2N7635 Search Results
2N7635 Price and Stock
GeneSic Semiconductor Inc 2N7635-GATRANS SJT 650V 4A TO257 |
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2N7635-GA | Bulk | 10 |
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2N7635-GA | Bulk | 10 |
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2N7635-GA | 10 |
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Navitas Semiconductor 2N7635-GA |
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2N7635-GA |
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2N7635 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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2N7635-GA |
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FETs - Single, Discrete Semiconductor Products, TRANS SJT 650V 4A TO-257 | Original | 6 | ||||
2N7635M1 | International Rectifier | 60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET in a 14-Lead Flat Pack package; QPL part number related to IRHLG7670Z4 | Original | 312.57KB | 16 |
2N7635 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate |
Original |
2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA | |
2N7635-GA SPICE
Abstract: high-temperature-sic-junction-transistors
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Original |
2N7635-GA sic/sjt/2N7635-GA 2N7635-GA. 12-DEC-2014 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA SPICE high-temperature-sic-junction-transistors | |
Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate |
Original |
2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA | |
2N763Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) |
Original |
PD-97191B 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MO-036AB MlL-STD-750, -164A/ 2N763 | |
Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) |
Original |
PD-97191B 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MlL-STD-750, -164A/Â MO-036AB | |
MO-03Contextual Info: PD-97191A 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω |
Original |
PD-97191A 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MO-036AB MlL-STD-750, -164A/ MO-03 | |
2N7635M1
Abstract: IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763
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Original |
PD-97191B 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MlL-STD-750, -164A/ MO-036AB 2N7635M1 IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763 | |
Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area |
Original |
2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA |