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    2N7582T1 Price and Stock

    Infineon Technologies AG JANSR2N7582T1

    Transistor MOSFET N-Channel 150V 45A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7582T1)
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    Avnet Americas JANSR2N7582T1 Bulk 25
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    Infineon Technologies AG JANSR2N7582T1-11

    Transistor MOSFET N-Channel 150V 45A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7582T1-11)
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    Avnet Americas JANSR2N7582T1-11 Bulk 25
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    2N7582T1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PD-96958A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7582T1 IRHMS67164 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67164 100K Rads (Si) RDS(on) 0.019Ω ID 45A* IRHMS63164 0.019Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original
    PDF PD-96958A O-254AA) 2N7582T1 IRHMS67164 IRHMS67164 IRHMS63164 90MeV/ O-254AA. MIL-PRF-19500

    2N7582

    Abstract: 2N7582T1 IRHMS67164
    Text: PD-96958A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7582T1 IRHMS67164 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67164 100K Rads (Si) RDS(on) 0.019Ω ID 45A* IRHMS63164 0.019Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original
    PDF PD-96958A O-254AA) IRHMS67164 IRHMS63164 2N7582T1 90MeV/ O-254AA. MIL-PRF-19500 2N7582

    2N7586

    Abstract: IRHMS67260 marking code mEV 2n7584 2N7486
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2013. MIL-PRF-19500/753B 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original
    PDF MIL-PRF-19500/753B MIL-PRF-19500/753A 2N7580T1, 2N7582T1, 2N7584T1, 2N7586T1, MIL-PRF-19500. 2N7586 IRHMS67260 marking code mEV 2n7584 2N7486

    2n7584

    Abstract: 2N7486 IN 753A pin configuration 2N7584T1 2N7484 2n7580 2N7586T1 2N7582T1 MIL-PRF19500 2N7580T1
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 August 2010. MIL-PRF-19500/753A 19 May 2010 SUPERSEDING MIL-PRF-19500/753 5 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original
    PDF MIL-PRF-19500/753A MIL-PRF-19500/753 2N7580T1, 2N7582T1, 2N7584T1, 2N7586T1, MIL-PRF-19500. 2n7584 2N7486 IN 753A pin configuration 2N7584T1 2N7484 2n7580 2N7586T1 2N7582T1 MIL-PRF19500 2N7580T1