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    2N6373 Search Results

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    2N6373 Price and Stock

    Microchip Technology Inc 2N6373

    TRANS PNP 60V 6A TO66
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    Microchip Technology Inc 2N6373 1
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    Onlinecomponents.com 2N6373
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    NAC 2N6373 Tray 5
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    Master Electronics 2N6373
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    Central Semiconductor Corp 2N6373

    Complementary Silicon Power Transistor PNP 60V 6A 2-Pin TO-66 (Alt: 2N6373)
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    Central Semiconductor Corp 2N6373 PBFREE

    Transistor GP BJT NPN 60V 6A 2-Pin TO-66 Sleeve (Alt: 2N6373 PBFREE)
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    Central Semiconductor Corp 2N6373 TIN/LEAD

    Transistor GP BJT NPN 60V 6A 2-Pin TO-66 Sleeve (Alt: 2N6373 TIN/LEAD)
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    Semiconductors 2N6373

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    2N6373 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6373 Central Semiconductor Complementary Silicon Power Transistor Original PDF
    2N6373 Central Semiconductor Power Transistors Original PDF
    2N6373 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=40 / Ic=6 / Hfe=20/100 / fT(Hz)=4M / Pwr(W)=23 Original PDF
    2N6373 API Electronics Short form transistor data Short Form PDF
    2N6373 API Electronics Transistor Selection Guide Scan PDF
    2N6373 Central Semiconductor Silicon NPN Transistor Scan PDF
    2N6373 Diode Transistor Transistors Scan PDF
    2N6373 General Transistor Power Transistor Selection Guide Scan PDF
    2N6373 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6373 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6373 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6373 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6373 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6373 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6373 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6373 Unknown Transistor Replacements Scan PDF
    2N6373 Unknown Transistor Replacements Scan PDF
    2N6373 Unknown Transistor Replacements Scan PDF
    2N6373 New England Semiconductor BIPOLAR NPN TRANSISTOR TO-66 Scan PDF
    2N6373 New England Semiconductor NPN TO-66 Transistor Scan PDF

    2N6373 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5955

    Abstract: 2N5954 2N5956 2N6374 2N6372 2N6373
    Text: Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ・Designed for driver circuits,switching


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    PDF 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 2N5954 2N5955 2N5956 2N6374

    2N6372

    Abstract: 2N6373 2N6374
    Text: SavantIC Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wide-band amplifier applications


    Original
    PDF 2N6372 2N6373 2N6374 2N6372 2N6373 2N6374

    2N6373

    Abstract: No abstract text available
    Text: 2N6373 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N6373 O213AA) 1-Aug-02 2N6373

    2N6374

    Abstract: 2N6372 2N6373
    Text: Inchange Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for switching and wide-band amplifier applications


    Original
    PDF 2N6372 2N6373 2N6374 2N6372 2N6373 2N6374

    2N5954

    Abstract: 2N5956 2N5955 2N6372 2N6373 2N6374
    Text: 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 SERIES types are complementary Silicon Power Transistors manufactured by the epitaxial base


    Original
    PDF 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 300mA 24-November 2N5956 2N6374

    Untitled

    Abstract: No abstract text available
    Text: 2N6373 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N6373 O213AA) 30-Jul-02

    2N6372

    Abstract: 2N6373 2N6374
    Text: JMnic Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for switching and wide-band amplifier applications


    Original
    PDF 2N6372 2N6373 2N6374 2N6372 2N6373 2N6374

    2n6373

    Abstract: 2N5954
    Text: 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 series devices are complementary silicon power transistors manufactured by the epitaxial base process,


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    PDF 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 2N6372 300mA

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Delco

    Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
    Text: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -


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    PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    23581 i c

    Abstract: ax 23581 ax 23581 i c
    Text: Microsemi NPN Transistors Part Number NPN 2N5051 2N5052 TIP31 TIP31A TIP31B TIP31C 2N5074 2N5075 2N5076 2N5077 2N6121 2N6122 2N6465 2N6466 2N6474 2N6374 2N6373 2N6372 2N6288 2N6290 2N6292 2N5427 2N5428 2N5429 2N5430 2N6078 2N6077 2N6079 2N5730 TIP110 TIP111


    OCR Scan
    PDF T0-220 O-220 23581 i c ax 23581 ax 23581 i c

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135


    OCR Scan
    PDF 0000SS7 AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088

    X9116WM8I-2.7T1

    Abstract: 2N6315
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 Vceo Ic sus (max) VOLTS AMPS ^FE IC/ Vce (min/max @ A/V) fx (MHz) l@.5/.05 75 3 1 40-200@.5/10 5@1/.125 35 10 300h 5 25-100@1/10 .75@1/.125 35 10 2N3585A 400h 5 25-100@1/10 .75@1/.125 35 10 2N3738


    OCR Scan
    PDF 2N3054A 2N3583 2N3584A 2N3585A 2N3738 2N3739A 2N3766A 2N3767A 2N3878 2N3879A X9116WM8I-2.7T1 2N6315

    2N6315

    Abstract: 2n3054a
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 PA C K A G E D E V IC E T Y PE ^C E O sus V O LTS Ic (m ax) AM PS NPN TO-66 2N 3054A 55 4 25-100@ .5/4 2N3583 250h 1 2N 3584 300h 2N 3585 hfE@ i< y v Ce (m in/m ax @ A/V) ^CE<s»l) Pr D * W A TTS fr


    OCR Scan
    PDF 2N3583 2N4911 2N5661 2N5665 2N6315 2N6373 2N6315 2n3054a

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


    OCR Scan
    PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan
    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C