BD239 Search Results

BD239

Abstract: BD239A BD239B BD239C BD240
Contextual Info: BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD240 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available

BD239

Abstract: BD239C BD239A 2a 100v NPN BD239B
Contextual Info: Inchange Semiconductor Product Specification BD239/A/B/C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD240/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base

BD239

Abstract: BD239A BD239B BD239C
Contextual Info: SavantIC Semiconductor Product Specification BD239/A/B/C Silicon NPN Power Transistors DESCRIPTION With TO-220C package •Complement to type BD240/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

BD240

Abstract: bd* to-220 BD239
Contextual Info: BD239/A/B/C BD239/A/B/C Medium Power Linear and Switching Applications • Complement to BD240/A/B/C respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER

Contextual Info: BD239/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 240/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD239A 60 V : BD239B 80 V : BD239C 100 V C ollector-E m itter Voltage : BD239

transistor BD 246

Abstract: transistor BD 240 B0239 mj 3055 npn BD239 TEXAS INSTRUMENTS BDX 625 transistor mj 3055 transistor bd 242 operation of BD 139 transistor bd 138
Contextual Info: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted

B0415

Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
Contextual Info: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2

transistor BD 246

Abstract: TIP 32 transistor transistor TIP 32 bd 244 TIP 31 Transistor TIP 29 transistor transistor BD245 BD240 BD240A BD240B
Contextual Info: BD240, BD240A, BD240B, BD240C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD239A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current Min f-j- of 3 MHz at 10 V , 200 mA mechanical data All d im en sion s a re in mm

b0239c

Abstract: 7 amps pnp transistor TRANSISTOR T0220 PNP POWER TRANSISTOR TO220 B0243C BD243 B0243 b0244c npn transistor bd243c Transistor 2n6099
Contextual Info: PLASTIC POWER P L A S T IC P O W E R T R A N S IS T O R S E L E C T O R C H A R T lc 4 Am ps VCE° V o lts NPN PNP 5 Am ps NPN 7 Am ps PNP NPN PNP 7 Am ps NPN PNP > 10 A m ps NPN 2 N 6 2 8 8 2N 6 1 1 1 30 2N6103 40 BD239 BD240 B D 2 41 BD242 BD243 BD244 BD243A

bd639

Abstract: bd640 BF467 B0239C B0544 bd639 npn B0250C BD546D BD243 b0546
Contextual Info: Plastic Power Transistors 1? 2-6A Up to 65W oc Device Type B0239 BD239A B D 239B B D 239C BD240 BD240A BD240B BD240C BD241 BD241A B 0241 B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B B D 244C > o Ul o > > 'c u V V V A Ul

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C TO-220 Plastic Package BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS BD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORS

BD239

Abstract: BD239A
Contextual Info: BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD240 Series T0-220 PACKAGE TOP VIEW • 30 W at 25°C Case Temperature

BD239D

Contextual Info: BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • 30 W at 25°C Case Temperature • 2 A Continuous Collector Current • 4 A Peak Collector Current • Customer-Specified Selections Available SEPTEMBER 1981 - REVISED MARCH 1997

BD239

Abstract: d667 BD240 bd240b bd239c bd239b BD240A bd240c BD239A bd239c Transistor
Contextual Info: NPN BD239, A, B, C, PNP BD240, A, B, C, MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are the NPN. The BD240, A, B, C are the PNP. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications.

bd239

Contextual Info: <3s.mi-donau.ctoi L/^ioaucii, One, LS TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BD239/A/B/C Medium Power Linear and Switching Applications Jff " - A dlE ^ • Complement to BD240/A/B/C respectively

BD239

Abstract: tp 9054 B0239A b0239c BD239A BD239B BD239C BD240 BD240C IBD239B
Contextual Info: V N AMER PHILIPS/DISCRETE _ 2SE D 1I • . * ^53=131 001^303 5 ■ ^ ! BD239; BD239A J I B D 2 3 9 B ; BD239C T - 3 £ ~ £ > ? SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier

BD240

Abstract: BD240A BD240B BD240C
Contextual Info: BD240/A/B/C BD240/A/B/C Medium Power Linear and Switching Applications • Complement to BD239/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER

BD239

Abstract: BD239C BD239A BD239B
Contextual Info: BD239/A/B/C BD239/A/B/C Medium Power Linear and Switching Applications • Complement to BD240/A/B/C respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER

BD240

Abstract: BD240C BD240A BD240B
Contextual Info: Inchange Semiconductor Product Specification BD240/A/B/C Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD239/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

Contextual Info: 7 ^ 5 3 7 oosaagg b • n " - 3 3 -Q °| SCS-THOMSON •mera «« SJ3 BD239/A/B/C BD240/A/B/C S-THOMSON 3GE I> MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec

bd239a ti

Contextual Info: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.

B0415

Abstract: BD416 BD417 BD415 d44c3 b0416 b0636 BD303 B0536 BD239
Contextual Info: Power Transistors MAXIMUM RATINGS VCEO IC Pd mW (V) (A) H FE POLA­ RITY CASE BD239 BD239A BD239B BD240 BD240A BD240B N N N P P P TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 30 2 2 2 2 2 2 45 60 80 45 60 80 15 15 15 15 15 15 BD241 BD241A BD241B

TIP 29 transistor

Abstract: TIP 31 Transistor TIP 32 transistor transistor TIP 32 transistor TIP 31 tip 31 power transistor tip 40 power transistor TIP 40 TRANSISTOR transistor tip 125 TIP 36 transistor
Contextual Info: BD240, BD240A, BD240B, BD240C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD239A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current Min f-j- of 3 MHz at 10 V , 200 mA mechanical data All d im en sion s a re in mm

d239ab

Abstract: CS696 bd240c D239 D239B d240a D239 PNP
Contextual Info: rZ Z SG S -TH O M SO N B D239/A /B /C B D 240/A /B /C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium