2N435 Search Results

2N3644

Abstract: 2N3638 2N3638A 2N3645 CIL297 2N4356 2N4354 2N4355 CIL295 CIL296
Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP M ax m um P ating s 2N4356 V CEO (V) Min (V) Min BO SO V EBO (V) Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 45 5.0 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat) (V) Min Max

2n4351

Contextual Info: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted FEATURES • • • • • Low ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage

2N4358

Contextual Info: 2N4358 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 240V 0.41 (0.016)

2N4356

Abstract: 50no25 bjt 147 222AB
Contextual Info: 2N4356 Si PNP Lo-Pwr BJT 5.90 Transistors Bipolar Silicon PNP Low. 1 of 1 Home Part Number: 2N4356 Online Store 2N4356 Diodes Si PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

mosfet 2n4351

Contextual Info: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 Maximum Temperatures Storage Temperature -55 to +150 °C

GERMANIUM SMALL SIGNAL TRANSISTORS

Abstract: AD142 AD143 GERMANIUM SMALL SIGNAL PNP TRANSISTORS 2N4358 AU113 BSX29 sgs-ates transistors sgs-ates germanium transistor pnp
Contextual Info: S G S -A T E S Sem iconductors Transistors - PNR/Germanium P N P High Voltage Transistors < O< 0.4 0.7 0.7 150 150 240 _ W BFW 43 BFW 44 2N4358 o CD U Code 5 > Max P t o t @ T a m b — 25 C o R E FE R E N C E T A B L E S 150 150 — (m A) Stock No. Outline

2N4351

Contextual Info: SOLID STATE 3875081 01 DE I 3fl?SDfll D010T7? 01E G E S O LID STATE 10977 D T- 35'- 2 . r 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V

Contextual Info: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE s FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated G 2 3 D S 1 4 C Maximum Temperatures

Contextual Info: P-Channel Enhancement Mode MOSFET Amplifier/Switch LLC 2N4352 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted FEATURES • • • • Low ON Resistance Low Capacitance High Gain P-Channel Complement to 2N4341 Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Contextual Info: 2N4350 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)350m Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.200

2N4352

Abstract: 2N4341 DS005 X2N4352
Contextual Info: P-Channel Enhancement Mode MOSFET Amplifier/Switch LLC 2N4352 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted FEATURES • • • • Low ON Resistance Low Capacitance High Gain P-Channel Complement to 2N4341 Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

2N3638

Abstract: 2N3644 2N3645 2N3638A CIL297 2N4354 2N4355 2N4356 CIL295 CIL296
Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP M a x m u m P a t in g s 2N4356 V CBO V CEO V EBO (V) Min (V) Min (V) BO SO Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 5.0 45 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat)

2N4351

Abstract: mosfet 2n4351
Contextual Info: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures

2n4351

Abstract: mosfet 2n4351
Contextual Info: SOLID STATE 01 DE I 3fl?SDfll 01E 10977 T- 35*- 3875081 G E SOLID STATE D010T77 D 2. r * 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V

2N4351

Abstract: X2N4351
Contextual Info: _l _ _ N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CQ IO O IC CO RPO RATIO N m y j M mt m *• t 2N4351 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise noted FEATURES • • • • • Low ON Resistance Low Capacitance High Gain

Contextual Info: 2N4355 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2n3638

Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP Maxim um R atin gs 2N4356 2N364S V CBO VCEO V EBO (V) Min (V) Min (V) Min BO B0 5.0 60 2N4354 2N4355 2N3644 60 60 45 60 60 60 45 IcBO (MA) Max 0.05 V CB (V) Min 50 5.0 5.0 5.0 5.0 »FE Max 0.05 0.04 50 50 30 VCE(Sat)

2N4352

Abstract: mosfet equivalent
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | b3b?a5»t OOabbaT 1 | 2N4352 CASE 20-03, STYLE 2 TO-72 TO-206AF MAXIMUM RATINGS Symbol Value Unît Drain-Source Voltage Vd s 25 Vdc Draln-Gate Voltage Vd g 30 Vdc Gate-Source Voltage VGS ±30 Vdc Rating Drain Current •d 30

2N4351 MOTOROLA

Abstract: mosfet equivalent mosfet 2n4351 2N4351
Contextual Info: M O T O RO LA SC XSTRS/R F 1HE D | b3b?a51 GOflkbSS 4 | 2N4351 CASE 20-03, STYLE 2 TO-72 TO-206AF Drain MAXIMUM RATINGS Symbol Value Unît Drain-Source Voltage Vos 25 Vdc Draln-Gate Voltage Vd G 30 Vdc Gate-Source Voltage* Rating \ fj n Gate \ 4 J Cas«

2N4351

Abstract: mosfet 2n4351 X2N4351
Contextual Info: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted • Low ON Resistance • Low Capacitance Gain • High • High Gate Breakdown Voltage • Low Threshold Voltage

2N4355

Abstract: 2n4356 2N4354 MPS4355 MPS4354 2N4355+equivalent MPS4355 transistor MPS4356 T0-105 60-80V
Contextual Info: MPS4354 MPS4355 MPS4356 2N4351» 2N4355 2N4356 certtfifi Sem iconductor Corp. Central sem iconductor Corp. ♦I JEDEC T O - 1 0 5 JEDEC T0-92 EBC SILICON PNP TRANSISTORS 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N^35Z*, MPS4354 series types are Silicon PNP Small Signal T ra n s ­

2N4355

Abstract: KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 15 20 25 30 35 40 45 50 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 KT209L KT501L BC143 BC343 BC287 BCY29 BCY29 PN4354 2N4354 2N3072 2N3073 ESMS38 2SA546 2N4030 BFR80 SHA7538 2N1233

2N4351 equivalent

Abstract: 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42
Contextual Info: D IG ^ R M ^ ELEC T R O N IC • gps COR 42E D ■ Bfl42L,0? OODCJOEO 5 1 1 ■ DGE/ - J / ' - ì r 1 9 9 1 HIGHWAY 2 8 W E S T BOUND BROO K, N E W J E R S E Y 0 8 8 0 5 k r 2N4351 TO-72 i»w ifc*S <t y u ? MN t 1 « jauPirc 0«tl OftAIN lUISflAtC «NO CASEUAO

2N4351

Abstract: mosfet 2n4351 2N435
Contextual Info: 2N4351 25 V - N-Channel Enhancement Mode MOSFET General Purpos. 1 of 2 Home Part Number: 2N4351 Online Store 2N4351 Diodes 25 Transistors V - N- C hannel Enhanc em ent M o de M O SFET Purpo s e Am plifier/ s w it c h