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    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903

    BU108

    Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BD438 BD442. BD437 BD441 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    transistor rc 3866

    Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It


    Original     		PDF MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJW16212 TIP73B TIP74 TIP74A transistor rc 3866 t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108

    mje13009 equivalent

    Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power


    Original     		PDF BUV48/BUV48A BUV48 BUV48A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje13009 equivalent buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202

    2N5302

    Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
    Text: ÆàMOS PEC NPN SILICON HIGH-POWER TRANSISTORS NPN General Purpose use in power amplifier and switching circuit applications. 2N5301 2N5302 2N5303 FEATURES: * DC Current Gain Specified- 1.0 to 30 A * Low Collector-Emitter Saturation Voltage v CE<sat = °-75 v M ax) @ lc = 10 A - 2N5301, 2N5302


    OCR Scan     		PDF 2N5301, 2N5302 2N5303, 2N4398 2N4399 2N5745 2N5301 2N5303 2N5745 N5303

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055

    2N5301

    Abstract: 2N5302 2N5303 RCA-2N5301
    Text: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 RCA-2N5301, 2N5302 2NB301, 2NS303. 2N5301 RCA-2N5301

    Untitled

    Abstract: No abstract text available
    Text: ÏÏÏ 3875081 G E SOLID D!T“| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ | ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan     		PDF 0G173fii( 2N5301, 2N5302, 2N5303 TQ-204AA RCA-2N5301, 2N5302 2N5303 2N53Q2, 2NS303.

    2N5301

    Abstract: 2N5302 2N5301-1
    Text: 2N5301 2N5302 200 WATT NPN SILICON POWER TRANSISTOR Solid State Devices Incorporated 1 4 830 V alley V iew Avenue La Mirada, California 9 0 6 3 8 Telephone 213 9 2 1 -9 6 6 0 TW X -910-5 83-480 7 Xooa.^.s" • H F E .1 5 -6 0 @ 15 Amps


    OCR Scan     		PDF 2N5301 2N5302 2N5302 2N5301-1

    fu 5303

    Abstract: 4410b
    Text: File Num ber 2N5301, 2N5302, 2N5303 1029 High-Current High-Power High-Speed N-P-N Power T ransistors TERMINAL DESIGNATIONS Feature«: • Specification tor h rE and VcE sat up to 30 A ■ Current gain-bandwidth pro d u ct h = 2 MHz min. at 1 A ■ Low saturation voltage with high beta


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 O-204AA 2N5302 2N5303 fu 5303 4410b

    Untitled

    Abstract: No abstract text available
    Text: File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ]> High-Current High-Power High-Speed N-P-N Power Transistors • 43D2271 GGHOiiS^ 387 H H A S _ TERMINAL DESIGNATIONS F e a tu m : ■ Specification to r /ife and VcE saf up to 30 A ■ Current gain-bandw idth product h = 2 MHz min. a t 1 A


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 43D2271 O-204AA 2N5302 2N5303

    2N5303

    Abstract: 2n5302 2N530I 2N5302 EB 2N5301
    Text: 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E PO W ER TRANSISTORS NPN SILICON 40-60-80 VOLTS 200 WATTS .FO R U SE IN P O W E R A M P L IF IE R AND SW ITCH IN G C IR C U IT S A PPLIC A TIO N S. H i g h C o l l e c t o r - E m i t t e r S u s t a in in g V o l t a g e ' C E O S U S


    OCR Scan     		PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5303 2N530I 2N5302 EB

    2n5302

    Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)


    OCR Scan     		PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp

    2N5301

    Abstract: 2N5303 2N4398 2N4399 2N5302 2N6303 TRANSISTOR 2n5302 2n5302 transistor
    Text: TE XA S IN S TR -COPTO} ta de jaTtiTat, □03f3s c]3 62C S 9 e i 7 2 6 TEXAS INSTR <OPTO 36593 D 2N5301,2N5302,2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 19 6 9 - REVISED OCTOBER 198 4 Designed for Complementary Use With 2N4398, 2N4399 200 W at 25°C Case Temperature


    OCR Scan     		PDF 9S1726 2N5301 2N5302 2N5303 2N4398, 2N4399 2N5301, 2N5302) 2N5303) 2N4398 2N4399 2N6303 TRANSISTOR 2n5302 2n5302 transistor

    2N5239

    Abstract: 2N5157 2N5202 2N5218 2N5237 2N5238 2N5240 2N5241 2N5250 2N5251
    Text: • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN hf: E V OLTAGE S NPN SAT . V O LT A GES M 3X. CASE V CE VCE V CB V EB •c (V) (A) M in. Max. (A) •b (A) V CE (V) V BE (V) 2N5157 TO-3 700 500 6 5 1 30 90 1 0.7 2.5 2 2N5202 TO-66 100 50


