JANTX2N7237 Search Results

IRFN9240

Abstract: JANTX2N7237U JANTXV2N7237U
Contextual Info: PD - 91554D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9240 JANTX2N7237U JANTXV2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9240 RDS(on) I D 0.51Ω -11A HEXFET® MOSFET technology is the key to International

IRFM9240

Abstract: 2N7237 23XT
Contextual Info: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED IRFM9S40 2N 7237 JANS2N7237 JANTX2N7237 JANTXV2N7237 HEXFET TRANSISTOR : P-CHANNEL REF: M IL -S -1 9 5 0 0 /5 9 5 ] -200 Volt, 0.51 Ohm HEXFET Product Summary

JANTXV2N7237

Contextual Info: PD-90497G IRFM9240 JANTX2N7237 JANTXV2N7237 JANS2N7237 POWER MOSFET THRU-HOLE TO-254AA 200V, P-CHANNEL Product Summary Part Number RDS(on) IRFM9240 0.51Ω REF:MIL-PRF-19500/595 ID HEXFET MOSFET TECHNOLOGY -11A HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 91554E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9240 JANTX2N7237U JANTXV2N7237U JANS2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL Part Number RDS(on) ID IRFN9240 0.51Ω -11A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 90497F POWER MOSFET THRU-HOLE TO-254AA Product Summary Part Number RDS(on) IRFM9240 0.51Ω IRFM9240 JANTX2N7237 JANTXV2N7237 JANS2N7237 REF:MIL-PRF-19500/595 200V, P-CHANNEL ID HEXFET MOSFET TECHNOLOGY -11A HEXFET® MOSFET technology is the key to International

2N7237

Abstract: ely transformers IRFM9240 JANTXV2N7237 IRFM9S40
Contextual Info: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRPM9B4Q SN7S37 JANS2N7237 JANTX2N7237 JANTXV2N7237 [REF: MIL-S-1S500/5S5] -200 Volt, 0.51 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

IRFM9240

Abstract: JANTX2N7237 JANTXV2N7237
Contextual Info: PD - 90497E POWER MOSFET THRU-HOLE TO-254AA IRFM9240 JANTX2N7237 JANTXV2N7237 REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D IRFM9240 0.51Ω -11A HEXFET® MOSFET technology is the key to International

IRFN9240

Abstract: JANS2N7237U JANTX2N7237U JANTXV2N7237U
Contextual Info: PD - 91554E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9240 JANTX2N7237U JANTXV2N7237U JANS2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL Part Number RDS(on) ID IRFN9240 0.51Ω -11A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

IRF P CHANNEL MOSFET 10A 100V

Abstract: 2N7237U P 838 X MOSFET IRFN9240 JANTX2N7237U JANTXV2N7237U smd diode 2F 7A
Contextual Info: PD-91554C IRFN9240 JANTX2N7237U JANTXV2N7237U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -200 Volt, 0.51Ω Product Summary Part Number IRFN9240 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power

IRFM9240

Abstract: JANS2N7237 JANTX2N7237 JANTXV2N7237
Contextual Info: PD - 90497F POWER MOSFET THRU-HOLE TO-254AA Product Summary Part Number RDS(on) IRFM9240 0.51Ω IRFM9240 JANTX2N7237 JANTXV2N7237 JANS2N7237 REF:MIL-PRF-19500/595 200V, P-CHANNEL ID HEXFET MOSFET TECHNOLOGY -11A HEXFET® MOSFET technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

Contextual Info: k> Part Number b vdss RDS on (V) (Q T r=25°C (A) Tf=100°C MA) Pd @ Tr = 25°C m Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs SMD-1 JA N TXV2N 72 !8U 100 .07? 28 20 125 JANTXV2N7219U 904 Ki» 1121 200 .18 18 11 125 90555

Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017

Contextual Info: " F f rN A T if M A I » F C International I Q R Rectifier Government and Space Products h *D ByoSS V Part Number Tf=25°C (A) ^DS(on) (Q ^ T ,= 100°C C (A) @ T f= 2 5 ° C (W) Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3

IRFF320

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numbtr BVDSS 2 (3) (Vdn) R0S(on) (Ohm) N)0 TC-2S* (Amp«} Iq O Tc-IOB* (Amp*) Pq O Tc*2F (Watts) Fax-onDemand Number Case Style, (Case Outline) (1) HEXFET Power MOSFETf Hermetic Package, N- a n d P-Channel