2N5401 L Search Results

2N5401

Abstract: transistor 2N5401 1N914 2N5400
Contextual Info: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO

transistor 2N5401

Abstract: 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA

2N5401

Abstract: 2N5400 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage

C2N5401

Abstract: 2N5401
Contextual Info: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO

Contextual Info: 2N5401 PNP Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current 2N5401 -150 -160 -5.0 600 Symbol VCEO

2N5401 fairchild

Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*

2N5401 fairchild

Abstract: transistor 2N5401 2N5401 2n5401 transistor
Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

2N5457

Contextual Info: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage

2N5401

Abstract: 1N914 2N5400
Contextual Info: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage

transistor 5401

Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

LSC 132

Abstract: 2N5401 MMBT5401 357t
Contextual Info: 2N5401 I MMBT5401 <S> D is c r e te P O W E R & S i g n a l T e c h n o lo g ie s _ National Semiconductor"' 2N5401 MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

transistor 2N5401

Abstract: 2N5401
Contextual Info: 2N5401 PNP Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current 2N5401 -150 -160 -5.0 600 Symbol VCEO VCBO VEBO IC Total Device Dissipation TA=25 C

2n5401y

Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

diode 2N5401

Abstract: 2N5401 2n5401 148
Contextual Info: DC COMPONENTS CO., LTD. 2N5401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number

transistor 2N5401

Abstract: 2N5401 2N5551
Contextual Info: 2N5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with 2N5551

2N5401

Contextual Info: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V

C2N5401

Abstract: 2N5401 transistor 2N5401 of pnp transistor 2n5401
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L „ ORDERING INFORMATION Order Number

2n5401TRANSISTOR

Abstract: 2n5401 toshiba 2n5401 transistor
Contextual Info: TOSHIBA 2N5401 Transistor Unit in mm | 5.1 MAX. Silicon PNP Epitaxial Type | For General Purpose Switching and Amplifier Applications 0.4 S Features 0.55MAX. 0.4 5 • High Collector Breakdown Voltage ' Vcbo = “ 160V, VCE0 = -150V • Low Leakage Current

2N5551

Abstract: Transistor KST-9041-000 transistor equivalent CT 2n5551 2N5401 2n5401 application
Contextual Info: 2N5551 Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with 2N5401

Contextual Info: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ・High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ・Low Leakage Current. G : ICBO=-50nA Max. @VCB=-120V

2N5401L-x-T92-B

Abstract: 2N5401L Transistor TO-92 2N5401 of pnp transistor 2n5401
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N5401L-x-AB3-R

Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE

2N5401L

Abstract: of pnp transistor 2n5401
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 1 * Collector-emitter voltage: VCEO = -150V *Total Power Dissipation: PD MAX =1W * High current gain SOT-89 *Pb-free plating product number:2N5401L