2SA0720 Search Results

TO-92B

Abstract: 2SA0720 2SC1318
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1318 • Package  Complementary pair with 2SC1318 

2SA720

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

2SC1318

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2

2SA0720A

Abstract: 2SC1318A
Contextual Info: Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage Base open VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

Contextual Info: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE sat • Complementary pair with 2SA0719 and 2SA0720

transistor 2sa720

Contextual Info: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 5.1±0.2 • Features Symbol Collector to 2SA0719 base voltage

2SC1318

Abstract: 2SC1318 P 2SC1318P 2SC1317 2SA0720 2SC1318C 2SC1318 P,R
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720 • Package  Low collector-emitter saturation voltage VCE(sat)

2SC1318A

Abstract: 2SA0720A 2SA720A
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA0720A 2SA720A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SA0720A

Abstract: 2SA720A 2SC1318A SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1318 • Package M Di ain sc te on na tin nc ue e/ d  Features

2SC1317

Abstract: 2SC1318 2SA0719 2SA0720
Contextual Info: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE sat • Complementary pair with 2SA0719 and 2SA0720

2SC1318 transistor

Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A 2SC1317 transistor
Contextual Info: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 4.0±0.2 5.1±0.2 5.0±0.2 • Complementary pair with 2SC1317 and 2SC1318.

2sc1318

Abstract: 2sc1318c 2SC1318P
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720 • Features  Package  Low collector-emitter saturation voltage VCE(sat)

2SC1318 transistor

Abstract: 2SC1317 2SC1318 2SC1317 transistor 2SA0719 2SA0720 2SA719 2SA720
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0719 and 2SA0720.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720 • Package M Di ain sc te on na tin nc ue e/ d  Features

2sa72

Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A MA2401
Contextual Info: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features Symbol Rating Unit VCBO −30

2SA0720A

Abstract: 2SA720A 2SC1318A
Contextual Info: Transistor 2SA0720A 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

2sC1317 transistor

Abstract: 2SC1318 2SC1318 transistor 2SC1317 2SA0719 2SA0720 2SA719 2SA720 SC-43A
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) 4.0±0.2 5.1±0.2 5.0±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA0720A

Abstract: 2SA720A 2SC1318A
Contextual Info: Transistor 2SA0720A 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

Contextual Info: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features