2N5839 Search Results

TA7420

Abstract: TA7530 TA7513 2N5840 2NS83 Tektronix P6019 2N5839 2N5838 equivalent 2n5840
Contextual Info: 3875081 G E SOLID STATECI DE | 3 û 7 S D f l l 0017172 I D 7^77 High-Voltage Power Transistors _ 2N5838, 2N5839, 2N5840 File Number 410 High-Voltage, High-Power Silicon N-P-N Power Transistors

Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840

2N5839

Contextual Info: 2N5839 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5839

Contextual Info: 2N5839 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5838

Abstract: 2N5839 2N5840
Contextual Info: Inchange Semiconductor Product Specification 2N5838 2N5839 2N5840 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High breakdown voltage APPLICATIONS ・For use in switching power supply and other inductive switching circuits.

2n5872

Contextual Info: •4ö E Ö1331Ö7 » 0D0GM41 SEMELABE ISNLB M^b SEMELAB L T T>r-zr-ei BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2N5785 2N5786 2N5793 2N5794 2N5804 2N5805 2M5838 2N5839 2N5840

2N5840

Abstract: 2N5838 2N5839 t508 2N5833
Contextual Info: POWER TRANSISTORS 2 N5838 2N5839 2 N5840 3A, 375V Silicon NPN Mesa FEATURES D ESCRIPTION • C o lle c t o r -B a s e V o lta g e : u p to 375V • P e a k C o lle c t o r C u rre n t: 5A T h e s e h ig h v o lta g e g l a s s p a s s iv a t e d pow er t r a n s is t o r s c o m b in e f a s t s w itc h in g , low

7420A

Abstract: 7.5b 35 2N5840 2N5839
Contextual Info: File Number 410 2N5838, 2N5839, 2N5840 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Features: • M aximum safe-area-of-operation curves m Low saturation voltages

JANTX2N5157

Abstract: 2N3445
Contextual Info: Microsemi NPN Transistors Part Number 2N6316 2N3788 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 JAN2N3902 JANTX2N3902 2N5157 JAN2N5157 JANTX2N5157 JANTXV2N5157 2N5240 2N6542 2N6543 2N5049 2N5006 2NS008 2N5048 JANS2N5239 2N6563 2N6562 2N6569 2N5412 2N3597 2N3598

2N5838

Abstract: 2N5840 2N5839
Contextual Info: SavantIC Semiconductor Product Specification 2N5838 2N5839 2N5840 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For use in switching power supply and other inductive switching circuits.

TA7420

Abstract: 2N5840 2N5839
Contextual Info: HARRIS. SEfllCOND S E CT OR File Number SbE D 4302271 00404Ô1 Ô23 « H A S 2N5838, 2N5839, 2N5840 m 410 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Feature*:

2N5838

Abstract: 2N5839 2N5840
Contextual Info: Product Specification www.jmnic.com 2N5838 2N5839 2N5840 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage APPLICATIONS ・For use in switching power supply applications and other inductive switching circuits.

2n5415 complementary

Abstract: BFT19B 2N5239 2N5240 2N5838 2N5840 BD550B BUX16 BUX16A BUX16B
Contextual Info: TH O n S O N / D I S T R I B U T O R SflE D • “ia5t.a73 O O O S T E T ATT m TCSK - Bipolar Power Transistors High-Voltage Continued V cE(*at)-V *>FE v C E O (su s ) VCEV(SUS) V Type No. V 2N5240 FA M ILY (n-p-n) BUX16 BD550B 2N5239 2N5838 BUX16A 2N5839

Contextual Info: 2N5839 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5866

Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
Contextual Info: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75

1431T

Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

JAN2N3996

Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100

MJ1800

Abstract: 12HF 2N5839 motorola 352 transistor
Contextual Info: M O T O R O L A SC { D I O D E S / O P T O } 6367255 34 MOTOROLA SC Dlf| L.3L.75SS D D 3 7 ‘ìS4 1 DIODES/OPTO 34C 37954 D SILICON POWER TRANSISTOR DICE (continued) 2C6543 d ie n o . LINE SOURCE — PL500.352 & This die provides performance equal to or better than that of

40664 SCR

Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Contextual Info: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N3583

Abstract: 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430
Contextual Info: 1 1 0 J)L T R A N S I S T O R - CO • w - r w j ^ U I O D E ^ I H IN C A N S I A 4D S T O R C O D | 5646352 0D D D 13E 2 I M G - . . 8 4 P 1 3 2 D T > 3 2 » 0 5 ~ D1QDE TR^f\l515TQR CGJfUC. 201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561

2N2580

Abstract: 2N3080
Contextual Info: « HIGH VOLTAGE TRANSISTORS PT @ @ Ic V ceo Ic Veto I c e o @ 25°C MAX SUS V V MA Watts A MA 150 10 2N2580 325 100 400 3 2N2580M 150 10 325 100 400 3 150 10 325 100 400 2N2581 5 150 10 325 100 500 2N2582 5 2N2583 150 10 325 100 500 5 2N3079 150 10 325 100 200

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

Contextual Info: HIGH VOLTAGE TRANSISTORS MH PT @ @ @ IC Ic Veto Ic V ceo ICEO VcEX @ 25°C MAX SUS 125°C V MA V MA V MA Watts A 2N2580 150 10 325 100 400 5 2N2580M 150 10 3 Ì 5 1Ó0 400 5 2N2581 150 10 325 100 400 5 2N2582 150 10 325 100 500 5 150 2N2583 10 325 100 500