2N6099
Abstract: 2N6101 2n6099 npn 2N6098 2N6100
Text: Inchange Semiconductor Product Specification 2N6098 2N6099 2N6100 2N6101 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High current capability APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN
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2N6098
2N6099
2N6100
2N6101
O-220
2N6098
2N6100
2N6099
2N6101
2n6099 npn
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2N6099
Abstract: 2N6101 2N6098 2N6100 2n6099 npn 6099
Text: SavantIC Semiconductor Product Specification 2N6098 2N6099 2N6100 2N6101 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION
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2N6098
2N6099
2N6100
2N6101
O-220
2N6098
2N6099
2N6100
2N6101
2n6099 npn
6099
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2N6101
Abstract: 2N6099 2N6098 2N6100 6099 2n6099 npn
Text: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION ・・With TO-220 package APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2N6098
2N6099
2N6100
2N6101
O-220
2N6098
2N6100
2N6099
2N6101
6099
2n6099 npn
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BD278
Abstract: RCA3055 2N5578
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont'd h v C E O ( us) S V C E X V (sus) V FE V 'cEX-mA <C A V CE V Temp.-°C 25 V C £ (sat)-V •c A CE V >B A 2N5578 FAMILY (n-p-n) High Current, High Po - 0.4 MHz min; P j = 300 W max T 2N5575
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2N5578
2N5575
2N5578*
2N5786
O-39/TO-205MD
O-5/TO-205MA
2N5785
2N5784
2ISI6103
BD278
RCA3055
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radiator
Abstract: RCA1C09
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont'd h v C E O ( us) S V C E X V (sus) V FE V 'cEX-mA <C A V CE V Temp.-°C 25 V C £ (sat)-V •c A CE V >B A 2N5578 FAMILY (n-p-n) High Current, High Po - 0.4 MHz min; P j = 300 W max T 2N5575
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2N5578
2N5575
2N5578*
2N5786
O-39/TO-205MD
O-5/TO-205MA
2N5785
2N5784
2ISI6103
radiator
RCA1C09
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7 amps pnp transistor
Abstract: b0243c B0239C NPN 1.5 AMPS POWER TRANSISTOR b0244c B0239A npn transistor bd243c PNP POWER TRANSISTOR TO220 B0244A 75W NPN TO220
Text: PLASTIC POWER P L A S T IC P O W E R T R A N S I S T O R S E L E C T O R C H A R T lc 4 Amps VCE° Volts N PN PN P 5 Amps N PN 7 Amps PN P N PN PN P > 7 Amps N PN PN P 10 Amps NPN 2N6288 2N6111 30 2N6103 40 BD239 BD240 BD241 BD242 BD243 BD244 BD243A BD244A 2N6099
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2N6288
2N6111
2N6103
BD239
BD241
BD243
2N6290
2N6109
BD239A
BD240A
7 amps pnp transistor
b0243c
B0239C
NPN 1.5 AMPS POWER TRANSISTOR
b0244c
B0239A
npn transistor bd243c
PNP POWER TRANSISTOR TO220
B0244A
75W NPN TO220
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2N3055 TO-220
Abstract: 7 amps pnp transistor 2N3055 2N6103 B0243C 2N3055 TO220 BD243 TRANSISTOR T0220 2N6101 75W PNP
Text: NPN DIFFUSED JUNCTION T A B L E 1 - NPN S ILIC O N D IF F U S E D JU N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a wide variety
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2N6103
T0-220
2N3055*
2N3442
2N6101
O-220
2N3441
2N6288
2N6111
2N6103
2N3055 TO-220
7 amps pnp transistor
2N3055
B0243C
2N3055 TO220
BD243
TRANSISTOR T0220
75W PNP
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TIP 2n3055
Abstract: tip41c tip42c 2n3055 2N3055 TO-220 2n3055 application note OF transistor 2n3055 to-3 package 7 amps pnp transistor 2N3055 TO220 NPN 1.5 AMPS POWER TRANSISTOR n6111 2N6103
Text: NPN DIFFUSED JUNCTION T A B L E 1 - N P N S IL IC O N D IF F U S E D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching
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2N6103
2N3055
FGT3055
T0-220
2N3442
2N610KAGE)
2N6288
2N6111
TIP29
TIP30
TIP 2n3055
tip41c tip42c 2n3055
2N3055 TO-220
2n3055 application note
OF transistor 2n3055 to-3 package
7 amps pnp transistor
2N3055 TO220
NPN 1.5 AMPS POWER TRANSISTOR
n6111
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Untitled
Abstract: No abstract text available
Text: PLESSEY SEHICOND/DISCRETE 'IS NPN DIFFUSED JUNCTION i - 33. D ËT | 725GS33 □oo4cmb j / T A B L E 1 - N P N S IL IC O N D IF F U SE D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a
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725GS33
2N6103
O-220
2N3055
FGT3055
2N3442
2N6101
T0-220
2N6099
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2N3055 TO-220
Abstract: 2n3055 to 220 2N3055 TO220 2N3055 2N6103 FGT3055 "Solenoid Drivers" 2N3442 2N3054 2N3441
Text: NPN DIFFUSED JUNCTION T A B L E 1 - N P N S IL IC O N D IF F U S E D J U N C T IO N T R A N S IS T O R S The transistors show n in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching
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2N6103
2N3055
FGT3055
T0-220
2N3442
2N610t,
2N3055 TO-220
2n3055 to 220
2N3055 TO220
"Solenoid Drivers"
2N3054
2N3441
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2N3055
Abstract: 2N3055 TO220 2N3055 TO-220 "Solenoid Drivers" 2N3442 2N6103 2N3054 2N3441 2N6099 2N6101
Text: NPN DIFFUSED JUNCTION T A B L E 1 - NPN S ILIC O N D IF F U S E D JU N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a wide variety
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2N6103
T0-220
2N3055*
2N3442
2N6101
O-220
2N3055
2N3055 TO220
2N3055 TO-220
"Solenoid Drivers"
2N3054
2N3441
2N6099
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2N3055 TO-220
Abstract: FGT3055 2N3054 2N3055 2N3440 2N3441 2N3442 2N3583 2N6099 2N6101
Text: NPN DIFFUSED JUNCTION TABLE 1 -N P N SILICON DIFFUSED JUNCTION TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching
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2N6103
2N3055
FGT3055
T0-220
2N3442
2N610y
2N3441
2N3585
2N3584
2N3055 TO-220
2N3054
2N3440
2N3583
2N6099
2N6101
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Untitled
Abstract: No abstract text available
Text: Power Transistors TO-220 Case TYPE NO. NPN PNP >C PD A (W) MAX @ 1C hFE BVCBO BVCEO (A) (V) 00 MIN MIN MIN MAX VCE(SAT) @ 1C (V) (A) MAX fT (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60
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O-220
2N5294
2N5296
2N5298
2N5490
2N5492
2N5494
2N5496
2N6387
2N6667
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transistor c117
Abstract: JAN2N3055 C116 2N3232
Text: SOLITRON DEVICES INC TSD D ~ X - g >\ -o \ fl3bflbOS 0002TG7 7 ^ [^ © ü © ? © A T M ,© * MEDIUM VOLTAGE a lit r o • Devices, inc CHIP N U M BER NPN SINGLE DIFFUSED MESA TRANSISTOR (FORMERLY 45) CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.
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0002TG7
2N3232,
2N6099,
2N6101
C-116
C-117
transistor c117
JAN2N3055
C116
2N3232
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transistor c117
Abstract: JAN2N3055 2N3232
Text: MEDIUM VOLTAGE Devices. Inc. CHIP NUMBER NPN SINGLE DIFFUSED MESA TRANSISTOR FORMERLY 45 CONTACT METALLIZATION B a se. Emitter and Collector Solder Coated 9 5 /5 % lead /tin. A SSEM B LY R EC O M M E N D A TIO N S It is advisable that: a ) the chip b e assem bled in a reducing g a s atm osphere.
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12nun)
JAN2N3055,
2N6253.
2N3232.
2N6099.
2N6101
C-116
C-117
transistor c117
JAN2N3055
2N3232
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Untitled
Abstract: No abstract text available
Text: Power Transistors f TO-220 Case TYPE NO. NPN PNP «C PD bvcbo BVCEO A (W) (V) (V) MIN MIN tm MAX MAX • ic (A) VCE(SAT) @ 1C (V) (A) fr (MHz) MIN MAX 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80
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O-220
2N5294
2N5296
2N5298
2N5490
2N5492
2N5494
2N5496
2N6043
2N6044
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2N6476
Abstract: 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6099 2N6101
Text: O Power Transistors TO-220 Case TYPE NO. NPN PNP >C PD A (W) MAX @ ic hFE BVCBO BVCEO (A) (V) 00 MIN MIN MIN MAX VCE(SAT) @ IC (V) (A) fT (MHz) MIN MAX 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80
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O-220
2N5294
2N5296
2N5298
2N5490
2N5492
2N5494
2N5496
2n6043
2n6040
2N6476
2N5294
2N5296
2N5298
2N5490
2N5492
2N5494
2N5496
2N6099
2N6101
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2N3055
Abstract: 2N3055 TO-220 2N3054 2N3440 2N3441 2N3442 2N3583 2N3584 2N6099 2N6101
Text: NPN DIFFUSED JUNCTION TABLE 1 - NPN SILICON DIFFUSED JUNCTIO N TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a w ide variety
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2N6103
T0-220
2N3055*
2N3442
2N6101
O-220
2N3441
2N3585
2N3584
2N3055
2N3055 TO-220
2N3054
2N3440
2N3583
2N6099
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Untitled
Abstract: No abstract text available
Text: SEMELAB LTD 3?E J> 8133107 00D005S 7 • SMLB ■iMIJSMJ:1 Type No. Option 2N6038 Polarity Package < o m O h * tfftr rtfm iii •c cont hF E @ V c e /1c fT Pd NPN NPN NPN PNP PNP SOT 3 2 SOT32 T063 T066 TO 3 60 80 100 55 60 4 4 29 4 12 750-15k 750-15k 20-100
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00D005S
2N6038
750-15k
750-12k
750-18k
750min
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MJE3055F
Abstract: SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 2N5683 2N5684 2N5685
Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)
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2N5685
2N5683
2N5686
2N5684
2N3440
2N6387*
1K/20K
O-220
MJE30S5F
MJE3055F
SE9300
FT3055
2N3715 FAIRCHILD
FT50
SE9303
2N3440
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TIP31c PNP Transistor
Abstract: n6111 FGT3055 TIP41C TRANSISTOR Tip41-Tip42 TIP32 NPN Transistor BD243 TIP41/TIP42 Transistor 2n6099 tip30c
Text: PLASTIC POWER P L A S T IC PO W ER T R A N S IS T O R S E L E C T O R C H A R T TO-220 P A C K A G E lc 3 Am ps (TIP) lc 4 Am ps (BD) V CEO Volts NPN PNP 7 Am ps 5 Am ps NPN NPN PNP 2N6288 2N6111 PNP 30 7 Am ps NPN PNP 40 TIP29 TIP30 TIP31 TIP32 TIP41 TIP42
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O-220
2N6288
2N6111
TIP29
TIP30
TIP31
TIP32
TIP41
TIP42
2N6103
TIP31c PNP Transistor
n6111
FGT3055
TIP41C
TRANSISTOR Tip41-Tip42
TIP32 NPN Transistor
BD243
TIP41/TIP42
Transistor 2n6099
tip30c
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JE2901
Abstract: 2N6044 JE802T JE802 JE801T JE702 LM3661TL-1.40
Text: o Power Transistors T Y P E NO. NPN PNP @ ic ic PD B V C BO BVCEO A (W) (V) (V) MIN MIN MIN MAX MAX hFE (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60 20 80 1.5
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2N5294
2N5296
2N5298
2N5490
2N5492
2N5494
2N5496
2N6043
2N6044
2N6045
JE2901
JE802T
JE802
JE801T
JE702
LM3661TL-1.40
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mje13007
Abstract: No abstract text available
Text: O Power Transistors TO-220 Case TYPE NO. NPN PNP tc PD <A W) MAX BVCBO BVCEO @ ic hFE <V) 00 MIN MIN MIN MAX (A) VCE(SAT) @ 1C CO (A) MAX fr (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80
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O-220
2N5294
2N5296
2N5298
2N5490
2N5492
2N5494
2N5496
2N6040
2N6041
mje13007
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radiator 0,019
Abstract: 2n5578
Text: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max
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2N5578
2N5575
2N5786
2N5783
2N5785
O-39/TO-205MD
O-5/TO-205M
2N6103
radiator 0,019
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