2N6259 Search Results

2N6259

Contextual Info: Back to Bipolar Power Transistors 2N6259 M A X IM U M R A T IN G S - A b so lute-M axim um V alues: • ^CBO. 1 7 0 . V • ^ CEO.

2N434B

Abstract: 2N6259
Contextual Info: i, Line. <z3E,ml-L.onauctoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3773, 2N4348, 2N6259 Hometaxial-Base, High-Current Silicon N-P-N Transistors Features: • High dissipation capability 120 W I2N4348), 150 W (2N3773), 250 W (2N6269)

2N4348

Abstract: 2N6259
Contextual Info: le c t r o n ic s in c . POW ER TRAN SISTORS PT TYPE NO. TO-3 M AXIM UM RATINGS @ Ic 25°C BV cbo B V ceo B V ebo V V V A Watts 2N3773 150 160 140 2N4348 120 140 120 2N6259 250 170 150 7 7 7 FE Sat Voltages V ce V be V V @ Ic A MIN MAX V'CE V Test Conditions

2n6259

Contextual Info: Product Specification www.jmnic.com 2N6259 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators

2n6259

Abstract: 2N6259 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2N6259 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and DC-DC converters or inverters

2N6259

Abstract: 2N6259 amplifier
Contextual Info: Ü&MOSPEC HIGH POWER NPN SILICON TRANSISTORS NPN 2N6259 The 2N6259 is power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and dc to dc converters or inverters. FEATURES:

2N6259

Abstract: 2n3773 2N3773A 2N4348 2N 6259 2n3773m
Contextual Info: Power Transistors File Number 526 2N3773, 2N4348, 2N6259 HARRIS SEMICOND SECTOR 27E D High-Voltage, High-Current Power Transistors Broadly Applicable Devices for Industrial and Commercial Use 43Ü5571 ÜGnaSM 3 « H A S T-33-I5 TERMINAL DESIGNATIONS T " I- 3

2N6259 amplifier

Abstract: 2N6259 "Solenoid Drivers" 2N6259 equivalent high power npn 8A NPN Transistor 8A 2N6259 inchange
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6259 DESCRIPTION •DC Current Gain: hFE= 15-60@IC= 8A ·High Power Dissipation : PD= 150W@ IC= 15A APPLICATIONS ·Designed for high power audio, disk head positioners, linear

Contextual Info: 2N6259 ^ 1 W ^NEW ENGLAND SEMICONDUCTOR MAXIMUM RATINGS - Absolute-Maximum Values: * ^CBO. * ^ CEO.

2n6259

Contextual Info: 2N6259 High Voltage - High Power Transistor. 170V - 250W. 12.98 Transistors Bipolar . Page 1 of 1 Enter Your Part # Home Part Number: 2N6259 Online Store 2N6259 Diodes Hig h V olt age - Hig h P ow er Tr ans ist or. 1 70V - 250W . Transistors Integrated Circuits

2n6259

Contextual Info: <$£ ni-Conduetor ZPwauoti, Una. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HIGH POWER NPN SILICON TRANSISTORS NPN 2N6259 The 2N6259 is power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching

RCA-2N3773

Abstract: 2N6259 RCA 2N3773 2n3773 rca 2N4348 RCA 2n6259 2N4348 2n3773 power Amplifier 8a103 2N6259 amplifier
Contextual Info: 01 3875081 G E SOLID STATE uenerai-K urpose Kower iransisiuis» DE|3a?50ôl 01E 0017370 4 17370 d — 2N3773, 2N4348, 2N6259 High-Voltage, High-Current Power Transistors | T - 3 B ' /3 File Number 526 TERMINAL DESIGNATIONS Broadly Applicable Devices for Industrial and Commercial Use

transistor c118

Abstract: 2N6259 equivalent 2n6258 2N6258 equivalent 2n6259
Contextual Info: i?[M [5)y Tr -Jfotitron M ED IU M TO HIGH V O L T A G E Devices. Inc CHIP NUM BER 4 NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 49) CONTACT METALLIZATION B ase, Emitter and Collector Solder C oated 9 5 /5 % lead /tin. ASSEMBLY RECOMMENDATIONS .300” It is advisable that:

IC 8030

Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
Contextual Info: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N3054

Abstract: 2n3773 power Amplifier 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . P t to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . A A i 9U X 9U le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

transistor 40411

Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
Contextual Info: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

mj15052

Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
Contextual Info: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of

Ultrasonic amplifier 50w

Abstract: 2n377 2n3773 power Amplifier BDY29 BDY37 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink