2NS886 Search Results

2N6886

Abstract: 2N5984 transistor 2N5884 2N5883 2N5885 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low Collector-Emitter Saturation Voltage —

Contextual Info: File Number 1041 HARRIS SEMICOND SECTOR 2N5885, 2N5886 SbE ]> • M3G2271 GG4G4Ô7 5M1 « H A S -7 ^ 3 3 -/< 5 High-Current, High Power, High-Speed N-P-N Power Transistors TERMINAL DESIGNATIONS Feature«: ■ Specification tor />re and Vce [sat] up to 25 A

2N5886

Abstract: 2N5885 1740-7D
Contextual Info: ö l 3 8 7 5081 G E SOLID STATE DE | 3 0 7 5 0 0 1 01E File N um ber 17407 0D17407 D General-PurposePower Transistors 1041 2N5885, 2N5886 High-Current, High Power, High-Speed N-P-N Power Transistors

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete