2N5416 PACKAGE Search Results

2N5416

Abstract: 15MHZ TO39 10W
Contextual Info: Search Results Part number search for devices beginning "2N5416" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5416 PNP TO39 300V 1A 30 150 10/50m 15MHz

2N5415

Abstract: 2N5416U4
Contextual Info: 2N5415 – 2N5416 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-39 and low

2N5416

Abstract: 2N5415 2N5416 PACKAGE 2N5416S transistor 2N5415 2N5415S
Contextual Info: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N5415

Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o 2N5338 CECC 2N5338X 2N5339 2N5339 CECC 2N5339X 2N5344 2N5344A 2N5345 2N5345A 2N5357 2N5385 2N5404 2N5405 2N5406 2N5407 2N5408 2N5409 2N5410 2N5411 2N5411A 2N5414 2N5415 2N5415 CECC 2N5415CSM4 2N5416

2N5416

Abstract: 9016 pnp transistor
Contextual Info: 2N5416 PNP High Voltage Transistors Features: • PNP Silicon High Voltage Transistor. • High speed switching and linear amplifier appliances in Military, Industrial and Commercial Equipment. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39

JANS2N5416

Abstract: JANTX2N3868 2N3202 2N3203
Contextual Info: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S JANTX2N5415 JANTXV2N5415 2N5416 JAN2N5416

2N5416 RCA

Abstract: 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA
Contextual Info: E SOLID STATE qi DE 1 3 fl7SDfll QQ171ba ‘i W^T- 3 1 ~ 1 High-Voltage Power Transistors- 5 !-• _ 2N5415, 2N5416 File Number Silicon P-N-P High-Voltage Planar Transistors

Contextual Info: 2N5416 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

2N5416

Abstract: 2N5415
Contextual Info: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N5416

Contextual Info: 2N5416 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

Contextual Info: 2N5416 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

2N1132A

Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743

2N4033

Abstract: 2N3494 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637

2N5416

Abstract: 2N5415 2N5416 PACKAGE BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 Philips Semiconductors Product specification PNP high-voltage transistors

2N5416

Abstract: 2n5415
Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING • Low current max. 200 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Switching and linear amplification in military, industrial

10 35 DIODE

Abstract: BFT19B diode 15 35
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 2N5282 STIP30 STIP305 TRSP3743 2N5345 MJE5730 MJE5730 MJE5730 g~~~~ 25 30 BST16 MJ5416 MJ5416 MM5416 MM5416 MM5416 ST5416 2N5416 +RSP5~~6 35 40 TRSP3006 TRSP30X TRSP30X TRSP30X5 TRSP30X5 TRLP3504 TRLP3504

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

2N5416 RCA

Abstract: RCA-2N5415 2n5415 2N3439 RCA 2N5415 RCA
Contextual Info: E SOLID STATE High-Voltage Power Transistors. ôï Ì I~T-37-a DEf|3fl7S0âl OQlVlbfl 2N5415, 2N5416 File Number Silicon P-N-P High-Voltage Planar Transistors 336 terminaldesignations For H ig h -S p ee d Sw itching and Lin ear-A m plifier A p plications in M ilitary, Industrial and

2N5416 harris

Abstract: 2N5416 2N5416 RCA 2N5415
Contextual Info: T-33-1-7 Power Transistors, 2N5415, 2N5416 HARRIS SEMICOND SECTOR File Number 27E D Silicon P-N-P High-Voltage Planar Transistors • 336 M3Q2271 GDnfl7G T « H A S TERMINAL DESIGNATIONS F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s in M ilita ry , In d u s tria l and

TRANSISTOR 023

Abstract: 2N5416 2N5415 2N5415CSM4 2N5416CSM4
Contextual Info: 2N5415CSM4 2N5416CSM4 PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • Silicon Planar PNP Transistor

2N5415

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 • Silicon Planar PNP Transistor • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO

2N5415

Contextual Info: 2N5415CSM4 2N5416CSM4 PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • Silicon Planar PNP Transistor

2N5415

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 • Silicon Planar PNP Transistor • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO

transistor U4

Abstract: 2N5415 2N5416U4
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 10 September 2013. MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER