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    2N6338 Price and Stock

    Flip Electronics 2N6338G

    TRANS NPN 100V 25A TO204
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    Rochester Electronics LLC 2N6338G

    POWER BIPOLAR TRANSISTOR, 25A, 1
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    onsemi 2N6338

    TRANS NPN 100V 25A TO204
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    Microchip Technology Inc 2N6338

    NPN TRANSISTOR
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    onsemi 2N6338G

    TRANS NPN 100V 25A TO204
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    2N6338 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6338 Microsemi NPN power transistor, 100V, 25A - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Original PDF
    2N6338 On Semiconductor High-Power NPN Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Original PDF
    2N6338 On Semiconductor 2N6338 - TRANSISTOR 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 1-07, TO-3, 2 PIN, BIP General Purpose Power Original PDF
    2N6338 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6338 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N6338 API Electronics 25 Amp Transistors Scan PDF
    2N6338 Boca Semiconductor HIGH-POWER NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6338 Diode Transistor Transistor Short Form Data Scan PDF
    2N6338 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6338 Mospec POWER TRANSISTOR(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6338 Mospec High-Power NPN Silicon Transistor Scan PDF
    2N6338 Motorola The European Selection Data Book 1976 Scan PDF
    2N6338 Motorola European Master Selection Guide 1986 Scan PDF
    2N6338 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6338 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6338 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6338 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6338 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6338 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6338 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    2N6338 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6339

    Abstract: 2N6340 2N6338 2N6341 2N6436
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier


    Original
    PDF 2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6339 2N6340 2N6341

    2N3265

    Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
    Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00


    Original
    PDF 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858

    Untitled

    Abstract: No abstract text available
    Text: 2N6338X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6338X O204AA) 18-Jun-02

    equivalent to tip162

    Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338


    Original
    PDF 2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632

    2N6341

    Abstract: 2N6338G 2N6338 2N6341G
    Text: 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341


    Original
    PDF 2N6338, 2N6341 2N6338 2N6341 2N6338/D 2N6338G 2N6338 2N6341G

    2N6339

    Abstract: motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6436 2N6338-D
    Text: MOTOROLA Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —


    Original
    PDF 2N6338/D 2N6338 2N6339 2N6340 2N6341* 2N6341 2N6436 2N6339 motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6338-D

    1N4933

    Abstract: 2N6338 2N6341
    Text: ON Semiconductort High-Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage – VCEO sus = 100 Vdc (Min) – 2N6338


    Original
    PDF 2N6338 2N6341* 2N6341 r14525 2N6338/D 1N4933 2N6338 2N6341

    Untitled

    Abstract: No abstract text available
    Text: 2N6338X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6338X O204AA) 16-Jul-02

    1N4933

    Abstract: 2N6338 2N6341
    Text: ON Semiconductort High−Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338


    Original
    PDF 2N6338 2N6341* 2N6341 2N6338/D 1N4933 2N6338 2N6341

    2N6341

    Abstract: 2n6338
    Text: 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341


    Original
    PDF 2N6338, 2N6341 2N6338 2N6338/D 2N6341 2n6338

    2N6436

    Abstract: 2N6437 2N6438 2N6338 2N6341
    Text: SavantIC Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6338~2N6341 APPLICATIONS


    Original
    PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N6438 2N6341

    2N6437

    Abstract: 2N6438 2N6436 2n6438a 2N6338 2N6341 power transistors
    Text: Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6338~2N6341 APPLICATIONS


    Original
    PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N643current 2N6438 2n6438a 2N6341 power transistors

    power BJT pnp

    Abstract: JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372
    Text: Fall 1998/Winter 1999 Bipolar Transistors in Space bipolar chip types that are MIL qualified in older TO-3’s and have a radiation tolerant structures, can be put in more reliable TO-254’s. Examples of this are the 2N6338 NPN and 2N6437(PNP) that are complementary 100V, 200W


    Original
    PDF 1998/Winter O-254' 2N6338 2N6437 PP6338M PP6437M 2500mA) 2N7272 FRL9130D power BJT pnp JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372

    JANTX 2N6341

    Abstract: ADC 0803 datasheet adc-ic 2N6338 2N6341 all ic data all ic datasheet 1000C 2000C
    Text: TECHNICAL DATA 2N6338 JANTX, JTXV 2N6341 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/509 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original
    PDF 2N6338 2N6341 MIL-PRF-19500/509 1000C 2N6338 2N6341 2000C 87Adc, JANTX 2N6341 ADC 0803 datasheet adc-ic all ic data all ic datasheet 1000C 2000C

    Untitled

    Abstract: No abstract text available
    Text: m 2N6338 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6338 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3/TO-204AA U I *J MAX. I MAXIMUM RATINGS 25 A lc 50 A PEAK 100 V V ce 200 W @ Tc = 25 °C


    OCR Scan
    PDF 2N6338 2N6338 3/TO-204AA

    BUT36

    Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts


    OCR Scan
    PDF BUT36 2N5885 2N5883 2N5886 2N5884 2N6436 2N6338 2N6437 2N6339 2N6438 BUT36 BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98

    2N5330

    Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N5330 2N5672 2N6258 2N2824 2N2825 2N3771 2N3846

    2N2820

    Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340
    Text: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je|WsÍ1mD53iT D | CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63


    OCR Scan
    PDF 000D53J 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6320 2N6339 2N6340

    2N6341

    Abstract: 2N6338 2N6339 2N6340 High-Power NPN Silicon Power Transistor
    Text: HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan
    PDF 2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz) High-Power NPN Silicon Power Transistor

    2N5330

    Abstract: No abstract text available
    Text: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100


    OCR Scan
    PDF 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771 2N5330

    Untitled

    Abstract: No abstract text available
    Text: "73 GENERAL SEMICONDUCTOR DË"| 3=1105^0 -Oüdl'lB'l H | ~ 3918590 GENERAL SE MI CO N DU CT OR . ^ 72C 01939 D " 7 '-3 3~¿><T ik . General Semiconductor Industries, Inc. S q U H R E n COMPANY Typical Device Types: 2N6249-2N6251, 2N6338-2N6341, GSTU30020


    OCR Scan
    PDF 2N6249-2N6251, 2N6338-2N6341, GSTU30020 30nsec 150nsec 1500nsec 280nsec TWX910-950-1942

    Untitled

    Abstract: No abstract text available
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771

    2N2823

    Abstract: 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 2N6338 2N6339 2N6340
    Text: I - 18 E i l M l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N2824 2N2825 2N3771 2N3846

    2N6339

    Abstract: 2N6338 2N6340 2N6341
    Text: Æà MOS PEC HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan
    PDF 2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz)