2N6424 Search Results

2SA1402E

Abstract: 2SC2224 2SA1371E
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425

Contextual Info: 2N6424 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

5005K

Abstract: 2N6575 2N6587 2N65 2N6395 2N6534 2N6583 NPN 1K 2N6385 2N6394
Contextual Info: 4flE D • Ö1331Ö7 0000444 SEMELABL 1TS ■ S M L B S E M E L A B LT3> 7^;.«/ HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Num ber Rei Code 2N6385 2N6394 2N6395 2N6408 2N6414 2N6420 2N6421 2N6422 2N6423 2N6424 2N6425 2N6436 2N6437

2N6424

Contextual Info: 2N6424 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

Contextual Info: 2N6424 2N6425 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6424 and 2N6425 are silicon PNP power transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER

Contextual Info: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N3738 equivalent

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

SCR 2N6399

Abstract: 2N6424 2N6399 2N6407 2N63 2N6384 2N6385 2N6386 2N6387 2N6388
Contextual Info: SEMELAB LTD Type N°. 37E » Option"^ Po,ari,V Package VCEO fil33ia? QGOOOSfl 2 • S M L B ^ nJ hr e < VCE/'C PD 2N6384 2N6385 2N6386 2N6387 2N6388 SCREEN SCREEN NPN NPN NPN NPN NPN 103 T03 T0220 10220 T0220 60 80 40 60 80 10 10 8 10 10 lk-20k lk-20k lk-20k

2N3741 MOTOROLA

Abstract: 2N3585 MOTOROLA 2N3766 MOTOROLA 2N3583 MOTOROLA 2n6299 motorola 2N4900 MOTOROLA 2N6424 2n3584 motorola 2N6424 MOTOROLA 2N4910
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL continued TO-66 Package CASE 80-02 STYLE 1: PIN 1. 2. CASE. BASE EMITTER COLLECTOR Resistive Switching lcCont V c E O (SUB) Amps Max Volts Min 1 Device Type NPN PNP Am p Min @ 25°C 3 25 20/100 0.5 0.6 typ 0.3 typ 0.5

STI3009

Abstract: ESM3004 STIP8006 ESM3002 2SA1227AP STIP-8006 TRS-500 STI-3005 ESM3001 2SC3676
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) Po Max h re *T ON) Min (Hz) r ICBO (CE)sat Max Max (A) (8) Max (Ohms) T Op«r Package Style Max (°C) D vices 20 Watts or More, (Cont'd) 5 10 HSE830 BUW49 BUW49 SS2007

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

JANS2N3741

Abstract: ne 545 d
Contextual Info: Microsemi PNP Transistors : P a cka g e O u tlin e M il i Data Spec Sheet : ID PD iC V c b o V c e o V e b o V C E sat @ IC <w> (A) (V) (V) (V) (V) (m A ) HFE m in (dB ) -5 100 80 5.5 1.5 2.5 70 200 23776 11.8 11.8 -5 100 80 5.5 1.5 2.5 30 90 545 23781 11.8

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N5428

Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2N8261

Contextual Info: Power Transistors TO-66 Case TYPE NO. te A NPN PNP 2N3054 Pd (W) MAX bvcbo hFE (V) b v CEO (V) MIN MIN MIN MAX le (A) VCE(SAT) Iß (A) (V) MAX (MHz) MIN 4.0 25 90 55 25 150 0.5 1.0 0.5 0.8 2N3054A 2N6049 4.0 75 90 55 25 150 0.5 0.5 0.5 0.8 2N3583 2N6420

2N3738

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3736 2N6049 2N6420 2N6421 2N6422
Contextual Info: Power Transistors a v ii -j K Jy a TO-66 Case TYPE NO. •c A PNP NPN 2N3054 Pd (W) bvc b o bvceo (V) (V) ie (A) hFE VCE(SAT) ® «e (V) (A) MIN MIN MIN MAX 4 .0 25 90 55 25 1 50 0 .5 1.0 0 .5 0 .8 0.8 MAX MAX h {MHz) MIN 2N 3054A 2N6049 4 .0 75 90 55

STI-3007

Abstract: STI-3007 A STI3007 2N546b SE7020 2N3583 2N3584 2N3738 2N3739 2N4296
Contextual Info: SE MICO ND UC TO R TECHNOLOGY OSE D I fl13b 4 Sfl 00□0221 1 1 SEMICONDUCTOR TECHNOLOGY, INC. ^ L l l i L y N J ; U L HIGH VOLTAGE SILICON MEDIUM POWER TRANSISTORS • -r ' w oO -n/ g 0, 0H c c , ct t J 3131 S.E. Jay Street " Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511

2N6424

Abstract: 2N6226 2N6382 2N6213 2N6214 2N6227 2N6228 2N6229 2N6230 2N6231
Contextual Info: Cip Il PNP D E V IC E PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREE A K D O V V N V O LTAG E S SAT. V O L T A G E S M . ax. h f :E ! VCE 'c 'b VCE V BE (V) (A) M in. M ax. (A) (A) (V) (V) 6 4 1 10 100 1 0.125 2 1 400 6 5 1 10 100 1 0.125 0.5 1 100

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK