2N609 Search Results

TO-217

Contextual Info: 2N6093 NPN SILICON RF POWER TRANSISTOR YLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. VMBOL < m o 0.2D5 0.325

2n6097

Contextual Info: 2N6097 PNP SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6097 is Designed for 12.5 V Large-Signal Am plifier Applications to 175 MHz. PACKAGE STYLE .380" 4L FLG. MAXIMUM RATINGS IC 6.0 A v C EO 18 V v CBO 36 V DISS 60 W @ Tj = 25 0C -65 to +200 0C Tj

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6098 SILICON NPN - POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-220 The 2N6098 is an NPN Silicon Power Transistor for General Purpose

2N6099

Abstract: 2N6101 2n6099 npn 2N6098 2N6100
Contextual Info: Inchange Semiconductor Product Specification 2N6098 2N6099 2N6100 2N6101 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High current capability APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN

2N6098

Abstract: 0539D
Contextual Info: 2N6098 SILICON NPN - POWER TRANSISTOR DESCRIPTION: The 2N6098 is an NPN Silicon Power Transistor for General Purpose Switching and Amplifier Applications. MAXIMUM RATINGS lc 10 A Ib 4.0 A V ce 60 V P diss 75 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C

2N6097

Abstract: F980
Contextual Info: 2N6097 PNP SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6097 is Designed for 12.5 V Large-Signal Amplifier Applications to 175 MHz. PACKAGE STYLE .380" 4L FLG. MAXIMUM RATINGS . ^ 2 0 / ' 5 15 S 18 V VcEO MAX[MUM In ch e-; /nn MLNtMUM [nrhes/nn 6.0 A

Contextual Info: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers,

Contextual Info: 2N6097 m \\ PNP SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6097 is Designed for 12.5V Large-Signal Amplifier Applications to 175 MHz. PACKAGE STYLE .380" 4L FLG. MAXIMUM RATINGS M INIM UM 6.0 A VcEO 18 V "CBO 36 V ,£? 2 0 / 5,59 ,9 8 0 /? 4 ,& 9 . 3 8 5 / 9 , 7i J

Contextual Info: 2N6098 SILICON NPN - POWER TRANSISTOR DESCRIPTION: The 2N6098 is an NPN Silicon Power Transistor for General Purpose Switching and Amplifier Applications. MAXIMUM RATINGS lc 10 A Ib 4.0 A V ce 60 V P diss 75 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C

2N6101

Abstract: 2N6099 2N6098 2N6100 6099 2n6099 npn
Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION ・・With TO-220 package APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Transistor 2n6099

Abstract: 2N3773G 2N3773 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3773/2N6099 POWER TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS „ DESCRIPTION The UTC 2N3773/2N6099 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power

2N6093

Abstract: TO-217
Contextual Info: 2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. MAXIMUM RATINGS

7 amps pnp transistor

Abstract: b0243c B0239C NPN 1.5 AMPS POWER TRANSISTOR b0244c B0239A npn transistor bd243c PNP POWER TRANSISTOR TO220 B0244A 75W NPN TO220
Contextual Info: PLASTIC POWER P L A S T IC P O W E R T R A N S I S T O R S E L E C T O R C H A R T lc 4 Amps VCE° Volts N PN PN P 5 Amps N PN 7 Amps PN P N PN PN P > 7 Amps N PN PN P 10 Amps NPN 2N6288 2N6111 30 2N6103 40 BD239 BD240 BD241 BD242 BD243 BD244 BD243A BD244A 2N6099

2N6099

Abstract: 2N6101 2N6098 2N6100 2n6099 npn 6099
Contextual Info: SavantIC Semiconductor Product Specification 2N6098 2N6099 2N6100 2N6101 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION

2N4858 TEXAS

Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt

Contextual Info: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers,

SIEMENS 5SN

Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt

2N3773 transistor

Abstract: 2n3773
Contextual Info: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6099 Preliminary POWER TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS  DESCRIPTION The UTC 2N6099 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching

Contextual Info: 2N6098 SILICON NPN - POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE T0-220 The 2N6098 is an NPN Silicon Power Transistor for General Purpose Switching and Amplifier Applications. DIMENSIONS mm A B C D E F G H L M N P R S T U MAXIMUM RATINGS Ie 10 A IB 4.0 A o

Transistor 2n6099

Abstract: 2N3773 2N3773 transistor 2N3773 equivalent 2N6099 2N6609
Contextual Info: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers,

2N3773G

Abstract: 2N6099L
Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2N3773/2N6099 POWER TRANSISTOR COM PLEM EN T ARY SI LI CON T RAN SI ST ORS ̈ DESCRI PT I ON The UTC 2N3773/2N6099 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power

8CP69

Abstract: 8C304 2s81132 TO226AA 202-AA sk3262 2S8528 2S8549 SIEMENS 5SN 2SA885
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY