02 2n4269 PDF

    Contextual Info: 2N4269 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


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    2N4269 O206AA) 10/10m 19-Jun-02 PDF

    2N4261

    Contextual Info: 2N4261 Chip: 4.5V; 30A geometry 0014; polarity PNP 4.99 Transistors . 1 of 1 Home Part Number: 2N4261 Online Store 2N4261 Diodes C hip: 4 .5 V; 3 0 A ge o m et ry 0 0 1 4 ; po larity PNP Transistors


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    2N4261 com/2n4261 2N4261 PDF

    nkt270

    Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
    Contextual Info: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385


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    2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 nkt270 Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801 PDF

    diode bsy28

    Abstract: BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28
    Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BSY17 BSY18 BSY18 EN744 2N3985 BF153 BSX90 BSX90 BSX90 2N4421 2N4421 BSX91 BSX91 BSX91 2N4265 2S131 2S131 2S131 2SC739 C111E ~~~~9 25 30 - 35 -40 45 - 50 55 60 65 70 75 80 -85 90 95 BSY28


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    BSY17 BSY18 EN744 2N3985 BF153 BSX90 2N4421 diode bsy28 BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28 PDF

    2n426

    Abstract: 2N4264 2n4265
    Contextual Info: 2N4264 2N4265 M AXIMUM RATINGS Symbol 2N4264 2 N4265 Unit C o lle c to r-E m itte r V o lta g e v CEO 15 12 Vdc C o lle c to r-B a s e V o lta g e v CBO E m itte r-B a s e V o lta g e Characteristic 30 v EBO 6.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s


    OCR Scan
    2N4264 2N4265 2N4264 N4265 O-226AA) 2N4264, 2n426 2n4265 PDF

    to18 package

    Abstract: 1455 JANTXV equivalent Shortform Transistor 2N4269S
    Contextual Info: 2N4269S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


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    2N4269S O206AA) 10/10m 2-Aug-02 to18 package 1455 JANTXV equivalent Shortform Transistor 2N4269S PDF

    Contextual Info: 2N4267 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)25 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC)


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    2N4267 PDF

    Contextual Info: 2N426 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)4.0u @V(CBO) (V) (Test Condition)1.5 h(FE) Min. Current gain.30 h(FE) Max. Current gain.60


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    2N426 PDF

    Contextual Info: 2N4261+JANTXV Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10


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    2N4261 PDF

    Contextual Info: 2N4264 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)135þ I(CBO) Max. (A).1uØ÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.


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    2N4264 Freq300M PDF

    Contextual Info: 2N4261 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10


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    2N4261 PDF