2N5401S Search Results

2N5401S

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V cbo=-160V, V CEo=-150V •3 MAXIMUM RATINGS Ta=25°C RATING UNIT Collector-Base Voltage

2N5401S

Contextual Info: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-160V, VCEO=-150V H ᴌLow Leakage Current. 3 G A 2 D ᴌHigh Collector Breakdwon Voltage 1 : ICBO=-50nA Max. @VCB=-120V

Contextual Info: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES 1999. 12. 22 Revision No : 2 1/2

2N5401S

Contextual Info: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 H A 3 G : VCBO=-160V, VCEO=-150V ・Low Leakage Current. 1 : ICBO=-50nA Max. @VCB=-120V

2N5401S SOT-23

Abstract: 2N5401S
Contextual Info: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-160V, VCEO=-150V D High Collector Breakdwon Voltage 3 G A 2 H Low Leakage Current. 1 : ICBO=-50nA Max. @VCB=-120V

2N5401S SOT-23

Abstract: zE sot23 SOT-23 Mark ZE MARKING ZE SOT-23 2N5401S
Contextual Info: SEMICONDUCTOR 2N5401S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZE 1 2 Item Marking Description Device Mark ZE 2N5401S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

2N5401S

Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM A B C D E G H J K L M N P • High Collector Breakdwon Voltage : V Cbo=-160V, V Ceo=-150V

2N5401UB06

Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2N5401HR

Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION