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onsemi 2N6338 TRANS NPN 100V 25A TO204
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DigiKey	2N6338	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc 2N6338 NPN TRANSISTOR
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Onlinecomponents.com	2N6338					1 - 10 - 100 $51.5 1000 $51.5 10000 $51.5	Buy Now
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Master Electronics	2N6338					1 - 10 - 100 $51.5 1000 $51.5 10000 $51.5	Buy Now
onsemi 2N6338G TRANS NPN 100V 25A TO204
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Verical	2N6338G		1		1	1 $6.362 10 $6.362 100 $6.362 1000 $6.362 10000 $6.362	Buy Now
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Flip Electronics 2N6338G TRANS NPN 100V 25A TO204
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DigiKey	2N6338G	Tray			90	1 - 10 - 100 $5.99 1000 $5.99 10000 $5.99	Buy Now
Microchip Technology Inc JAN2N6338 TRANS NPN 100V 25A TO3
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DigiKey	JAN2N6338	Bulk			100	1 - 10 - 100 $98.9705 1000 $98.9705 10000 $98.9705	Buy Now
Avnet Americas	JAN2N6338	Bulk		36 Weeks	100	1 $106.58 10 $106.58 100 $98.97 1000 $95.16 10000 $95.16	Buy Now
Newark	JAN2N6338	Bulk			100	1 - 10 - 100 $98.97 1000 $95.16 10000 $95.16	Buy Now
Microchip Technology Inc	JAN2N6338					1 $106.58 10 $106.58 100 $106.58 1000 $106.58 10000 $106.58	Buy Now
NAC	JAN2N6338	Tray			3	1 $108.76 10 $108.76 100 $100.17 1000 $92.84 10000 $92.84	Buy Now

Master Electronics	JAN2N6338					1 - 10 - 100 $97.49 1000 $97.49 10000 $97.49	Buy Now

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2N6338 Datasheets (55)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6338	Microsemi	NPN power transistor, 100V, 25A - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200	Original	PDF
2N6338	On Semiconductor	High-Power NPN Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200	Original	PDF
2N6338	On Semiconductor	2N6338 - TRANSISTOR 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 1-07, TO-3, 2 PIN, BIP General Purpose Power	Original	PDF
2N6338	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N6338	API Electronics	25 AMPS / 30 AMPS NPN Transistors	Scan	PDF
2N6338	API Electronics	25 Amp Transistors	Scan	PDF
2N6338	Boca Semiconductor	HIGH-POWER NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200	Scan	PDF
2N6338	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N6338	General Semiconductor	Low Frequency Silicon Power NPN Transistor	Scan	PDF
2N6338	Mospec	POWER TRANSISTOR(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200	Scan	PDF
2N6338	Mospec	High-Power NPN Silicon Transistor	Scan	PDF
2N6338	Motorola	The European Selection Data Book 1976	Scan	PDF
2N6338	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6338	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF

2N6338	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6338	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6338	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6338	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6338	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N6338	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF

2N6338 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6339 Abstract: 2N6340 2N6338 2N6341 2N6436 Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier	Original	PDF	2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6339 2N6340 2N6341
2N3265 Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858 Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00	Original	PDF	2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
Untitled Abstract: No abstract text available Text: 2N6338X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6338X O204AA) 18-Jun-02
equivalent to tip162 Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338	Original	PDF	2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
2N6341 Abstract: 2N6338G 2N6338 2N6341G Text: 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341	Original	PDF	2N6338, 2N6341 2N6338 2N6341 2N6338/D 2N6338G 2N6338 2N6341G
2N6339 Abstract: motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6436 2N6338-D Text: MOTOROLA Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —	Original	PDF	2N6338/D 2N6338 2N6339 2N6340 2N6341* 2N6341 2N6436 2N6339 motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6338-D
1N4933 Abstract: 2N6338 2N6341 Text: ON Semiconductort High-Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage – VCEO sus = 100 Vdc (Min) – 2N6338	Original	PDF	2N6338 2N6341* 2N6341 r14525 2N6338/D 1N4933 2N6338 2N6341
Untitled Abstract: No abstract text available Text: 2N6338X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6338X O204AA) 16-Jul-02
1N4933 Abstract: 2N6338 2N6341 Text: ON Semiconductort High−Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338	Original	PDF	2N6338 2N6341* 2N6341 2N6338/D 1N4933 2N6338 2N6341
2N6341 Abstract: 2n6338 Text: 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341	Original	PDF	2N6338, 2N6341 2N6338 2N6338/D 2N6341 2n6338
2N6436 Abstract: 2N6437 2N6438 2N6338 2N6341 Text: SavantIC Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6338~2N6341 APPLICATIONS	Original	PDF	2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N6438 2N6341
2N6437 Abstract: 2N6438 2N6436 2n6438a 2N6338 2N6341 power transistors Text: Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6338~2N6341 APPLICATIONS	Original	PDF	2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N643current 2N6438 2n6438a 2N6341 power transistors
power BJT pnp Abstract: JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372 Text: Fall 1998/Winter 1999 Bipolar Transistors in Space bipolar chip types that are MIL qualified in older TO-3’s and have a radiation tolerant structures, can be put in more reliable TO-254’s. Examples of this are the 2N6338 NPN and 2N6437(PNP) that are complementary 100V, 200W	Original	PDF	1998/Winter O-254' 2N6338 2N6437 PP6338M PP6437M 2500mA) 2N7272 FRL9130D power BJT pnp JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372
JANTX 2N6341 Abstract: ADC 0803 datasheet adc-ic 2N6338 2N6341 all ic data all ic datasheet 1000C 2000C Text: TECHNICAL DATA 2N6338 JANTX, JTXV 2N6341 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/509 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current	Original	PDF	2N6338 2N6341 MIL-PRF-19500/509 1000C 2N6338 2N6341 2000C 87Adc, JANTX 2N6341 ADC 0803 datasheet adc-ic all ic data all ic datasheet 1000C 2000C

Untitled Abstract: No abstract text available Text: m 2N6338 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6338 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3/TO-204AA U I *J MAX. I MAXIMUM RATINGS 25 A lc 50 A PEAK 100 V V ce 200 W @ Tc = 25 °C	OCR Scan	PDF	2N6338 2N6338 3/TO-204AA
BUT36 Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885 Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts	OCR Scan	PDF	BUT36 2N5885 2N5883 2N5886 2N5884 2N6436 2N6338 2N6437 2N6339 2N6438 BUT36 BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98
2N5330 Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts	OCR Scan	PDF	2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N5330 2N5672 2N6258 2N2824 2N2825 2N3771 2N3846
2N2820 Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 Text: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je\|WsÍ1mD53iT D \| CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63	OCR Scan	PDF	000D53J 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6320 2N6339 2N6340
2N6341 Abstract: 2N6338 2N6339 2N6340 High-Power NPN Silicon Power Transistor Text: HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage	OCR Scan	PDF	2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz) High-Power NPN Silicon Power Transistor
2N5330 Abstract: No abstract text available Text: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100	OCR Scan	PDF	2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771 2N5330
Untitled Abstract: No abstract text available Text: "73 GENERAL SEMICONDUCTOR DË"\| 3=1105^0 -Oüdl'lB'l H \| ~ 3918590 GENERAL SE MI CO N DU CT OR . ^ 72C 01939 D " 7 '-3 3~¿><T ik . General Semiconductor Industries, Inc. S q U H R E n COMPANY Typical Device Types: 2N6249-2N6251, 2N6338-2N6341, GSTU30020	OCR Scan	PDF	2N6249-2N6251, 2N6338-2N6341, GSTU30020 30nsec 150nsec 1500nsec 280nsec TWX910-950-1942
Untitled Abstract: No abstract text available Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts	OCR Scan	PDF	2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771
2N2823 Abstract: 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 2N6338 2N6339 2N6340 Text: I - 18 E i l M l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts	OCR Scan	PDF	2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N2824 2N2825 2N3771 2N3846
2N6339 Abstract: 2N6338 2N6340 2N6341 Text: Æà MOS PEC HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage	OCR Scan	PDF	2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz)

2N6338 Search Results

2N6338 Price and Stock

onsemi 2N6338

Microchip Technology Inc 2N6338

onsemi 2N6338G

Flip Electronics 2N6338G

Microchip Technology Inc JAN2N6338

2N6338 Datasheets (55)

2N6338 Datasheets Context Search

2N6339

2N3265

Untitled

equivalent to tip162

2N6341

2N6339

1N4933

Untitled

1N4933

2N6341

2N6436

2N6437

power BJT pnp

JANTX 2N6341

Untitled

BUT36

2N5330

2N2820

2N6341

2N5330

Untitled

Untitled

2N2823

2N6339