2N577 Search Results

2N5770

Contextual Info: t U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5770 TO-92 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to X mA range.

2N5771

Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

2N577

Abstract: 2N5771 PN4258 CBVK741B019 F63TNR MMBT5771 PN2222N Transistor 2N5771
Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

MC 140 transistor

Abstract: 2N5771
Contextual Info: 2N5771 I MMBT5771 Discrete POWER & Signal Technologies National Se m iconducto r" MMBT5771 2N5771 PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e ry high s p e e d satu ra te sw itching at c o lle c to r cu rre n ts to 1 0 0 m A . S o u rc e d fro m P ro c e s s 6 5 . S e e

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package E BC VHF/UHF Amplifier Mixer and Oscillator Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: LJ na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2N5771 PN5910 U.S.A. JEDEC TO-92 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5910 JEDEC TO-106 PNP SILICON SWITCHING TRANSISTORS MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Base Voltage

2N5777

Abstract: CM2150
Contextual Info: m 2N5777 MOD. \ \ SILICON NPN PHOTO DETECTOR DESCRIPTION: The 2N5777(MOD.) is Designed for General Purpose Industrial Photo Detector Applications. PACKAGE STYLE TO-92(V1) DM A B C D F G H J K N Q R FEATURES: • High Sensitivity • Economical TO-92 compatible

D43C8

Contextual Info: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5

Contextual Info: 1989963 CENTRAL SEMICONDUCTOR CENTRAL SEMICONDUCTOR c e n tr iti S@iîîi6@fi€§ü6f0r corgs. eenfru! Sifnieonduetor Corp. Central semiconductor Corp. centrai Semiconductor Corp. 92D 00354 D D E l n m ^ dddd 3 S 4 3‘ T 2N5771 PN5910 2N5910 JEDEC T0-92

Contextual Info: S E M IC O N D U C T O R 2N5770 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RatinQS

2N5770

Abstract: NPN RF Amplifier PN918
Contextual Info: R A IR C iiit S S E M IC O N D U C T O R 2N5770 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.

2N5771

Abstract: MMBT5771 PN4258
Contextual Info: ssæ i v i ra o „ „ r:^ o « 2N5771 MMBT5771 S O T -2 3 B M a rk : 3 R PNP Switching Transistor T h is d e v ic e is d e s ig n e d for v e ry high s p e e d s a tu ra te s w itc h in g at c o lle c to r c u rre n ts to 1 0 0 m A . S o u rc e d from P ro c e s s 6 5 . S e e

2N5771

Abstract: MMBT5771 PN4258
Contextual Info: 2N5771 MMBT5771 SOT-23 B Mark: 3R PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e ry high s p e e d s a tu ra te s w itc h in g at c o lle c to r c u rre n ts to 1 0 0 m A . S o u rc e d from P ro c e s s 6 5 . S e e P N 4 2 5 8 fo r c h a ra c te ristics .

2N5771

Abstract: PN4258 CBVK741B019 F63TNR MMBT5771 PN2222N
Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

2n5771

Abstract: 5B550 2N5910 PN5910 Transistor 2N5771
Contextual Info: Datasheet 2N5771 PN5910 C a | « Go n l 1 «tr 1 U l Sem iconductor Corp. 2N5910 JEDEC T 0 -9 2 JEDEC T 0 -1 0 6 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP SILICON SWITCH NG TRANSISTORS Manufacturers of World Class Discrete Semiconductors

2N5770

Contextual Info: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: 2N5770 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)15

Contextual Info: 2N5772 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition)20

2N5831

Abstract: 2n5962 2N5769 2N5771 2N5830 FTS05771 2N5833 2N5772 2N596 2n5961
Contextual Info: FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD A4 84D SEMICONDUCTOR • 27618 T D PNP Ultra High Speed Saturated Logic Switch A Schlum berger Com pany • B4t. =11=74 0 0 2 7 b i a 2N5771/FTS05771 r FAIRCHILD • • Y eJ PACK AGE 2N5771 FT S05 771 V c e o • • •15 V Min

2N5777

Abstract: 2N5777-80 2N5778 2N 5777 L14D1 ft 5777 L14D2 2N577 I461 L14D2 and 2n5777
Contextual Info: Light Detector r— Planar Silicon Photo-Darlington Amplifier 2N5777-80 i This General Electric Light Sensor Series is an NPN planar silicon photo-darlington amplifier. For many applications, only the collector and emitter leads are used. A base lead is provided to control

2N5770

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package E BC VHF/UHF Amplifier Mixer and Oscillator Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N5777

Contextual Info: 2N5777 MOD. SILICON NPN PHOTO DETECTOR DESCRIPTION: The 2N5777(MOD.) is Designed for General Purpose Industrial Photo Detector Applications. PACKAGE STYLE TO-92{V1) DIM A B C FEATURES: • High Sensitivity • Economical TO-92 compatible package D F G H J

2N5770

Abstract: PN918
Contextual Info: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol