2N7293 Search Results

ge cms 160v 190

Contextual Info: H A R R 2N7293D, 2N7293R 2N72Q3H ,S S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H December 1992 . R adiation Hardened N -C hannel Pow er M O SFETs Package Features • 27A, 200V, RDS<on)» 0.100Q TO-204AE • Second Generation Rad Hard MOSFET Result* From New Design Concepts

1E14

Abstract: 2E12 2N7293D 2N7293H 2N7293R FRK250D
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H 2N7293D, 2N7293R 2N7293H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 27A, 200V, RDS(on) = 0.100Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: 2N7293D1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)27 I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100 IDM Max (@25øC Amb)81 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55

Contextual Info: 2N7293D3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)27 I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100 IDM Max (@25øC Amb)81 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55

FRK250

Contextual Info: H A RR IS S E M I C O N D S E CT OR 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H • 4 3 G2 27 1 G D 4 5 7 3 3 37T H H A S 2N7293D, 2N7293R 2N7293H Radiation Hardened N-Channel Power MOSFETs December 1992

Contextual Info: 2N7293D2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)27 I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100 IDM Max (@25øC Amb)81 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55

Contextual Info: 2N7293H4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)27 I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100 IDM Max (@25øC Amb)81 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55

Contextual Info: m a r r is S E M I C O N D U C T O R 2N7293D, 21^ 2N7293R 7293H REGISTRATION PENDING Currently Available as FRK250 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 27A, 200V, RDS(on) = 0.1 OOii TO-2Q4AE

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

Contextual Info: Pre-Post Radiation Characteristics N-Channel P O S T 10K R A D O R P O S T 100K R A D SI R A T IN G S b (A) R DS(ON) V g S(TH) B V q ss PART NUM BER (£1) 100 2N7271 204AA 14 0.180 R A T ED 200 250 500 P O S T 1M R A D (SI) R A T IN G S F*d s (OM) V GS(TH)

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

2N7291

Abstract: 2N7295 c 3421 transistor 2N7293 FRK150 frk450
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 October 2004. MIL-PRF-19500/606B 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY