2N635 Search Results

2N6359

Contextual Info: JMnic Product Specification 2N6359 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain ・Excellent safe operating area APPLICATIONS ・Designed for high power applications and switching circuits such as relay

2N6353

Abstract: 2n6351 RB1-E
Contextual Info: SÖE D TELED YN E COMPONENTS ö*il7bC15 üDQtiS42 t. T -3 3 -a 7 NPN POWER DARLINGTON 5AMP SWITCHING TRANSISTORS 2N6350 thru 2N6353 GEOMETRY 508 • KD5A • LowVCE Sat • High Gain TO-33 • Monolithic Construction MAXIMUM RATINGS SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT

2N6355

Contextual Info: SavantIC Semiconductor Product Specification 2N6355 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION

BUW23

Contextual Info: M U L T IE P IT A X IA L P LAN A R - TO -3 c o n tin u e d NPN BUX41 , BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 ' to« Vcio (V) Veto (V) lc (*) P» (W) 250 220 300 150 120 120 150 120 150 150 150 200 160 250 90 75 90 120 90 120

Contextual Info: 2N6353 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k

Contextual Info: 2N6352+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k

2N6351

Contextual Info: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33

Contextual Info: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-213AA

2N6350

Abstract: 2N6350 equivalent
Contextual Info: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33

Contextual Info: 2N635 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.

Contextual Info: o H DA RLIN GTON O flffcil « M t l t t O T O N M W PACKAGE ec TO-33 < û F-24 TO-21 3/TO-66 TO-204/TO-3 PACKAGE TO-21 3/TO-66 k V O LT S 2N635Q" 2M6351“ *C @ *6 A A 1.0/5.0 1.5 5.0/0.005 1000 1.0/5.0 1.5 5.0/0.01 *C @ V C E A V ^ C E s a t m ax V O LT S

TO-213

Abstract: 2N6297 WF24 2N6351
Contextual Info: A POW ERHOUSE BIPOLAR TO-33 w b v CEO VOLTS PEAK >C AMPS hFE min/max < < o m D E /ICE TYPE PACKAGE o N PN D A R L IN G T O N POW ER T R A N S IS T O R S VCE sat max VOLTS •c @ !b A A 2N6350* 80 5.0 2000 1.0/5.0 1.5 5.0/0.005 2N6351* 150 5.0 1000 1.0/5.0

2N6354

Contextual Info: JMnic Product Specification 2N6354 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Fast switching speed ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・For switching applications in military

2N6358

Contextual Info: JMnic Product Specification 2N6358 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2

Contextual Info: 2N6353+JANTXV Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k

2N6351

Contextual Info: 2N6351+JANTXV Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k

Contextual Info: 2N6352+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k

Contextual Info: 2N6351+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k

Contextual Info: 2N6353+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k

Contextual Info: 2N6350+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k

2N6354

Contextual Info: SavantIC Semiconductor Product Specification 2N6354 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Excellent safe operating area ·Fast switching speed ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For switching applications in military

2n6356

Contextual Info: SavantIC Semiconductor Product Specification 2N6356 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION

2N6354

Abstract: 2NG354 2N6496 2ng3 150V15
Contextual Info: 2N6354 2 N6496 POWER TRANSISTORS 20 Amp, 150 V, Double Diffused NPN Mesa FEATURES DESCRIPTION • • • • These double diffused glass passivated mesa power transistors combine fastswitching, low saturation voltage and rugged Es/b capability. They are de­

2N6226

Abstract: 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385
Contextual Info: A P I E LECTRONICS INC 0043592 Ëb A P I ELECTRONICS DE INC I DÜMBSTE 26C.00Z31 DDDD231 □ »T-BS-il CONTINUED D ev ice No C a se 2N6262 2N6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 T O -3 T O -3 T O -3