2N4297 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2N3583

Abstract: 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430
Contextual Info: 1 1 0 J)L T R A N S I S T O R - CO • w - r w j ^ U I O D E ^ I H IN C A N S I A 4D S T O R C O D | 5646352 0D D D 13E 2 I M G - . . 8 4 P 1 3 2 D T > 3 2 » 0 5 ~ D1QDE TR^f\l515TQR CGJfUC. 201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561

MD14

Abstract: TRSP4015 TRSP2755S TRSP3015 TRSP3015S TRSP3505 TRSP3515S TRSP4015S TRSP4255S TRS4506
Contextual Info: HIGH VOLTAGE flO DE • 4 471D7Ö 00000G7 T SILICON PNP - POWER TRANSISTORS MAX. COLL. DISS. in Free Air #25“ C MAX. THERMAL RES. Junctiqp to Case - h FE BIAS T E M R Watts Is Ic BV cb q BV “ ° BVcE° B V « , @280 U 0118»» (AMP) (AMP) (VOLT) (VO LT) (VOLT)

5N520

Contextual Info: General Transistor Corporation CASE le MAX V c e o (s u s ) = NPN Power Transistors VCE(SAT) IC/1B (V®A/A) VBE IC/VCE (V®A/V) 25-100 @ .5/4 40-200 @.5/10 25-100 @1/10 25-100 @1/10 1 @ 5/.05 5 @ 1/.125 .75 @ 1/.125 .75 @ 1/.125 1.7 @.5/4 1.4@ 1/10 .25

bu808 equivalent

Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
Contextual Info: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200

15j03

Abstract: 40328 npn darlington 400v 15a pnp 400v 10a 2N4296 BU326S 2N3583 2N3584 2N4297 2N4298
Contextual Info: K CO INC ¿ A4D D g 2 Û 4 A 3 S E Od U i Q D j g ~j K A Ñ ¿ I S T f t R TKir*. ,S 4 D 00 13* 0DD013E B D T .2 V Q C Ì DIODE TRál\l5J5TQR CO. INC. 201 686-0400 • Telex; 139-385 • Outside NY & NJ area call TO LL FR E E 800-526-4561 FAX No. 201-575-5863

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3740 2N3741 2N3744 2N3861 2N3746
Contextual Info: I □ 1 ru X 0 CD Q . 2 E o o o o o lo io lo o o CM CM ru cQ o o o o o CO CO CO CO CO O O O LO lo CO LO evi CM O O O O O T“ T T“ T“ C\Ì Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz Z Z Z Z Z

Contextual Info: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw

Contextual Info: NEW E N 6 L A N D SEMICONDUCTOR S'îE ]> ÜQÜDDMT NPN TO-66 077 INES lc MAX = 1-7A Vce<xsu$) = 3 5-4 00 V = .75-50 M Hz I t Case 8 0 9 T'33' o I Type No. PNP Comple­ ment VCEfl (SUS) (V) 1C (MAX) W hFI IC/VCE (min-max ® A/V) Ptt @ TC = 2 5 °C (Watts)

Contextual Info: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013

Contextual Info: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘

transistor 350-100

Abstract: 40328 BU326S npn darlington 400v 15a 2N3583 2N4296 2N4297 2N4298 2N4299 2N5427
Contextual Info: 1 1 0 1>L T K A N X I S T O R — w ~r U o - ¡7 7 t CO INC w 34D » 1 Zfl4fl3SS 0GD0132 B «ifci - . , . i 1 j l , 3 3 - 0 9 DIODE TRd \J515T0R CD. INC. (201) 686-0400 • Telex; 139-385 • Outside NY & NJ area call TO LL FR E E 800-526-4561 FAX No. 201-575-5863

2SK1045

Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Contextual Info: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

STI-3007

Abstract: STI-3007 A STI3007 2N546b SE7020 2N3583 2N3584 2N3738 2N3739 2N4296
Contextual Info: SE MICO ND UC TO R TECHNOLOGY OSE D I fl13b 4 Sfl 00□0221 1 1 SEMICONDUCTOR TECHNOLOGY, INC. ^ L l l i L y N J ; U L HIGH VOLTAGE SILICON MEDIUM POWER TRANSISTORS • -r ' w oO -n/ g 0, 0H c c , ct t J 3131 S.E. Jay Street " Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511

Contextual Info: NE III EN6LAND SEMICONDUCTOR S'ìE ]> bSt.M R'ìa OOOOOM' ì NPN TO-66 077 H N ES lc M A X = 1 -7 A V ce<xsus) = 3 5 -4 0 0 V fi = .75-50 MHz Case 809 T '3 S ' O / le {MAX) W 2N6049 2N6211 2N6212 2N6213 55 250h 300* 400h 4 1 5 5 25-100 5/4 40-200® 5/10

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Contextual Info: = 1-7A V ceo sus = 3 5 -4 0 0 V fT = .75-50 M Hz lc(MAX) IMPN TO-66 Case 8 0 9 PNP VCE (SAT) @ IC / IB (V @ A /A ) VCEO (SUSI (MAX) (V) (A) 2N6049 2N6211 2N6212 2N6213 55 250b 300h 4001* 4 1 5 5 25-100 . 5/4 40-200®.5/10 25-100@1/10 25-100@1/10 10.5/.05

5N520

Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278
Contextual Info: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V

STi20

Abstract: SK3537
Contextual Info: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 >= 40346V2 40346V2 40346V2 DTL1657 2N3583 SPT3440 MPSU04 MPSU04 DTL1638 2N6721 DTl1648 TRS4926 TRS4926 TRS4926 STI2006 MST20B MST20B STI20 STI205 TRS2006 ~~kJgg8 25 30 2N5662 SK3537 2N6722 2N6722