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    2N5885 Price and Stock

    Microchip Technology Inc 2N5885

    PNP POWER TRANSISTOR SILICON AMP
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    Mouser Electronics 2N5885
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    Master Electronics 2N5885
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    onsemi 2N5885G

    TRANS NPN 60V 25A TO204
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    Verical 2N5885G 3,844 78
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    2N5885G 33 33
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    Rochester Electronics 2N5885G 3,974 1
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    Rochester Electronics LLC 2N5885G

    POWER BIPOLAR TRANSISTOR, 25A, 6
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    Central Semiconductor Corp 2N5885-PBFREE

    TRANS NPN 60V 25A TO3
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    Solid State Devices Inc (SSDI) 2N5885

    To 3 25 Amp Silicon Transistor Rohs Compliant: Yes |Solid State 2N5885
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    Quest Components 2N5885 1
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    Find more 2N5885 price and stock on Findchips.com

    2N5885 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5885 On Semiconductor Complementary Silicon High-Power Transistors Original PDF
    2N5885 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
    2N5885 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5885 API Electronics 25 Amp Transistors Scan PDF
    2N5885 Boca Semiconductor COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5885 Central Semiconductor Leaded Power Transistor General Purpose Scan PDF
    2N5885 Diode Transistor Transistor Short Form Data Scan PDF
    2N5885 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5885 General Electric High-current, high-power, high-speed power transistor. 60V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5885 General Transistor Power Transistor Selection Guide Scan PDF
    2N5885 Mospec POWER TRANSISTORS(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5885 Mospec Complementary Silicon High-Power Transistor Scan PDF
    2N5885 Motorola The European Selection Data Book 1976 Scan PDF
    2N5885 Motorola European Master Selection Guide 1986 Scan PDF
    2N5885 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5885 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5885 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5885 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5885 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5885 Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2N5885 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5884

    Abstract: 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885 2N5886
    Text: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features


    Original     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA 2N5883/D 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885

    2N3265

    Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
    Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00


    Original     		PDF 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858

    2n5885

    Abstract: No abstract text available
    Text: 2N5885 High-current - High-power - High-speed Power Transistor. 60V . 1 of 2 Home Part Number: 2N5885 Online Store 2N5885 Diodes High- current - High-po w er - High- s peed Po w er Trans is t o r. Transistors


    Original     		PDF 2N5885 com/2n5885 2N5885

    Untitled

    Abstract: No abstract text available
    Text: 2N5885 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5885 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5885 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)25


    Original     		PDF 2N5885 time700n

    2n5885

    Abstract: 2N5886 Vce (sat)40V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION •DC Current Gain: hFE= 20 Min @IC= 10A ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 15A ·Complement to Type 2N5883/5884 APPLICATIONS ·Designed for general purpose power amplifier and switching


    Original     		PDF 2N5885/5886 2N5883/5884 2N5885 2N5886 2n5885 2N5886 Vce (sat)40V

    2N5886

    Abstract: 2N5885 2N5883 2N5884
    Text: SavantIC Semiconductor Product Specification 2N5885 2N5886 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications


    Original     		PDF 2N5885 2N5886 2N5883 2N5884 2N5885 2N5886 2N5884

    2N5886G

    Abstract: 2N5886 2N5885G IB 115 2N5883 2N5884 2N5883G 2N5884G 2N5885 2N5984
    Text: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features


    Original     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA O-204AA 2N5886G 2N5885G IB 115 2N5883 2N5883G 2N5884G 2N5885 2N5984

    2SA1046

    Abstract: BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc


    Original     		PDF 2N5883 2N5884* 2N5885 2N5886* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA1046 BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement

    2N5883

    Abstract: 2N5884 2N5885 2N5886
    Text: SavantIC Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications


    Original     		PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886

    2N5984

    Abstract: 2N5886 2N5883 2N5884 2N5885
    Text: PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. http://onsemi.com • Low Collector–Emitter Saturation Voltage – 25 AMPERE COMPLEMENTARY


    Original     		PDF 2N5883, 2N5884* 2N5885, 2N5886* r14525 2N5883/D 2N5984 2N5886 2N5883 2N5884 2N5885

    2N5886

    Abstract: 2N5885 2N5883 2N5884
    Text: Product Specification www.jmnic.com 2N5885 2N5886 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5883 2N5884 APPLICATIONS ・They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION


    Original     		PDF 2N5885 2N5886 2N5883 2N5884 2N5885 2N5886 2N5884

    2N5883

    Abstract: 2N5884 2N5885 2N5886
    Text: Product Specification www.jmnic.com 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5885 2N5886 APPLICATIONS ・They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION


    Original     		PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886

    2N5885

    Abstract: 2N5886 2N5884 2N5883 transistor 2N5884 P003N
    Text: 2N5883/2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case inteded for use in power linear


    Original     		PDF 2N5883/2N5885 2N5884/2N5886 2N5884, 2N5885 2N5886 2N5883 2N5884 2N5883 transistor 2N5884 P003N

    2N5883

    Abstract: 2n5885
    Text: Complementary Silicon High-Power Transistors PNP 2N5883 2N5884* . . . designed for general–purpose power amplifier and switching applications. NPN 2N5885 2N5886* • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc


    Original     		PDF 2N5883 2N5884* 2N5885 2N5886* r14525 2N5883/D

    2N5885

    Abstract: 2N 5883 2n 5886
    Text: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current


    OCR Scan     		PDF 2N5885, 2N5886 90-mJ 2N5885 2N5885 2N 5883 2n 5886

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON Rf¡lD E[3 i[LiOT[3(s iD(Ei 2N5883/2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 are silicon epitaxial-base NPN power transistor in Jedec


    OCR Scan     		PDF 2N5883/2N5885 2N5884/2N5886 2N5884, 2N5885 2N5886 2N5885 2N5886 2N5883 2N5884 2N5883/2N5884/2N5885/2N5886

    2N5886

    Abstract: 2N5883 2N5884 2N5885 S200 40 amp collector current CWB-10
    Text: 2N5883, 2N5884 PNP I 2N5885, 2N5886 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) 2N5883, 2N5885 2N5884, 2N5886


    OCR Scan     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5885 2N5884, 2N5886 2N5885 2N5883 S200 40 amp collector current CWB-10

    BUT36

    Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts


    OCR Scan     		PDF BUT36 2N5885 2N5883 2N5886 2N5884 2N6436 2N6338 2N6437 2N6339 2N6438 BUT36 BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


    OCR Scan     		PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    2N2820

    Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340
    Text: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je|WsÍ1mD53iT D | CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63


    OCR Scan     		PDF 000D53J 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6320 2N6339 2N6340

    2N5886

    Abstract: 2n5884 2N5883
    Text: MOTOROLA O rder this docum ent by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low C ollector-Em itter Saturation Voltage —


    OCR Scan     		PDF 2N5883/D 2N5883 2N5884* 2N5885 2N5886* O-204AA 2N5886 2n5884

    5886

    Abstract: No abstract text available
    Text: File N um ber 1041 2N5885, 2N5886 High-Current, High Power, High-Speed N-P-N Power Transistors TERMINAL DESIGNATIONS Features: • Specification fo r h rt and I ' c e [saf] up to 25 A m C urrent gain bandw idth p roduct fT = 4 MHz [m in.] at 1 A m Low saturation voltage with high beta


    OCR Scan     		PDF 2N5885, 2N5886 O-204AA 2N5885 2N5886 9ZCS-2980Î 5886

    2N6886

    Abstract: 2N5984 transistor 2N5884 2N5883 2N5885 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low Collector-Emitter Saturation Voltage —


    OCR Scan     		PDF 2N5883 2N5884* 2N5885 2N5886* 2NS884 2NS886 2N5884 2N6886 2N5984 transistor 2N5884 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S