2N5551 CHIP Search Results

2N5551 circuit

Abstract: in4148 3mh inductor dc to ac converter 2n5551 EL driver EL driving IN4148 operating frequency M5003 2n5551 chip
Contextual Info: 一華半導體股份有限公司 EL CONTROLE MOSDESIGN SEMICONDUCTOR CORP. M5003 EL LAMP DRIVER IC GENERAL DESCRIPTION 功能叙述 The M5003 is CMOS chip design for Electro-luminescence Lamp EL to light has independent circuit to control switching and

Contextual Info: 一華半導體股份有限公司 EL CONTROLE MOSDESIGN SEMICONDUCTOR CORP. M5430A/-1 EL LAMP DRIVER IC GENERAL DESCRIPTION 功能敘述 The M5430A is CMOS chip design for Electro-luminescence Lamp EL to light, The operating voltage is DC 3V, single choke be used, and 1 diode, 1 resistor and 2 transistor are necessary.

Contextual Info: 一華半導體股份有限公司 EL CONTROLE MOSDESIGN SEMICONDUCTOR CORP. M5430A/-1 EL LAMP DRIVER IC GENERAL DESCRIPTION 功能叙述 The M5430A is CMOS chip design for Electro-luminescence Lamp EL to light, The operating voltage is DC 3V, single choke be used, and 1 diode, 1 resistor and 2 transistor are necessary.

IN4007

Abstract: IN4007 DC 8A252 transistor in4007 2n5551 128
Contextual Info: PT8A2524-26/34-36/44-46 | |

IN4007

Abstract: transistor IN4007 IN4007 DC IN4007 F 5V to 240V relay ic IN4007 voltage regulator PT8A2544 2n5551 128 240v relay ic timer relay
Contextual Info: Data Sheet PT8A2524-6/34-6/44-6 Universal Timer Controller |

in4007

Contextual Info: PT8A2524-6/34-6/44-6 | |

PT8A 3515

Abstract: PT8A351x 1N4148 temperature sensor PT8A circuit diagram for buzzer circuits
Contextual Info: PT8A3514/15/16/17/18/19 C/D | | |

IN4007

Abstract: transistor IN4007 in4007 pin configuration IN4007 voltage regulator ic in4007 2n5551 128 IN4007 DC IN4007 application IN4007 maximum input voltage in4007 ic
Contextual Info: PT8A2524-6/34-6/44-6 | |

Contextual Info: PT8A3514/15/16/17/18/19 A/B | |

Contextual Info: PT8A3514/15/16/17/18/19 C/D | | |

relay 5v RAS-0510

Abstract: PT8A351x PT8A35 PT8A 3515 PT8A 3515A Iron Circuit Diagram 5 pin 5v relay pin out diagram 1N4148 temperature sensor 3514B PT8A
Contextual Info: PT8A3514/15/16/17/18/19 A/B | |

PT8A 3515A

Abstract: 5V to 240V relay ic PT8A 3515 1N4007 RELAY IC
Contextual Info: Data Sheet PT8A3514/15/16/17/18/19 A/B Smart Iron Controller |

5V to 240V relay ic

Abstract: 1N4007 RELAY IC PT8A 3518C Iron Circuit Diagram 24vdc debounce IC 3516c PT8A 3515 PT8A3 3515C
Contextual Info: Data Sheet PT8A3514/15/16/17/18/19 C/D Smart Iron Controller |

PT8A3515

Abstract: 24vdc debounce IC PT8A3515E PT8A Iron Circuit Diagram ic timer relay 5V to 240V relay ic electric iron POWER INDICATE AUTO OFF TIMER CIRCUIT PT8A3516E
Contextual Info: Data Sheet PT8A3514/15/16/17/18/19 E/F Smart Iron Controller |

2N5551

Abstract: CMPT5551 CP316V CXT5551 CZT5551
Contextual Info: PROCESS CP316V Small Signal Transistors NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization

CZT5551

Abstract: 2N5551 CMPT5551 CP316V CXT5551 2n5551 chip
Contextual Info: PROCESS CP316V Small Signal Transistors NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization

2N5551

Abstract: CMPT5551 CP316 CXT5551 CZT5551 2n5551 chip chip die npn transistor
Contextual Info: PROCESS CP316 Central Small Signal Transistor TM Semiconductor Corp. NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS

Contextual Info: UNITED MICROELECTRONICS TE DE J T3S5fllE □□□D33B 0 "u n i t e d Ta microelectronics de| massaia 000033^ 1 | ~ 9325812 UNITED MICROELECTRONICS 92D 00339 D 7".7S'-07-0? T40993 Absolute Maximum Ratings* •Comments Supply Voltage . . - 0 . 3 V to +6.2V

transistor equivalent CT 2n5551

Abstract: CP316V-2N5551-CT 2N5832 CMLT5551 CMLT5554 CMPT5551 CMPT5551E CMUT5551 CP316V 2n5551
Contextual Info: PCN #: 118 Notification Date: 19 October 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Chip process CP316V, NPN high voltage transistors, wafers, and die in chip form. Extent of Change:

2N5551 circuit

Abstract: transistor equivalent 2n5551 1N4148 2N5551 DC to AC converter TA 490 el display
Contextual Info: EL LAMP DRIVER BT6802 FEATURES FUNCTIONS • Single 3V battery operation • Economical solution for EL display • DC to AC conversion • CMOS process and low power consumption • Built-in RC oscillator • No external component needed for delay function

2N5551UB

Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■

Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■

BT6803

Abstract: 1N4148 2N5551 EL driving 1.5v watch chip TA 490 el display
Contextual Info: EL LAMP DRIVER BT6803 FEATURES FUNCTIONS • Single 1.5V battery operation • DC to AC conversion • Built-in RC oscillator • Built-in delay function • Three independent trigger inputs: ALM active Low makes EL display for 3.5 seconds delay; TG (active High) makes EL display for 3.5 seconds delay;

2n5551 smd

Abstract: 2N5551HR
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■