2N648 Search Results

2N6488G

Contextual Info: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

2N6490

Abstract: 2N6487
Contextual Info: Product Specification www.jmnic.com 2N6487 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2N6490 APPLICATIONS ・It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION

2N6485

Abstract: 2N6483 X2N6485 2n6485 equivalent 2N64 U401
Contextual Info: _CQIOylC _| _ Dual N-Channel JFET Low Noise Amplifier CORPORATION 2N6483 - 2N6485 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • Ultra Low Noise High CMRR Low Offset Tight Tracking Gate-Source or Gate-Drain Voltage (Note 1) .-50V

2N6491

Abstract: 2N6488 2N6489 2N6490 2N6486 2N6487 N648 407f N6486
Contextual Info: Æ & M O S P E C COMPLEMENTARY SILICON PLASTIC PNP 2N6489 2N6490 2N6491 NPN 2N6486 2N6487 2N6488 POWER TRANSISTORS . designed for use in general-purpose amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining VoltageV c e o s u s = 40 v Min) -2N6486, 2N6489

2N6488 MOTOROLA

Abstract: 2N6487 1N5825 2N6488 2N6490 2N6491 MSD6100
Contextual Info: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488 * PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes —

MIL I 23659

Abstract: 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405
Contextual Info: Microsemi PNP Transistors TIP42 TIP42A TIP42B TIP42C 2N6666 2N6667 2N6668 2N3171 2N3172 2N3173 2N3174 2N6049 2N3183 2N3195 2N3184 2N3196 2N3185 2N3197 2N3186 2N3198 2N6040 2N6041 2N6042 2N6489 2N6490 2N6491 2N3163 2N3164 2N3165 2N3166 2N3175 2N3187 2N317B

Contextual Info: 2N6482 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80º V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)67 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.300

2N6480

Contextual Info: 2N6480 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)50# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.20 h(FE) Max. Current gain.300

Contextual Info: 2N6487, 2N6488 NPN , 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • • • • 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Contextual Info: 2N6489 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15

Contextual Info: 2N6487 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15

2N6488G

Abstract: 2N6491 power circuit other part number 1N5825 2N6487 2N6487G 2N6488 2N6490 2N6490G 2N6491 MSD6100
Contextual Info: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) 2N6488 and 2N6491 are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE

2N6488

Abstract: 2N6491
Contextual Info: Product Specification www.jmnic.com 2N6488 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2N6491 APPLICATIONS ・It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION

2N6487

Abstract: 2N6490
Contextual Info: Product Specification www.jmnic.com 2N6490 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2N6487 APPLICATIONS ・It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION

mj2955 TO-220

Abstract: 2N3055 TO-220 MJ2955 BDX54S BDX18 2N3055 TO-3 4116-4 bdw21 BDX88b crimson 5110
Contextual Info: CRIMSON SEM IC ONDUC TO R INC d F | asm C H b 2514096 CRIMSON SEMICONDUCTOR 99D 00 33 4 INC D 7 EPITAXIAL BASE - TO -220 continued I ' j " NPN PNP TIP121 TIP122 TIP130 TIP131 TIP132 2N6121 2N6122 2N6123 2N6288 2N6290 2N6292 2N6386 2N6387 2N6388 2N6486 2N6487

2N6488 MOTOROLA

Abstract: 2N6491 MOTOROLA 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100
Contextual Info: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes —

2N6486

Abstract: 2N6487 2N6488 2N6489 2N6490 2N6491 6488 356HF
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 2N6489, 6490, 6491

2N6488

Abstract: 2N6486 2N6487 2N6489 2N6490 2N6491
Contextual Info: SavantIC Semiconductor Product Specification 2N6486 2N6487 2N6488 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Excellent safe operating area ·Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS ·Power amplifier and medium speed

mbd5300

Abstract: mbd-5300 2N6487 MSD6100
Contextual Info: 2N6487 NPH POWER TRANSISTORS 60 VOLTS 15 AMP, 75 WATTS These are designed for use in general-purpose amplifier and switching applications. NPN COLLECTOR Features: • DC Current Gain specified to 15 Amperes hFE = 20-150 @ IQ = 5.0 A = 5.0 Min @ lc = 15 A

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 2N6489, 6490, 6491 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS

2n6489

Abstract: 2N6488 power amplifier circuit
Contextual Info: 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 HARRI S SEniCOND SECTOR SbE D • File Number 4302271 üü40Sbb 678 4Tfl H H A S 15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors Complementary Pairs for General-Purpose Switching and Amplifier Applications

2N6486

Abstract: 2n6489 2n6491
Contextual Info: 2N6486/87/88 2N6489/90/91 COMPLEMENTARY SILICON POWER TRANSISTORS n 2N6487, 2N6488, 2N6489 AND 2N6490 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N6486, 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package.

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

1N5825

Abstract: 2N6487 2N6488 2N6490 2N6491 MSD6100
Contextual Info: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general–purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20–150 @ IC = 5.0 Adc