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    Rochester Electronics LLC 2N6969

    NPN POWER TRANSISTOR
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    NPN POWER TRANSISTOR
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    Microchip Technology Inc 2N696

    NPN TRANSISTOR
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    Microchip Technology Inc 2N696S

    NPN TRANSISTOR
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    Renesas Electronics Corporation 2N6969

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    2N696 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N696 Central Semiconductor Small Signal NPN Transistor Original PDF
    2N696 Microsemi NPN Medium Power Silicon Switching Transistor Original PDF
    2N696 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Original PDF
    2N696 Central Semiconductor Various Transistors Scan PDF
    2N696 Central Semiconductor Transistor Selection Guide Scan PDF
    2N696 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N696 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N696 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N696 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N696 General Diode Transistor Selection Guide Scan PDF
    2N696 Micro Electronics Semiconductor Devices Scan PDF
    2N696 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N696 Mullard Quick Reference Guide 1977/78 Scan PDF
    2N696 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N696 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N696 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N696 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N696 Unknown Vintage Transistor Datasheets Scan PDF
    2N696 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N696 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N696 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n697

    Abstract: TRANSISTOR 2n697 2N696 2N697 equivalent 2N697 JAN 2N697S 2N696S
    Text: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)


    Original     		PDF MIL-PRF-19500/99 2N696 2N696S 2N697 2N697S 2N696 2N697 MIL-PRF-19500/ MIL-PRF-19500/99) TRANSISTOR 2n697 2N697 equivalent 2N697 JAN 2N697S 2N696S

    2N697 JAN

    Abstract: 2N697
    Text: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)


    Original     		PDF MIL-PRF-19500/ 2N696 2N696S 2N697 2N697S 2N696 2N697 MIL-PRF-19500/99) 2N697 JAN

    2N696

    Abstract: No abstract text available
    Text: 2N696 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N696 O205AD) 2N696

    2N696

    Abstract: No abstract text available
    Text: 2N696 NPN Transistor 3.50 Transistors Bipolar Silicon NPN Low-Power Transistors Am. Page 1 of 1 Enter Your Part # Home Part Number: 2N696 Online Store 2N696 Diodes NP N T rans is to r Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N696 2N696 com/2n696

    2N697

    Abstract: 2N696
    Text: TECHNICAL DATA 2N696 2N697 MIL-PRF QML DEVICES Processed per MIL-PRF-19500/99 NPN MEDIUM-POWER SILICON TRANSISTORS MAXIMUM RATINGS Ratings Symbol Value Units VCBO VEBO PT 60 5.0 0.6 2.0 Vdc Vdc W W Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1


    Original     		PDF 2N696 2N697 MIL-PRF-19500/99 Collector-250 2N696, 2N697

    Untitled

    Abstract: No abstract text available
    Text: 2N6968+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V)30 I(D) Max. (A)7.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)70 Minimum Operating Temp (øC)


    Original     		PDF 2N6968

    2n697

    Abstract: TRANSISTOR 2n697 2N696 2N696S
    Text: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ T A = 250C 1 @ T C = 250C (2)


    Original     		PDF MIL-PRF-19500/99 2N696 2N696S 2N697 2N697S 2N696, 2N696s, 2N697, TRANSISTOR 2n697

    Untitled

    Abstract: No abstract text available
    Text: , One. !j C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N696 NPN SILICON TRANSISTOR JEDEC TO-39 CASE MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL VCBO Collector-Base Voltage UNITS


    Original     		PDF 2N696

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


    Original     		PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N1131 2N1132 2N718A 2N1613 MIL-S-19500 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN

    2N718

    Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


    OCR Scan     		PDF 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, 2N150J. 2N1613. 2N718 SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    BU 4520

    Abstract: 2N6962 TO210AC
    Text: IflE D SILICONIX INC • ÖSS47BS GOISCH? 1 ■ f 2N6962 N-Channel Enhancement Mode Transistor QPL product is in accordance with MIL-S-19500/568 T0-210AC TO-61 Isolated Case TOP VIEW This device contains beryllium oxide PRODUCT SUMMARY ■d V (BRJDSS 100


    OCR Scan     		PDF flSS47BS 2N6962 MIL-S-19500/568 O-210AC 1008C BU 4520 TO210AC

    SE 442

    Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
    Text: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­


    OCR Scan     		PDF MlL-S-19500/99E L-S-19500/99D 2N696 2N697 500/99D. SE 442 MARKING M1W TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent

    BCY56

    Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 BCY59A 2N1131 2N1132 2N4037 BC177

    Transistor BC177

    Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 2N2475 audio BC108 2N1131 2N1132 2N4037 BC177

    BSY52

    Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    N706A

    Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A 2N2368 2N2475 2N1131 2N1132 2N4037 BC177

    BCY78

    Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177 BCY79

    Transistor BC177

    Abstract: 2N3053 ZT87 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 Max VcE sat at V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c 500 1.5 150 500 1.5 150 1000 0.35 150 Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 15 Continued Min f T at at Pto,


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 ZT87 2N1131 2N1132 2N4037 BC177

    2n2396

    Abstract: 2N696 2N2395 TI432
    Text: TYPES 2N2395, 2N2396 N-P-N SILICON TRANSISTORS BU LL E T IN NO. DL-S 646083, OCTO BER 1964 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS Formerly TI432, TI433 • Electrically Similar To 2N696 and 2N697 • Compatible Package For Interfacing with


    OCR Scan     		PDF 2N2395, 2N2396 TI432, TI433 2N696 2N697 2N2395 TI432

    BC337C

    Abstract: bc327c BC338C bc337b 2N1131 2N1132 2N3053 2N4037 2N696 BC107
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 500 1.5 150 15 500 1.5 150 1000 0.35 150 at Continued Min f T at Pto,


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC337C bc327c BC338C bc337b 2N1131 2N1132 2N4037

    2N6964

    Abstract: No abstract text available
    Text: SI LICONIX INC lflE D fCTSiRconix JmM incorporataci • Ô254735 0Q1S1GS 7 2N6964 'T-^e -i3 N-Channel Enhancement Mode Transistor QPL product is in accordance with MIL-S-19500/568 T0-210AC TO-61) Isolated Case TOP VIEW This device contains beryllium oxide


    OCR Scan     		PDF SS473S 2N6964 MIL-S-19500/568 O-210AC T-39-13

    BC238B

    Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC238B BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N4037