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Central Semiconductor Corp 2N6468 TRANS 120V 4A TO66
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DigiKey	2N6468	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Central Semiconductor Corp 2N6467 TRANS 100V 4A TO66
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DigiKey	2N6467	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Central Semiconductor Corp 2N6468 TIN/LEAD Transistor GP BJT PNP 120V 2-Pin TO-66 Sleeve (Alt: 2N6468 TIN/LEAD)
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Avnet Americas	2N6468 TIN/LEAD			111 Weeks	60	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp 2N6465 TIN/LEAD Transistor GP BJT NPN 100V 2-Pin TO-66 Sleeve (Alt: 2N6465 TIN/LEAD)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N6465 TIN/LEAD			111 Weeks	60	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp 2N6466 TIN/LEAD Transistor GP BJT NPN 120V 2-Pin TO-66 Sleeve (Alt: 2N6466 TIN/LEAD)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N6466 TIN/LEAD			111 Weeks	60	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N646 Datasheets (116)

Part	Manufacturer	Description	Datasheet Type	PDF
2N646	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N646	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N646	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N646	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N646	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N646	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
2N646	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N6460	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N6460	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N6460	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6460	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6460	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N6460	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
2N6461	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=300 / Ic=0.1 / Hfe=30-120 / fT(Hz)=200M / Pwr(W)=1	Original	PDF

2N6461	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N6461	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N6461	Unknown	Transistor Replacements	Scan	PDF
2N6461	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6461	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6461	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

2N646 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6465 Abstract: npn 100v 1.5a 2N6466 2N6467 2N6468 2N646 v130100 Contextual Info: Inchange Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6467 2N6468 APPLICATIONS ・For use in audio amplifier applications PINNING see Fig.2	Original	2N6465 2N6466 2N6467 2N6468 2N6465 npn 100v 1.5a 2N6466 2N6468 2N646 v130100	PDF
2N6465 Contextual Info: 2N6465 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2N6465 O213AA) 1-Aug-02 2N6465	PDF
TA8724 Abstract: 2N6248 transistor 2n6246 2N6469 Contextual Info: 2N6246, 2N6247, 2N6248, 2N6469 H A RR IS S E M I C O N D S E C T O R File N u m b e r SbE D 677 I 430 2 57 1 0 0 4 0 5 2 0 3T3 « H A S Silicon P-N-P Epitaxiai-Base, High-Power Transistors TERMINAL DESIGNATIONS General-Purpose Types of Switching and Linear-Amplifier Applications	OCR Scan	2N6246, 2N6247, 2N6248, 2N6469 O-204AA 2N6246 2N6469 P-6019 TA8724 2N6248 transistor 2n6246	PDF
2N6463 Contextual Info: 2N6463 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)	Original	2N6463 O205AD) 10/20m 1-Aug-02 2N6463	PDF
40411 transistor Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39 Contextual Info: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66	OCR Scan	2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39	PDF
Contextual Info: 2N6463 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)	Original	2N6463 O205AD) 10/20m 19-Jun-02	PDF
Contextual Info: 2N6462 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)	Original	2N6462 O205AD) 10/20m 19-Jun-02	PDF
Contextual Info: 2N6467 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6467 O213AA) 30-Jul-02	PDF
Contextual Info: 2N6463 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)20m	Original	2N6463 Freq70M	PDF
Contextual Info: 2N6464 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)20m	Original	2N6464 Freq70M	PDF
Contextual Info: 2N6461 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)1.1 @I(C) (A) (Test Condition)20m	Original	2N6461 Freq70M	PDF
Contextual Info: 2N646 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2N646	PDF
2n6462 Abstract: 2N6461 Contextual Info: TYPES 2N6461 THRU 2N6464 N-P-N SILICON TRANSISTORS B U L L E T IN NO. D L S 7312012, M A Y 1973 H IG H -V O L T A G E 10-WATT T R A N S IS T O R S FO R G E N E R A L PURPOSE A M P L IF IE R A P P L IC A T IO N S IN L IN E -O P E R A T E D C IR C U IT S •	OCR Scan	2N6461 2N6464 10-WATT 2n6462	PDF
2N6468 Contextual Info: 2N6468 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6468 O213AA) 1-Aug-02 2N6468	PDF

FA 23843 Abstract: 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919 Contextual Info: Micmsemi PNP Transistors Part Number PNP 2N5312 2N586S 2N5677 2N5737 2N5316 2N5318 2NS738 2N5314 2NS872 2N6318 2N5007 2N5009 2N6594 2N5741 2N5742 2N5871 2N6317 2N5853 2N7369 2N5621 2N5623 2N5625 2N5290 2N5291 2N5627 2N6127 2N6246 2N6469 2N6247 2N6248 2N6226	OCR Scan	O-254 PNP-10 FA 23843 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919	PDF
2N6468 Abstract: TA8709 Contextual Info: File N um ber HARRIS 888 SENICOND 2N6467, 2N6468 SECTOR SLE T> Silicon P-N-P Medium-Power Transistors 4302571 0 0 4 0 S57 M'ÎS M Ê H A S TERMINAL DESIGNATIONS General-Purpose Types for Switching Application Features: • Low saturation voltages ■ Maximum-safe-area-of-operation curves	OCR Scan	2N6467, 2N6468 O-213AA TA8710, TA8709, 2N6467 2N6468 2N6468. TA8709	PDF
Contextual Info: 2N6469 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W)71# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15	Original	2N6469 Freq10M	PDF
Contextual Info: 2N6466 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)130 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)23 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)4.0	Original	2N6466	PDF
Contextual Info: 2N6467 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)23 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)4.0	Original	2N6467	PDF
Contextual Info: 2N6462 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)1.1 @I(C) (A) (Test Condition)20m	Original	2N6462 Freq70M	PDF
Contextual Info: 2N6465 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2N6465 O213AA) 30-Jul-02	PDF
2N6469 Contextual Info: SavantIC Semiconductor Product Specification 2N6469 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose of switching and	Original	2N6469 2N6469	PDF
2N6469 Contextual Info: 2N6469 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N6469 O204AA) 31-Jul-02 2N6469	PDF
2N6464 Contextual Info: 2N6464 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)	Original	2N6464 O205AD) 10/20m 1-Aug-02 2N6464	PDF

2N646 Search Results

2N646 Price and Stock

Central Semiconductor Corp 2N6468

Central Semiconductor Corp 2N6467

Central Semiconductor Corp 2N6468 TIN/LEAD

Central Semiconductor Corp 2N6465 TIN/LEAD

Central Semiconductor Corp 2N6466 TIN/LEAD

2N646 Datasheets (116)

2N646 Datasheets Context Search

2N6465

2N6465

TA8724

2N6463

40411 transistor

2n6462

2N6468

FA 23843

2N6468

2N6469

2N6469

2N6464