2N7237 JANTXV Search Results

IRFM9240

Abstract: 2N7237 23XT
Contextual Info: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED IRFM9S40 2N 7237 JANS2N7237 2N7237 JANTXV2N7237 HEXFET TRANSISTOR : P-CHANNEL REF: M IL -S -1 9 5 0 0 /5 9 5 ] -200 Volt, 0.51 Ohm HEXFET Product Summary

I-383

Abstract: 2n7237 jantx IRFM9240 2N7237 2N7237 JANTXV JANS2N7237 JANTXV2N7237 I-388
Contextual Info: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER l l R | REPETITIVE AVALANCHE RATED AND dv/dt RATED IRFM9S40 2N7S37 JANSSN7S37 2N7237 JANTXV2N7237 TRANSISTOR ] l P-CHANNEL [REF: M IL-S-19500/595] -200 Volt, 0.51 Ohm HEXFET Product Summary T h e HE XFE T technology is the key to International

2N7237

Abstract: ely transformers IRFM9240 JANTXV2N7237 IRFM9S40
Contextual Info: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRPM9B4Q SN7S37 JANS2N7237 2N7237 JANTXV2N7237 [REF: MIL-S-1S500/5S5] -200 Volt, 0.51 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 20 January 2014. INCH-POUND MIL-PRF-19500/595K 20 November 2013 SUPERSEDING MIL-PRF-19500/595J 25 October 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

2N7236

Abstract: army 2N7236 JANTXV 2N7237 2N7236U 2N7237U IRFM9140 IRFM9240
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 January 2011. MIL-PRF-19500/595J 25 October 2010 SUPERSEDING MIL-PRF-19500/595H 22 April 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3

Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for