2SA06 Search Results

2SC1383

Abstract: 2SA0683 2SA0684 2SC1384 2SC1383 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). z Complementary Pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR

2sc1384a

Abstract: 2SC1384 SJC00421AED 2SC1384 PANASONIC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1384 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0684 • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2

2sc1384

Abstract: 2sc1383 transistor 2sc1384 NPN transistor 2sc1384 85170
Contextual Info: 2SC1383/2SC1384 TO-92MOD Transistor NPN 1.EMITTER TO-92MOD 2.COLLECTOR 1 2 3 5.800 6.200 3.BASE 8.400 8.800 Features — — 0.900 1.100 0.400 0.600 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. 13.800 14.200

2SA683

Abstract: 2SC1384 ic 2sc1384 2SA0683 2SA0684 2SA684 2SC1383 2SC1383 2SC1384 PANASONIC TRANSISTOR 2sa684
Contextual Info: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683 2SA683 , 2SA0684 (2SA684) 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector to emitter saturation voltage VCE(sat)

2SC1384

Abstract: 2SC1383 2SC1384 PANASONIC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684

2SC1384

Abstract: 2SC1383 2SA0683 2SA0684
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR

transistor 2sa684

Abstract: ic 2sc1384 2SA0683 2SA0684 2SA683 2SA684 2SC1383 2SC1384 NPN transistor 2sc1383 E1808
Contextual Info: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0683 2SA683 and 2SA0684 (2SA684) Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat).

2sc1384

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1384 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0684 • Package M Di ain sc te on na tin nc ue e/ d  Features

2SC1384

Abstract: 2SA684 2SA0683 2SA0684 2SA683 2SC1383
Contextual Info: Transistor 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2

2SA683

Abstract: 2SA0683 2SA0684 2SA684 2SC1383 2SC1384
Contextual Info: Transistors 2SA0683 2SA683 , 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2 8.6±0.2 For low-frequency power amplification and driver amplification

2sc1384a

Abstract: ic 2sc1384 2SC1384 2SA0684 2SC1383 SJC00421AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1384 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0684 • Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 8.6±0.2 For low-frequency power amplification and driver amplification

2SA0683

Abstract: 2SC1383 2SC1384 2SC1384C 2SC1383 2SC1384 PANASONIC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1383 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683 • Package  Low collector-emitter saturation voltage VCE(sat)

2SC1384

Abstract: ic 2sc1384 2SA0683 2SA0684 2SC1383 2SC1383 2SC1384 PANASONIC
Contextual Info: Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Low collector-emitter saturation voltage VCE sat

ft 103

Abstract: Vbe 8 V ic 2sc1384 2SA0683 2SA0684 2SC1383 2SC1384
Contextual Info: Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684 4.9±0.2 13.5±0.5 0.7+0.3

2SA0683

Abstract: 2SA0684 2SA683 2SA684 2SC1383 2SC1384
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping • Absolute Maximum Ratings Ta = 25°C

2sc1384

Abstract: transistor 2sc1384 NPN transistor 2sc1383 2SC1383 transistor 2sc1383 transistor 7800 TO-92L to92l 85170 2SA0683
Contextual Info: 2SC1383/2SC1384 TO-92L Transistor NPN TO-92L 1.EMITTER 4.700 5.100 2.COLLECTOR 7.800 8.200 3.BASE 1 Features — — 2 3 0.600 0.800 0.350 0.550 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. 13.800 14.200

2SA0683

Abstract: 2SC1384 2SA0684 2SA683 2SA684 2SC1383 2SA684 S
Contextual Info: Transistor 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1383 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683 • Package M Di ain sc te on na tin nc ue e/ d  Features

2SA06

Abstract: 2SA60 Silicon PNP epitaxial planar type For low-frequency 2SA0683 2SA0684 2SA683 2SA684 2SC1383 2SC1384
Contextual Info: Transistors 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Complementary pair with 2SC1383 and 2SC1384

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and