    OCR Scan     		PDF 2N5157 2N5202 2N5218 2N5237 2N5238 2N5239 2N5240 2N5241 2N5250 O-114 2N5251

    2N5302

    Abstract: No abstract text available
    Text: 7 15 * 15 37 OQg^S^ SGS-THOMSON [Mæ iCTiMO gS S 6 S - THOMSON 1 • 3 - ( £=> 2N5301/02/03 2N4398/99/5745 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in­


    OCR Scan     		PDF 2N5301/02/03 2N4398/99/5745 2N5301/2/3, 2N4398/99 2N5745 2N5301 2N5302 2N5745 2N5301/2/3-2N4398/99-2N5745 GQS1334

    2N5303

    Abstract: 2N5301 2N5302 2N4398 2N4399 2N5745 2N5301-3 n439
    Text: D Q 5 ' ì 3 S tl S C S -T H O M S O N [ « ^ E lE O i r i ® i a O i S 6 S- THOMSON 1 • 2 N 5 3 0 1 /0 2 /0 3 2 N 4 3 9 8 /9 9 /5 7 4 5 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in­


    OCR Scan     		PDF 2N5301/02/03 2N4398/99/5745 2N5301/2/3, 2N4398/99 2N5745 2N5301 2N5302 2N5303 2N4398 2N4399 2N5301-3 n439

    2N5330

    Abstract: 2N5584
    Text: A P I EL E CT R ONI CS INC Sb 00 ^3 59 2 A P I E L E C T R O N I C S INC dF J DÜMBSi a □□□□537 26C 00 2 3 7 1 D "P-J 3 - 0 \ C O L L E C T O R C U R R E N T = 3 0 A M P S NPN T Y P E S v C E O s u s Volts v EBO Volts Devic e No Case V CB O V olts


    OCR Scan     		PDF

    2N5330

    Abstract: No abstract text available
    Text: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100


    OCR Scan     		PDF 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771 2N5330

    2N5885 MOTOROLA

    Abstract: 2N5629 MOTOROLA MJ802 MOTOROLA 2N6331 2N5886 MOTOROLA 2N5629 2n4399 2n5302 MOTOROLA MJ3771 2N3772 motorola
    Text: MOTOROLA SC -CDI0DES/0PT03- ,6 3 6 7 2 5 5 Im MOTOROLA SC ]>F§ b3t,72S5 □Q37T3Ô 3 | D IO D E S /O P T O 34C 37938 2C5886 DIE NO. — NPN LINE SOURCE — PL500.4 K jB | NPN 2C5884 / / DIE NO. — PNP LINE SOURCE — PL500.3 PNP This die provides performance equal to or better than that


    OCR Scan     		PDF -CDI0DES/0PT03- Q37T3Ô PL500 2C5886 2C5884 2N3771 2N3772 2N5301 2N5302 2N5885 MOTOROLA 2N5629 MOTOROLA MJ802 MOTOROLA 2N6331 2N5886 MOTOROLA 2N5629 2n4399 MOTOROLA MJ3771 2N3772 motorola

    2N4399

    Abstract: 2N4398 MOTOROLA 2N6745 2n4399 motorola 2N4398 2N4399 equivalent Motorola Bipolar Power Transistor Data 2n4399 2N5745 2N4398 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M M T 4»W 2N 3442 PNP S ilico n H ig h -P o w e r TVansistors 2N 4398 2N 4399 2N 5745 . . . designed for use in power amplifier and switching circuits. • • • Low Coilector-Emitter Saturation Voltage — IC = 15 Ade, VcE sat) = 1-0 Vdc (Max) 2N4398.99


    OCR Scan     		PDF 2N4398 2N5745 2N5301, 2N5302, 2N5303 2N4399 2N4398 MOTOROLA 2N6745 2n4399 motorola 2N4399 equivalent Motorola Bipolar Power Transistor Data 2n4399 2N4398 equivalent

    2IM5301

    Abstract: CE 5302
    Text: TE X A S IN S T R -COPTO} ta de jaihiTat, o o a b s ^ a o 62C S 9 e i 7 2 6 TEXAS INSTR <OPTO 36593 D 2N5301,2N5302,2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 1 9 6 9 - REVISED OCTOBER 1 9 8 4 Designed for Complementary Use W ith 2N4398, 2N4399 200 W a t 25°C Case Temperature


    OCR Scan     		PDF 2N5301 2N5302 2N5303 2N4398, 2N4399 2IM5301, 2N5302) 2N5303) T-33-/S2N5301 2IM5301 CE 5302