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    2N543 Search Results

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    2N543 Price and Stock

    Central Semiconductor Corp 2N5430

    TRANS NPN 100V 7A TO-66
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    Microchip Technology Inc 2N5430

    NPN TRANSISTOR
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    Mouser Electronics 2N5430 63
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    Onlinecomponents.com 2N5430
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    NAC 2N5430 Tray 7
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    Vishay Siliconix 2N5433

    JFET N-CH 25V TO206AC
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    Quest Components 2N5433 8
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    Central Semiconductor Corp 2N5431

    THROUGH-HOLE UJT
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    Vishay Siliconix 2N5432-2

    JFET N-CH 25V TO206AC
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    2N543 Datasheets (213)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    2N543
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 393.54KB 5
    2N543
    General Diode Transistor Selection Guide Scan PDF 608.68KB 10
    2N543
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 75.06KB 1
    2N543
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 95.71KB 1
    2N543
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 92.1KB 1
    2N543
    Unknown Vintage Transistor Datasheets Scan PDF 50.58KB 1
    2N543
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 81.92KB 1
    2N543
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 45.73KB 1
    2N543
    Unknown GE Transistor Specifications Scan PDF 22.15KB 1
    2N543
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 169.53KB 1
    2N543
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.87KB 1
    2N5430
    Central Semiconductor Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40 Original PDF 50.39KB 1
    2N5430
    Semelab Medium Power NPN Silicon Transistor - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40 Original PDF 15.67KB 2
    2N5430
    API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF 226.44KB 2
    2N5430
    API Electronics Short form transistor data Short Form PDF 80.96KB 1
    2N5430
    API Electronics Short form transistor data Short Form PDF 238.23KB 2
    2N5430
    Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF 41.93KB 1
    2N5430
    Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF 85.47KB 1
    2N5430
    Diode Transistor Transistor Short Form Data - TO-3 Scan PDF 86.13KB 1
    2N5430
    General Transistor NPN Power Transistors Scan PDF 188KB 2
    ...

    2N543 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Current Regulator Diodes

    Abstract: NIP1CHP
    Contextual Info: M ID fT-Siliconix J .Æ * * 1• in c o rp o ra te d N-Channel JFET Current Regulator Diodes_ TYPE PACKAGE DEVICE Single TO-92 TO-226AA • Single SOT-23 SST108, SST109, SST110 Single TO-52 (TO-206AC)2N5432, 2N5433, 2N5434 Single Chip


    OCR Scan
    O-226AA) OT-23 O-206AC) SST108, SST109, SST110 2N5432, 2N5433, 2N5434 Current Regulator Diodes NIP1CHP PDF

    2N5432

    Abstract: 2N5433 2N5434
    Contextual Info: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 FEATURES BENEFITS APPLICATIONS


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    2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 S-04028--Rev. 04-Jun-01 2N5433 2N5434 PDF

    2N5434

    Abstract: 2N5432 2N5433 teledyne crystalonics
    Contextual Info: ULTRA LOW Ro n SWITCHING 2N5432 2N5433 2N5434 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 445, PG. 58 • L O W R d s - 5 Ohms • LOWC q d — 15pfd ELECTRICAL DATA abso lute m a x im u m PARAM ETER r a t in g s SYM BOL U N IT S


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    2N5432 2N5433 2N5434 2n5432 2n5433 2N5434 teledyne crystalonics PDF

    2N5430X

    Contextual Info: 2N5430X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    2N5430X O213AA) 1-Aug-02 2N5430X PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan
    2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224 PDF

    2N5434

    Abstract: S 5018 2N5432 2N5433 X2N5432 X2N5433 X2N5434
    Contextual Info: CALOGIC CORP 4flE D • 000032b <3 ■ CGC N-Channel JFET Switch CORPORATION vJ T -3 S -Z S ’ 2N5432- 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • LOW fd*<on) • Excellent Switching • Low Cutoff Current Gate-Source Voltage. -25V


    OCR Scan
    4432E 000032b 2N5432-2N5434 100mA 400mA 10sec) 300ns, 4432S 00D0357 2N5434 S 5018 2N5432 2N5433 X2N5432 X2N5433 X2N5434 PDF

    2N5432

    Abstract: 2N5434 5433 2N5433
    Contextual Info: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 Features Benefits Applications D D D D D D D D


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    2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 Descri10 S-52424--Rev. 2N5434 5433 2N5433 PDF

    2N5629

    Contextual Info: Search Results Part number search for devices beginning "2N5430" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5430 NPN TO66 100V 7A 60 240 2/2 30MHz


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    2N5430" 2N5430 2N5430X 30MHz 2N5581" 2N5581 2N5581-JQR-B 250MHz 2N5629 PDF

    Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 JFET Sw it ch e s P/ N 2N5114 2N5115 2N5116 2N5434 J108 J109 J110 J111 J112 J113 J174 J175 J176 J177 PN4391 PN4392 PN4393 SST111 SST112 SST113 SST108 SST109 SST110 SST174


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    2N5114 2N5115 2N5116 2N5434 PN4391 PN4392 PN4393 SST111 SST112 SST113 PDF

    Contextual Info: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk


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    2N5432 2N5433 2N5434 2N3686 2N3822 2N4118A 2N4416A 2N3684 2N5197 2N6485 PDF

    Contextual Info: 2N5430X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    2N5430X O213AA) 30-Jul-02 PDF

    Contextual Info: 2N5435 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)60 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2N5435 time12u PDF

    2N3492

    Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
    Contextual Info: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0


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    2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N3492 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879 PDF

    145S2

    Abstract: 2N5432 2N5433 2N5434 616tf
    Contextual Info: designed fo r a . S ilic o n ix Performance Curves NIP See Section 5 B EN EF IT S 'D off < 200 PA • Highspeed *d(on) < 4 ns • Low Noise Audio-Frequency Ampli­ fication en < 2 nVA/Hz at 1 kHz Typical •A B SO LU T E MAXIMUM RATIN GS (25°C) 2N5434


    OCR Scan
    100mA -65to 2N54n-Source -10mA 145S2 2N5432I nI2N5433) 2NB434) 145S2 2N5432 2N5433 2N5434 616tf PDF

    motorola eb20

    Abstract: silicon unijunction transistor 2n5431
    Contextual Info: motorola sc diodes/opto I sse d • t.3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW DESIGNS 1 ^3 7 ^1 2N5431 P N U nijunction T ran sisto r Silicon Annular Unijunction Transistor . i characterized prim arily for lo w interbase-voltage operation in se n sin g, pulse


    OCR Scan
    2N5431 Vf32B1CHARAC T-37-JI motorola eb20 silicon unijunction transistor 2n5431 PDF

    Siliconix N-Channel JFETs

    Abstract: 2N5432 2N5433 2N5434
    Contextual Info: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 Features Benefits Applications D D D D D D D D


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    2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 Descri10 P-37407--Rev. Siliconix N-Channel JFETs 2N5433 2N5434 PDF

    Unit junction transistor UJT

    Abstract: ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc
    Contextual Info: motorola sc I diodes/opto sse d • ti3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW D ESIG N S 1^37^1 2N5431 P N U n ijunction T ra n sisto r Silico n A nnular Unijunction Transistor . i characterized primarily for low interbase-voltage operation in sensing, pulse


    OCR Scan
    b3b72SS 2N5431 2A-01 b3b72SS 10flA Unit junction transistor UJT ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc PDF

    Contextual Info: 2N5436 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)110 I(C) Max. (A)60 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2N5436 time12u PDF

    Contextual Info: 2N543 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)25m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)5.0m


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    2N543 Freq10M PDF

    2n5434

    Abstract: 2n5432
    Contextual Info: N-Channel JFET Switch CORPORATION 2N54322N5434 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted • Low rds(on) • Excellent Switching • Low Cutoff Current Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V


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    2N5432 2N5434 100mA 400mA -65oC 200oC -55oC 150oC 10sec) 300oC 2n5434 2n5432 PDF

    Contextual Info: 2N5434 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A)400m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)200p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    2N5434 PDF

    2N5430

    Abstract: IC 386
    Contextual Info: SEME 2N5430 LAB MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570)


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    2N5430 2N5430CECC 200mA 2N5430 IC 386 PDF

    2N5436

    Abstract: 2N5485 2N5485 MICRO ELECTRONICS 2N5434 2N5484 2N5486 2N5484 MICRO ELECTRONICS
    Contextual Info: 2N5484 2N5485 2N5486 2N5434, 2N5485 and 2N5486 are N-Channel Junction Pfasttc T O -9 2 Field Effect designed Transistors. for oscillators VHF / UHF and They are amplifiers, analog mainly mixers, switches. Bottom View Source & O ta in interchengeebie ABSOLUTE MAXIMUM RATINGS


    OCR Scan
    2N5484 2N5485 2N5486 2N5434, 2N5436 360mW 2N5484 2N5485 2N5486 2N5485 MICRO ELECTRONICS 2N5434 2N5484 MICRO ELECTRONICS PDF

    2N5432

    Abstract: 2N5433 2N5434
    Contextual Info: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 FEATURES BENEFITS APPLICATIONS


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    2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 08-Apr-05 2N5433 2N5434 PDF