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Microchip Technology Inc 2N6758 MOSFET N-CH 200V 9A TO204AA
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Microchip Technology Inc 2N6756 MOSFET N-CH 100V 14A TO204AA
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Microchip Technology Inc JAN2N6756 MOSFET N-CH 100V 14A TO204AA
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Microchip Technology Inc JANTX2N6758 MOSFET N-CH 200V 9A TO204AA
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Microchip Technology Inc JANTX2N6756 MOSFET N-CH 100V 14A TO204AA
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2N675 Datasheets (150)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N675	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	79.98KB	1
2N675	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	92.2KB	1
2N675	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	93.04KB	1
2N675	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	83.31KB	1
2N675	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	96.96KB	1
2N6751	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=10 / Hfe=8min / fT(Hz)=15M / Pwr(W)=75	Original	PDF	11.79KB	1
2N6751	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF	72.2KB	2
2N6751	General Electric	5 A SwitchMax power transistor. High voltage N-P-N type. - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=10 / Hfe=8min / fT(Hz)=15M / Pwr(W)=75	Scan	PDF	294.2KB	7
2N6751	General Electric	High Voltage Bipolar Power Transistors	Scan	PDF	50.32KB	1
2N6751	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	116.76KB	1
2N6751	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	121.55KB	1
2N6751	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.72KB	1
2N6751	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	73.73KB	1
2N6751	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	174.51KB	1

2N6751	Semelab	Bipolar Transistors (CECC and High Rel) & High Energy	Scan	PDF	45.13KB	1
2N6751	Semiconductor Technology	NPN & PNP High Voltage Silicon High Power Transistors	Scan	PDF	157.6KB	1
2N6752	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=450 / Ic=10 / Hfe=8min / fT(Hz)=15M / Pwr(W)=75	Original	PDF	10.98KB	1
2N6752	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF	72.21KB	2
2N6752	General Electric	5 A SwitchMax power transistor. High voltage N-P-N type. - Pol=NPN / Pkg=TO3 / Vceo=450 / Ic=10 / Hfe=8min / fT(Hz)=15M / Pwr(W)=75	Scan	PDF	294.2KB	7
2N6752	General Electric	High Voltage Bipolar Power Transistors	Scan	PDF	50.32KB	1

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2N675 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6751 Abstract: npn 10a 800v 2N6752 Contextual Info: Inchange Semiconductor Product Specification 2N6751 2N6752 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters	Original	2N6751 2N6752 2N6751 npn 10a 800v 2N6752	PDF
CMD8 Contextual Info: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)	OCR Scan	DD3711b T-39-01 CMD8	PDF
2N6751 Contextual Info: 2N6751 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N6751 O204AA) 31-Jul-02 2N6751	PDF
2N6754 Contextual Info: 2N6754 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N6754 O204AA) 31-Jul-02 2N6754	PDF
2N6758 Abstract: 2n677 2N67 2N6756 2N6757 30saa zn675 Contextual Info: Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8A and 9A, 1 5 0 V -2 0 0 V rDs on = 0.4 Q and 0.6 O Features: • SOA is pow er-dissipation lim ited	OCR Scan	2N6757, 2N6758 50V-200V 2N6757 2N6758 ZN6758 2n677 2N67 2N6756 30saa zn675	PDF
2N6756 Abstract: 2N6755 F102 ISQ0020F Contextual Info: DE I 3 4 t.Ttz.V4 DD2771G Q ~ f A4 3469674 FAIRCHILD SEMICONDUCTOR 84 D 2 7790 2N6755/2N6756 T - 3 ? - / / N-Channel Power MOSFETs, 14 A, 60 V/100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AA These devices are n-channel, enhancement mode, power	OCR Scan	34hcib7M 2N6755/2N6756 2N67S6 2N6755 clb74 E77T4 T-39-11 2N6756 F102 ISQ0020F	PDF
2N6753 Contextual Info: 2N6753 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N6753 O204AA) 31-Jul-02 2N6753	PDF
DD 127 D TRANSISTOR Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760 Contextual Info: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers	Original	2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465	PDF
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6753 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 500(Min.) • High Switching Speed • Low Collector Saturation Voltage	Original	2N6753	PDF
Contextual Info: , One. J. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6752 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 450(Min.) • High Switching Speed	Original	2N6752 100-C	PDF
2N6756 JAN Abstract: 2N6755 Contextual Info: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.	OCR Scan	2N6756 MIL-S-19500/542A contro17) 2N6755 2N6756 JAN	PDF
Contextual Info: 2N6751 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N6751 O204AA) 16-Jul-02	PDF
Contextual Info: 2N6753 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N6753 O204AA) 18-Jun-02	PDF
1A31E Abstract: 2N6759 2N6760 Contextual Info: 3 8 7 5081 G E SOL ID S T A T E 01 DE \| 3fi7SDfll □ □ 1 0 3 *1 5 a r ° • , T ' 3 9 ’ 11 _ Standard Power MOSFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Poyver Field-Effect Transistors 4.5A and 5.5A, 350V - 400V rDs on = 1.0 fi and 1.5 Q	OCR Scan	1A31E T-39-11 2N6759, 2N6760 2N6759 2N6760 2N6/60 1A31E	PDF

Contextual Info: , Una. J x TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2N6751 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 400(Min.) • High Switching Speed	Original	2N6751	PDF
2N6752 Contextual Info: 2N6752 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N6752 O204AA) 31-Jul-02 2N6752	PDF
2N6756 Abstract: TB334 Contextual Info: 2N6756 Data Sheet March 1999 14A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 14A, 100V • rDS ON = 0.180Ω Ordering Information • Majority Carrier Device 2N6756 PACKAGE TO-204AA 1586.2 Features The 2N6756 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications	Original	2N6756 2N6756 O-204AA TB334	PDF
2N6751 Abstract: npn 10a 800v 2N6752 Contextual Info: SavantIC Semiconductor Product Specification 2N6751 2N6752 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters	Original	2N6751 2N6752 2N6751 npn 10a 800v 2N6752	PDF
2N6754 Abstract: 2N6753 Contextual Info: SavantIC Semiconductor Product Specification 2N6753 2N6754 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters	Original	2N6753 2N6754 2N6753 2N6754	PDF
2N6758 Abstract: UPS RELAY CIRCUIT 2N6757 DDE7715 Contextual Info: 64 d F J 3 Li b cît.74 3469674 FAIRCHILD SEMICONDUCTOR «h 0 D 57 7T S 1 84D 27795 2N6757/2N6758 N-Channel Power MOSFETs, 9 A, 150 V/200 V F A IR C H IL D A Schlumberger Company Power And Discrete Division T-39-11 TO-2Q4AA Description These devices are n-channel, enhancement mode, power	OCR Scan	DDE7715 2N6757/2N6758 T-39-11 2N6758 2N675 UPS RELAY CIRCUIT 2N6757	PDF
2N6760 Abstract: 2N6898 2N67 2N6759 Contextual Info: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds	OCR Scan	2N6759, 2N6760 2N6759 2N6760 TQ-204AA 2N6796 O-2I35AF O-205AF 2N6800 2N6898 2N67	PDF
2N6760 Abstract: MF2400 2N6759 E7A04 Contextual Info: ñ4 3469674 FAIRCHILD SEMICONDUCTOR uni n i dËT\| 3 4 b T t , 7 4 □ □ 2 7 A D D 84D 27800 D 2N6759/2N6760 N-Channel Power MOSFETs, 5.5 A, 350 V/400 V F a ir c h ild A Schlum berger Com pany _ Power And Discrete Division D escription These devices are n-channel, enhancement mode, power	OCR Scan	34tTb74 2N6759/2N6760 T-39-11 2N6759 2N6760 2N6760 E7A04 MF2400	PDF
2N6758 Abstract: 6757 Contextual Info: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.	OCR Scan	2N6758 1L-S-19500/542A 2N6758 6757	PDF
Contextual Info: 2N6751, 2N6752, 2N6753, 2N6754 HARRIS SEMICOND SECTOR File N u m be r SbE 1244 4302271 0040b44 71fi H H A S 5-A S w itc h M a ji Power Transistors • 7 = 3 5 -/? TERMINAL DESIGNATIONS High-Voltage N-P-N Types for 240 V Off-Line Power Supplies and Other High-Voltage	OCR Scan	2N6751, 2N6752, 2N6753, 2N6754 0040b44 O-204AA 2N6752 2N6754	PDF

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2N675 Price and Stock

Microchip Technology Inc 2N6758

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Microchip Technology Inc JAN2N6756

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2N675 Datasheets (150)

2N675 Datasheets Context Search

2N6751

CMD8

2N6751

2N6754

2N6758

2N6756

2N6753

DD 127 D TRANSISTOR

2N6756 JAN

1A31E

2N6752

2N6756

2N6751

2N6754

2N6758

2N6760

2N6760

2N6758