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    Keysight Technologies N6708A

    Racks & Rack Cabinet Accessories Filler Panel Kit for Low-Profile Modular Power System Mainframes - 3 panels
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    2N6708 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6708 Continental Device India PNP SILICON PLANAR EPITAXIAL TRANSISTOR Original PDF
    2N6708 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    2N6708 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6708 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6708 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6708 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6708 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6708 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6708 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6708 National Semiconductor PNP Medium Power Transistors Scan PDF
    2N6708 National Semiconductor PNP Transistors Scan PDF
    2N6708 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF

    2N6708 Datasheets Context Search

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    2N6708

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6708 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


    Original
    PDF ISO/TS16949 2N6708 O-237 C-120 2N6708

    2N6708

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6708 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC


    Original
    PDF 2N6708 O-237 C-120 2N6708

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6708 PNP SILICON PLANAR EPITAXIAL TRANSISTOR This Device was Designed for General Purpose Medium Power Amplifier.


    Original
    PDF O-237 2N6708 C-120

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original
    PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original
    PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    transistor 237

    Abstract: 2N6708 2N6709 2N6710 2N6726 2N6727 2N6728 2N6729 2N6730 2N6732
    Text: TO-237 Plastic Package Transistors PNP Maximum Ratings Type No. 2N6708 2N6709 2N6710 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Y cbo V CEO ^EBO (V) Min (V) Min (V) Min (W) @Tc=25”c (A) 60 45 5 0.75 1.5 80 100 60 80 5 5 0.75 0.75


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    PDF O-237 2N6708 O-237-1 2N6709 2N6710 2N6726 CIL916LA transistor 237 2N6727 2N6728 2N6729 2N6730 2N6732

    Untitled

    Abstract: No abstract text available
    Text: TO-237 Piastio Package Transistors PNP Maximum Ratings Type No. 2N6708 2N6709 2N6710 Electrical Characteristics (Ta=25”C, U n le ss Otherwise Specified) ^CfiO ^CEO V EB0 (V) Min (V) Min (V) Min PD (W) @Tc=25°c 'c (A) 60 45 5 0.75 1.5 80 100 60 80 5 5


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    PDF O-237 O-237-1 2N6708 CIL916LA CIL916MA CIL928A CIL928AO

    siemens

    Abstract: MXT2907A philips BD139-BD140 BD139 philips 92PE37B bd139 bd140 BD230 FXT651 BD139
    Text: CENTRE COLLECTOR E LINE CRO SS REFERENCE LISTS THROUGH HOLE CENTRE COLLECTOR Part No. 2N6705 2N6706 2N6707 2N6708 2N6709 2N6710 2N6711 2N6712 2N6713 BC368 BC369 BC635 BC636 BC637 BC638 BC639 BC640 BC875 BC877 BC879 BD135 B 0 136 BD137 BD138 BD139 BD140 BD226


    OCR Scan
    PDF 2N6705 2N6706 2N6707 2N6708 2N6709 2N6710 2N6711 2N6712 2N6713 BC368 siemens MXT2907A philips BD139-BD140 BD139 philips 92PE37B bd139 bd140 BD230 FXT651 BD139

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


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    PDF O-220 O-220 O-237-2 00014QÃ T1P42C

    G25CW

    Abstract: CIL10
    Text: cm tq^ pljwsic cr*oc Maxinlum Rfitings Type No. Electrical Characteristics Ta=25”C, Unless Otherwise Specified wCE(SAT) vv BE|S«T) a 'c c* 'c (V) S (V) 0 (mA) (pF) (MHz) (mA) Max Min Max Typ Max Min Typ Max KoH) (ns) Max COIl Case Style 'c ^ceo V EBO


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    PDF 2N6708 O-237-2 O-237-2 TN4235 TN4236 TN4314 G25CW CIL10

    2N6706

    Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
    Text: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base


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    PDF O-237 O-237 O-237-1 O-237-2 TN4037 O-237-2 TN4234 2N6706 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713

    NSDU51

    Abstract: D43C8 NSD6181 0410 2N4234 2N6726 2N6727 92PU51 92PU51A D41D1
    Text: NATL SEMICOND DISCRETE S5E D • bSG113Q 0G377fl7 5 ■ T '21-0t PNP Medium Power Transistors by Ascending Vceo Part No. Vceo \»l Max (mA/V) V « (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237


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    PDF 0G377fl7 T-21-0t 2N6726 O-237 92PU51 D41D1 O-202 D41D2 NSDU51 D43C8 NSD6181 0410 2N4234 2N6727 92PU51A

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    D43C8

    Abstract: nsd6181 NSDU51
    Text: NATL SEflICOND DISCRETE E2E D • bS D113Q 0037767 5 ■ T-27-0/ PNP Medium Power Transistors by Ascending Vce0 Part No. Max (m A /V) Vce (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237 TO-237


    OCR Scan
    PDF D113Q T-27-0/ 2N6726 92PU51 D41D1 D41D2 NSDU51 TN5023 2N4234 2N6727 D43C8 nsd6181