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    2N5089 POWER Search Results

    2N5089 POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    2N5089 POWER Datasheets Context Search

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    2N5088 equivalent

    Abstract: 2N5088 2N5089
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage


    Original     		PDF 2N5088 2N5089 C-120 2N5088 equivalent 2N5088 2N5089

    2N5089

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage


    Original     		PDF 2N5088 2N5089 C-120 2N5089

    2N5088 Cross Reference

    Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


    Original     		PDF 2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2N5088 Cross Reference 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild

    2n5089 spice

    Abstract: 2N5088 Fairchild
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


    Original     		PDF 2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2n5089 spice 2N5088 Fairchild

    2N5087

    Abstract: transistor 2N5086 2N5087 equivalent 2N5086 2n5088 transistor 2N5088 2N5089
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


    Original     		PDF 2N5086 2N5087 2N5088 2N5089 2N5087 transistor 2N5086 2N5087 equivalent 2n5088 transistor

    2N5088 equivalent

    Abstract: ST transistor 2n5088 transistor 2N5086 2N5087 2N5088 2N5089 hfe 300
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		PDF 2N5088 2N5089 2N5086 2N5087 100Hz, 2N5088 equivalent ST transistor 2n5088 transistor 2N5087 2N5089 hfe 300

    2N5089 equivalent

    Abstract: 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088 2N5086 2N5088
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		PDF 2N5088 2N5089 2N5086 2N5087 100Hz, 2N5089 equivalent 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088

    2N5088 equivalent

    Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		PDF 2N5088 2N5089 2N5086 2N5087 2N5088 equivalent 2n5088 transistor 2N5089 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024

    2N5088

    Abstract: 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 2N5086 2N5087 st2n5088 2N5088 power
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		PDF 2N5088 2N5089 2N5086 2N5087 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 st2n5088 2N5088 power

    hFE-200 to-92 npn

    Abstract: 2N5087 2N5086 2n5088 transistor hFE-200 transistor PNP 2N5088 2N5089 hFE-200
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


    Original     		PDF 2N5086 2N5087 2N5088 2N5089 100Hz, hFE-200 to-92 npn 2N5087 2n5088 transistor hFE-200 transistor PNP 2N5089 hFE-200

    2N5087

    Abstract: transistor 2N5086 2N5086 2n5088 transistor 2N5088 equivalent 2N5088 2N5089 ST transistor Semtech Electronics
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


    Original     		PDF 2N5086 2N5087 2N5088 2N5089 2N5087 transistor 2N5086 2n5088 transistor 2N5088 equivalent ST transistor Semtech Electronics

    hFE-200 to-92 npn

    Abstract: 2N5087 hFE-200 transistor PNP 2N5086 2n5088 transistor ST transistor 2N5088 2N5089 hFE-150
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


    Original     		PDF 2N5086 2N5087 2N5088 2N5089 100Hz, hFE-200 to-92 npn 2N5087 hFE-200 transistor PNP 2n5088 transistor ST transistor 2N5089 hFE-150

    2N5089

    Abstract: 2N5088 2N5088 equivalent 2N5089 fairchild 2n5088 transistor MMBT5088 MMBT5089
    Text: 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07.


    Original     		PDF 2N5088 2N5089 MMBT5088 MMBT5089 OT-23 2N5088 2N5089 2N5088 equivalent 2N5089 fairchild 2n5088 transistor MMBT5088 MMBT5089

    2n 5088 transistor

    Abstract: SOT-23 CEB
    Text: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier


    Original     		PDF 2N5088/89 MMBT5088/89 MMBT5088 MMBT5089 OT-23 O-92/SOT-23, MIL-STD-202, MMBT5089 2n 5088 transistor SOT-23 CEB

    74C14

    Abstract: hp5082-2810 LT1004s LM334 LT1004 LTC1440 LTC1441 LTC1442 LTC1443 LTC1444
    Text: advertisement New Comparators Feature Micropower Operation Under All Conditions – Design Note 137 Jim Williams Some micropower comparators have operating modes that allow excessive current drain. In particular, poorly designed devices can conduct large transient currents


    Original     		PDF 1N4148 2N5089 2N2222 74C14 LTC1441 DN137 LTC1441-Based 1-800-4-LINEAR. hp5082-2810 LT1004s LM334 LT1004 LTC1440 LTC1441 LTC1442 LTC1443 LTC1444

    Untitled

    Abstract: No abstract text available
    Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. 1 EBC ABSOLUTE MAXIMUM RATINGS for


    OCR Scan     		PDF 2N5086 2N5088 2N5087 2N5089 T0-92A 2N5086, 2N5088;

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D • bbS3T31 QDEfilbE 37fl 2N 5086 2N 5 087 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5088/2N5089.


    OCR Scan     		PDF bbS3T31 2N5088/2N5089. 2N5086 2N5087 S3T31 002fllb4

    Untitled

    Abstract: No abstract text available
    Text: i i N ANER P H I L I P S / D I S C R E T E SSE D i {□ □53=131 DQ175DI3 7 I 2N5088 2N5089 T - ^ - 2 1 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.


    OCR Scan     		PDF DQ175DI3 2N5088 2N5089 2N5086/2N5087. T-29-21

    2N3563

    Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
    Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15


    OCR Scan     		PDF D0D0S15 2N5088 2N5127 O-106 2N5131 2N5133 2N5209 2N5210 2N3563 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133

    br1271

    Abstract: high gain low noise 2n BF112
    Text: • S fê M IC O N D U G T O P ï ■>« 2N5088 2N5089 MMBT5088 MMBT5089 SOT-23 B Mark: 1 Q /1 R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1|aA to 50 mA.


    OCR Scan     		PDF 2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 br1271 high gain low noise 2n BF112

    2N508B

    Abstract: 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR 2N5088 2N5089 MMBT5088 MMBT5089 T092 LS5911
    Text: 2N5088 / MMBT5088 12N50891 MMBT5089 & D iscrete P O W ER & S ig n a l Techno logies National S e m i c o n d u c t o r " MMBT5088 MMBT5089 2N5088 2N5089 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1pA to 50 mA.


    OCR Scan     		PDF 2N5088 2N5089 MMBT5088 MMBT5089 2N5089 b5D1130 2N508B 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR MMBT5089 T092 LS5911

    2n5088 transistor

    Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n5088 transistor SL 100 NPN Transistor

    MPSA18

    Abstract: PN2484 2N5210 national 2N5088 2N5089 2N5210 2N5961 2N5962
    Text: This I Material cr aIn Copyrighted a aa .rr ÜJ a xtn Cb » % /^ Device No. MPSA18 -a -v j •nJ By Its I National S e m Case Style TO-92 92 i c o n V CBO VCE0 ^EBO (V) Min (V) Min (V) Min 45 45 6.5 d u c t o 'cBO <"A) « Max 50 V m 30 400 500 500 500 ' '


    OCR Scan     		PDF MPSA18 2N5088 2N5210 2N5961 2N5962 PN2484 2N5210 national 2N5089

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514019 GROUP SPRAGUE. =13 D • Ô5 1 3 Ô S 0 D 0 0 3 5 Ö7 SEM ICO N D S/IC S 93D 5 ■ 03587 P . T " " PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain


    OCR Scan     		PDF 2N3904 2N3974 2N3976 TP4013 TP4014 2N4123 2N4124 2N4140 2N4141 2N4286