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    Microchip Technology Inc 2N6537

    TRANSISTOR POWER BJT
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    2N6537 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6537 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=120 / Ic=8 / Hfe=100-5k / fT(Hz)=20M / Pwr(W)=14 Original PDF
    2N6537 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6537 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6537 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6537 Unknown Transistor Replacements Scan PDF
    2N6537 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6537 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6537 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6537 RCA Solid State Product Guide 1979 Scan PDF
    2N6537 RCA Solid State Power Transistor Directory 1976 Scan PDF

    2N6537 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6537

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6537 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING See Fig.2 PIN DESCRIPTION


    Original     		PDF 2N6537 2N6537

    Untitled

    Abstract: No abstract text available
    Text: E.m.L-donaiicto'i ^Pioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistors 2N6537 DESCRIPTION With TO-66 package •DARLINGTON APPLICATIONS •Power switching


    Original     		PDF 2N6537

    2N6537

    Abstract: No abstract text available
    Text: 2N6537 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N6537 O213AA) 1-Aug-02 2N6537

    2N6537

    Abstract: No abstract text available
    Text: JMnic Product Specification 2N6537 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON APPLICATIONS ・Power switching ・Hammer drivers ・Series and shunt regulators ・Audio amplifiers PINNING See Fig.2 PIN DESCRIPTION 1 Base


    Original     		PDF 2N6537 2N6537

    Untitled

    Abstract: No abstract text available
    Text: 2N6537 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N6537 O213AA) 30-Jul-02

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original     		PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    TIS84

    Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
    Text: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125


    Original     		PDF TIP539 O-204AA/TO-3: TIP540 TIP54 O-218 TIP544 TIS84 TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2SC2625

    Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
    Text: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300


    Original     		PDF 2C5000 2N2453DIE 2C2453 2N3807DIE 2C3807 2N6287DIE 2C6287 2N6295DIE 2C6295 2SC2625 power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600

    40349

    Abstract: darlington 2N6534 2N6535 2N6536 2N6537 BDX33 BDX34 BDX34A BDX34B
    Text: 2N6537 FAM ILY [N-P-N] silicon P j = 36 W Gain Bandwith = 20 MHz @ 1 MHz Darlington TO-66 80 80 80 1000-10,000 5 2N6535 Darlington TO-66 100 100 100 1000-10,000 3 3 3 2N6536 2N6537 Darlington TO-66 100 120 100 100 1000-10,000 120 120 1000-10,000 5 3 3 3


    OCR Scan     		PDF 2N6537 2N6534 2N6535 2N6536 BDX33 BDX34 O-220 BDX34C TQ-220 40349 darlington BDX34A BDX34B

    Untitled

    Abstract: No abstract text available
    Text: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542


    OCR Scan     		PDF 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462

    RCA 40872

    Abstract: rca 40872 transistor RCA 40595 transistor RCA 40594 transistor rca 40871 transistor 40872 rca rca 40636 RCA 40636 transistor RCA 40360 rca 40594
    Text: MONOLITHIC DARLINGTON TYPES HERM ETIC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 PLASTIC l t z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. Py ■ 100 W max. (TO-3) lc •= - 1 0 A max. PT - 100 W max.


    OCR Scan     		PDF Pj-36W ITO-66) 136x136 2N6337 2N6534 2N6535 2N6536 2N6537 2N6385 RCA 40872 rca 40872 transistor RCA 40595 transistor RCA 40594 transistor rca 40871 transistor 40872 rca rca 40636 RCA 40636 transistor RCA 40360 rca 40594

    TRANSISTOR C 6090 npn

    Abstract: RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
    Text: lc sat Features •Excellent switching performance at high volt­ age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in­ cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design


    OCR Scan     		PDF O-22Q RCS683 2N6537 2N6530 2N6388 2N6666 2N6650 RCA8766 2N6284 2N6287 TRANSISTOR C 6090 npn RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415

    rca8203a

    Abstract: RCA8350B 2N6534 2N6055 2N6056 2N6337 2N6383 2N6385 2N6535 2N6536
    Text: MONOLITHIC DARLINGTON TYPES H E R M E T IC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 P L A S T IC 1 = 10A max. c PT = 70W max. l = 10 A mox. c P^ = 70W max. VERSAWATT (T 0 -2 2 0 ) VERSAWATT (T O -220)


    OCR Scan     		PDF Pj-36W ITO-66) 136x136 2N6337 2N6534 2N6535 2N6536 2N6537 2N6385 rca8203a RCA8350B 2N6534 2N6055 2N6056 2N6337 2N6383 2N6385 2N6535 2N6536

    40411 transistor

    Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
    Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66


    OCR Scan     		PDF 2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    RCA 40872

    Abstract: RCA 40636 transistor rca 40872 transistor 40872 transistor NPN Transistor 2N3055 darlington RCA 40595 transistor 40872 rca rca 40636 rca8203a 40636
    Text: M O N O LITH IC D A R LIN G TO N T Y P E S H E R M E T IC lc • 8 A max. P j - 3 6 W max. TO-66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 P L A S T IC lt z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. P y ■ 100 W max. (TO-3) lc •= - 1 0 A max.


    OCR Scan     		PDF Pj-36W ITO-66) 136x136 2N6337 2N6534 2N6535 2N6536 2N6537 2N6385 RCA 40872 RCA 40636 transistor rca 40872 transistor 40872 transistor NPN Transistor 2N3055 darlington RCA 40595 transistor 40872 rca rca 40636 rca8203a 40636

    40349

    Abstract: rca8203a 2N6534 rca 610 RCA8203B RCA8350 2N6055 2N6056 2N6337 2N6383
    Text: MONOLITHIC DARLINGTON TYPES HERM ETIC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 PLASTIC l t z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. Py ■ 100 W max. (TO-3) lc •= - 1 0 A max. PT - 100 W max.


    OCR Scan     		PDF Pj-36W ITO-66) 136x136 2N6337 2N6534 2N6535 2N6536 2N6537 2N6385 40349 rca8203a 2N6534 rca 610 RCA8203B RCA8350 2N6055 2N6056 2N6337 2N6383

    5005K

    Abstract: 2N6575 2N6587 2N65 2N6395 2N6534 2N6583 NPN 1K 2N6385 2N6394
    Text: 4flE D • Ö1331Ö7 0000444 SEMELABL 1TS ■ S M L B S E M E L A B LT3> 7^;.«/ HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Num ber Rei Code 2N6385 2N6394 2N6395 2N6408 2N6414 2N6420 2N6421 2N6422 2N6423 2N6424 2N6425 2N6436 2N6437


    OCR Scan     		PDF 2N6385 lk-20k 2N6394 750-18k 2N6395 2N6408 2N6414 2N6420 10min 5005K 2N6575 2N6587 2N65 2N6534 2N6583 NPN 1K

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N6531B

    Abstract: 2N660 2N6587 2N6558S 2N6584
    Text: r S E ME L AB 37E LTD IVIELABil Type No. 2N6497 2N6498 2N6499 2N6500 • 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 op tion "1^ Polarlty HI-REL SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN Packa3e VCEO •c cont J> m V' 'Xg. - 6133167 □ □ 0 D D E ci 4


    OCR Scan     		PDF 2N6497 2N6498 2N6499 2N6500 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 2N660 2N6587 2N6558S 2N6584

    rca8203a

    Abstract: qdsp-u238 RCA8203B 2n6387 rca rca 610 RCA8350 RCA8350A RCA8350B 2N6055 2N6056
    Text: MONOLITHIC DARLINGTON TYPES HERM ETIC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 PLASTIC l t z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. Py ■ 100 W max. (TO-3) lc •= - 1 0 A max. PT - 100 W max.


    OCR Scan     		PDF Pj-36W ITO-66) 136x136 2N6337 2N6534 2N6535 2N6536 2N6537 2N6385 rca8203a qdsp-u238 RCA8203B 2n6387 rca rca 610 RCA8350 RCA8350A RCA8350B 2N6055 2N6056

    8203A

    Abstract: 8203B 2n6387 rca 8350a 2N6385 RCA 8350B rca8203a 2N6383 RCA rca 610 darlington npn rca
    Text: MONOLITHIC DARLINGTON TYPES HERM ETIC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 PLASTIC l t z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. Py ■ 100 W max. (TO-3) lc •= - 1 0 A max. PT - 100 W max.


    OCR Scan     		PDF Pj-36W ITO-66) 136x136 2N6337 2N6534 2N6535 2N6536 2N6537 2N6385 8203A 8203B 2n6387 rca 8350a 2N6385 RCA 8350B rca8203a 2N6383 RCA rca 610 darlington npn rca

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931