2N760A
Abstract: MC 331 transistor 2N757A transistor WFA 2N759A 945 U3d marking MIL-S-19500/218
Contextual Info: MIL-S-19500/218A 23 November 1966 SUPEKSMJING M IL-S-19500/218 SigC 11 October 1961 (See 6 .4) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N757A, 2N750A AND 2N760A This specification is mandatory for use by a ll Depart
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MIL-S-19500/218A
MIL-S-19500/218
2N757A,
2N759A
2N760A
2N757A
2N760A
MC 331 transistor
transistor WFA
945 U3d marking
MIL-S-19500/218
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2n7505
Abstract: IRF5Y9540CM
Contextual Info: INCH-POUND MIL-PRF-19500/748 3 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/748
2N7505T3,
MIL-PRF-19500.
O-257AA
2N7505T3
IRF5Y9540CM
2n7505
IRF5Y9540CM
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2n7508
Abstract: IRF5NJ6215 transistor smd marking 431
Contextual Info: INCH-POUND MIL-PRF-19500/751 27 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/751
2N7508U3,
MIL-PRF-19500.
O-276AA
2N7508U3
IRF5NJ6215
2n7508
IRF5NJ6215
transistor smd marking 431
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2n7507
Abstract: IRF5NJ3315 BL 15 SMD
Contextual Info: INCH-POUND MIL-PRF-19500/750 17 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/750
2N7507U3,
MIL-PRF-19500.
O-276AA
2N7507U3
IRF5NJ3315
2n7507
IRF5NJ3315
BL 15 SMD
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2SC631
Abstract: 2SC632 2SC634 2n7471 A608 transistor pnp 2N7481 ZA-14 FV918 2N625 J3030
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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B170024
4000n
2SC631
2SC632
2SC634
2n7471
A608 transistor pnp
2N7481
ZA-14
FV918
2N625
J3030
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transistor a640
Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor a640
transistor A608
2SC632
transistor 2sC632
2SC634
L14B
Pt-100W
CA3036
DM02B
FV918
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2N1103
Abstract: A608 transistor pnp 2SC631 2SC632 2N3604 FV918 2SC167 2SC166 2N2161 2N1082
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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buy56-4
BUY56-6
buy56-10
BUY72-4
BUY72-6
BUY72-10
2N1103
A608 transistor pnp
2SC631
2SC632
2N3604
FV918
2SC167
2SC166
2N2161
2N1082
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2N7501
Abstract: 2N7502U5 2n7500 2N750 2N7500U5 IRHE57133SE LCC-18 2n7502
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 December 2007. * INCH-POUND MIL-PRF-19500/707A 6 September 2007 SUPERSEDING MIL-PRF-19500/707 6 February 2002 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/707A
MIL-PRF-19500/707
2N7500U5,
2N7501U5,
2N7502U5,
MIL-PRF-19500.
2N7501
2N7502U5
2n7500
2N750
2N7500U5
IRHE57133SE
LCC-18
2n7502
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2N7506U8
Abstract: 2n7506 2N7506U8C MIL-PRF-19500/741 smd transistor marking B5 transistor 3e5 smd IRHNM597110 IRHNMC597110 SMD-02 4d SMD Transistor
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 August 2010. MIL-PRF-19500/749B 21 May 2010 SUPERSEDING MIL-PRF-19500/749A 16 July 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL
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MIL-PRF-19500/749B
MIL-PRF-19500/749A
2N7506U8
2N7506U8C,
MIL-PRF-19500.
2n7506
2N7506U8C
MIL-PRF-19500/741
smd transistor marking B5
transistor 3e5 smd
IRHNM597110
IRHNMC597110
SMD-02
4d SMD Transistor
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PN2222A MOTOROLA
Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate
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RN5816
RN5B16
RN5818
HSE125
HSE210
HSE171
2Nl051
2N2480
2N2479
PN2222A MOTOROLA
valvo
emihus
philco-ford
VALVO GMBH
2SC1330
DIODE 6AA
2N709A
Elcoma
KT503A
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2N7503
Abstract: 2N7503U8
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 January 2009. MIL-PRF-19500/743A 24 October 2008 SUPERSEDING MIL-PRF-19500/743 15 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/743A
MIL-PRF-19500/743
2N7503U8
2N7503U8C,
MIL-PRF-19500.
2N7503
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2n7504
Abstract: 747A MOSFET cross-reference IRHF7110 mmc 4011 E
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 November 2010. MIL-PRF-19500/747A 12 August 2010 SUPERSEDING MIL-PRF-19500/747 12 August 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,
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MIL-PRF-19500/747A
MIL-PRF-19500/747
2N7504T2,
MIL-PRF-19500.
2n7504
747A
MOSFET cross-reference
IRHF7110
mmc 4011 E
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2SC631
Abstract: 2SC632 FV918 2N1082 transistor 2sC632 BCY50 2N7481 a608 2SC402A ML102B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2SC631
2SC632
FV918
2N1082
transistor 2sC632
BCY50
2N7481
a608
2SC402A
ML102B
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A608 transistor pnp
Abstract: 2N7481 2SC632 2SC634 2SC631 140M 3n 2n7471 transistor A608 BSW80 FV918
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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2N3633/52
ME8101
TIX895
1300M5A
1500MS
2500M5
2N2446
2N2379
3000MIA
4000Mt
A608 transistor pnp
2N7481
2SC632
2SC634
2SC631
140M 3n
2n7471
transistor A608
BSW80
FV918
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2N7550
Abstract: 2N7520 2n7546 2n7545 2N7549 2n7479 2N7481 2N7480 2N7471 2N7476
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 April 2009. METRIC MIL-PRF-19500/741A 30 January 2009 SUPERSEDING MIL-PRF-19500/741 14 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED
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MIL-PRF-19500/741A
MIL-PRF-19500/741
MIL-PRF-19500.
2N7550
2N7520
2n7546
2n7545
2N7549
2n7479
2N7481
2N7480
2N7471
2N7476
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2N7509
Abstract: transistor 1020 2N7510 FSGJ264 FSGJ160
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 3 January 2009. INCH-POUND MIL-PRF-19500/687B 3 October 2008 SUPERSEDING MIL-PRF-19500/687A 12 July 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND
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MIL-PRF-19500/687B
MIL-PRF-19500/687A
2N7509,
2N7510,
2N7511,
MIL-PRF-19500.
2N7509
transistor 1020
2N7510
FSGJ264
FSGJ160
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2N7503U8
Abstract: 743b diode 2N7503 743B 2N7503U8C IRHNM57110 SMD-02 smd transistor marking B5 transistor 3e5 smd
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 July 2010. MIL-PRF-19500/743B 22 April 2010 SUPERSEDING MIL-PRF-19500/743A 24 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/743B
MIL-PRF-19500/743A
2N7503U8
2N7503U8C,
MIL-PRF-19500.
743b diode
2N7503
743B
2N7503U8C
IRHNM57110
SMD-02
smd transistor marking B5
transistor 3e5 smd
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