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    2N533 Price and Stock

    Microchip Technology Inc 2N5338

    POWER BJT
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    Central Semiconductor Corp 2N5339

    TRANS NPN 100V 5A TO39
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    Microchip Technology Inc 2N5339

    NPN TRANSISTOR
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    NAC 2N5339 10
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    Microchip Technology Inc 2N5339P

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    Microchip Technology Inc 2N5339T3

    POWER BJT
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    2N533 Datasheets (314)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N533 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N533 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N533 Unknown GE Transistor Specifications Scan PDF
    2N533 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N533 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N533 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5330 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N5330 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5330 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5330 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5330 Unknown Transistor Replacements Scan PDF
    2N5330 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5330 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5330 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5330 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5330 OPTEK Technology POWER SWITCHING TRANSISTORS Scan PDF
    2N5330 OPTEK Technology Power Switching Transistors Scan PDF
    2N5330 PPC Products Transistor Short Form Data Scan PDF
    2N5330 PPC Products Transistor Selection Guide Scan PDF
    2N5330 PPC Products Transistor Selection Guide including JAN / JANTX / JANTXV Scan PDF
    ...

    2N533 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5333

    Abstract: No abstract text available
    Text: 2N5333 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5333 O205AD) 1-Aug-02 2N5333

    2N5337

    Abstract: No abstract text available
    Text: 2N5337 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5337 O205AD) 1-Aug-02 2N5337

    2N5336X

    Abstract: No abstract text available
    Text: 2N5336X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF 2N5336X O205AD) 1-Aug-02 2N5336X

    NPN 200 VOLTS POWER TRANSISTOR

    Abstract: 2N5339 JAN 2N5339
    Text: 2N5339 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5339J


    Original     		PDF 2N5339 MIL-PRF-19500 2N5339J) 2N5339JX) 2N5339JV) MIL-STD-750 MIL-PRF-19500/560 NPN 200 VOLTS POWER TRANSISTOR 2N5339 JAN 2N5339

    Untitled

    Abstract: No abstract text available
    Text: tStml-dontLuckot ZPioJuati, Una. TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 3784980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS JEDECTO-61 FEATURES ALL TERMINALS ISOLATED FROM CASE RADIATION TOLERANT


    Original     		PDF 2N5330 JEDECTO-61 SPT5330

    Untitled

    Abstract: No abstract text available
    Text: t-Sztnl-Conduatoi LProdacii, fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN POWER SILICON SWITCHING TRANSISTOR 2N5339 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		PDF 2N5339 300ns,

    Untitled

    Abstract: No abstract text available
    Text: 2N5336 2N5337 2N5338 2N5339 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high


    Original     		PDF 2N5336 2N5337 2N5338 2N5339 2N5336

    Untitled

    Abstract: No abstract text available
    Text: 2N5336 6 Watt NPN silicon power. 13.36 Transistors Bipolar Silicon N. 1 of 1 Home Part Number: 2N5336 Online Store 2N5336 Diodes 6 Wat t NPN s ilic o n po w er. Transistors Enter code INTER3 at checkout.*


    Original     		PDF 2N5336 com/2n5336 2N5336

    Untitled

    Abstract: No abstract text available
    Text: 2N5336X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF 2N5336X O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5335 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5335 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5333 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5333 O205AD) 17-Jul-02

    2N5339JAN

    Abstract: Bipolar Transistors
    Text: Back to Bipolar Power Transistors TECHNICAL DATA MIL-PRF 2N5339 JANTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/560 NPN POWER SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current


    Original     		PDF 2N5339 MIL-PRF-19500/560 2N5339JAN Bipolar Transistors

    2N5339

    Abstract: No abstract text available
    Text: 2N5339 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case It is intended for high switching applications up to 5A. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5339 2N5339

    2N5338X

    Abstract: 2N5339X 2674
    Text: 2N5338X 2N5339X SEME LAB NPN SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. The 2N5338X & 2N5339X silicon expitaxial planar NPN transistor in jedec


    Original     		PDF 2N5338X 2N5339X 2N5339X 2N5338X 2674

    2N5337X

    Abstract: No abstract text available
    Text: 2N5337X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF 2N5337X O205AD) 1-Aug-02 2N5337X

    2N5334

    Abstract: No abstract text available
    Text: 2N5334 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5334 O205AD) 1-Aug-02 2N5334

    2N5338

    Abstract: No abstract text available
    Text: 2N5338 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF 2N5338 O205AD) 1-Aug-02 2N5338

    Untitled

    Abstract: No abstract text available
    Text: 2N5337A-220M MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE 4.6 1 0.6 3.6 Dia. FEATURES 1 0 .6 1 3 .5 16.5 0.8 • HERMETIC METAL PACKAGES 1 23 • HIGH RELIABILITY 1 3 .7 0 • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS


    Original     		PDF 2N5337A-220M

    Untitled

    Abstract: No abstract text available
    Text: 2N5335 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5335 O205AD) 17-Jul-02

    2N5332

    Abstract: No abstract text available
    Text: TYPE 2N5332 P-N-P SILICON TRANSISTOR BU LL E T IN NO. DL-S 6810830, SEP T EM BE R 1968 RADIATION-TOLERANT TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE VHF-UHF AMPLIFIER APPLICATIONS • Guaranteed lCBo , hFE, and after 1x1 O'5 Fast Neutrons/cm2 V CE<ut • Complément to N-P-N type 2N5399


    OCR Scan     		PDF 2N5332 2N5399

    2N5339

    Abstract: 2N5336 2N533 2n5337 jantx 2n5339 jantx 2N5337 2N5338 2N6190 2N6336 2n53
    Text: & / V E 2N5336 2N5337 2N5338 2N5339* S *also a v a ila b le as JAN, JANTX, JANTXV 5 AMPERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS PNP SILICON . . . designed for switching and wide band amplifier applications. • Low Collector-Em itter Saturation Voltage —


    OCR Scan     		PDF 2N5336 2N5337 2N5338 2N5339* 2N6190 2N6193 2N533Â 2N5339 2N533 2n5337 jantx 2n5339 jantx 2N6336 2n53

    Untitled

    Abstract: No abstract text available
    Text: 7^ 2 ^ 5 3 ? 002=1335 7 • £ jl 1 ^ 3 2 -O S 2N5336/5337 2N5338/5339 SCS-THOMSON i&JCTHMOtgS S G S-TH0MS0N 3ÜE » HIGH CURRENT FAST SWITCHING APPLICATION DESCRIPTION The 2N5336, 2N5337, 2N5338 and 2N5339 are silicon epitaxial planar NPN transistors in Jedec


    OCR Scan     		PDF 2N5336/5337 2N5338/5339 2N5336, 2N5337, 2N5338 2N5339 2N5336/37/38/3 25/uF 10/LIS

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 SGS-THOMSON Ä T# R [L IS T O « 2 N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.


    OCR Scan     		PDF N5339 2N5339 2N5339 P008B

    2N5330

    Abstract: SPT5330
    Text: SOLI» STATE DEVICES INC 12E D fl 3 L>b011 □ □ 0 E D ci3 4 | T'33-I 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE g g P II 14830 Valley View Avenue La Mirada, California 90638 (¿lo 9¿1-ybbU


    OCR Scan     		PDF 2N5330 SPT5330