2SA101 Search Results

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

2SC1815M

Abstract: 2SC1815 2SA1015
Contextual Info: TO SHIBA 2SA1015 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 015 Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 M AX. • High Voltage and High Current. : V c e O - —50V (Min.), Ic = —150mA (Max.)

2SC2334

Abstract: 2SA1010
Contextual Info: Product Specification www.jmnic.com 2SC2334 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1010 ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・DC/DC converters

ic59-64075-G4

Abstract: B6B-XH-A IC-2564 2SA1015Y hirose connector 6 pin Yamaichi ic59 Connector B6B-XH-A 223j 2SA1015 Y 2SA1015-Y
Contextual Info: Video Input Module Evaluation Board -332- Video Input Module SBX1761-01/1762-01 Evaluation Board Component List 1 CXD1177Q LM1881M 2SA1015-Y. GR 2SA1815-Y. GR 5VLW IC25-64075-G4 IC59-64075-G4 B7B-XH-A 1 XHP-7 1 B6B-XH-A 1 XHP-6 13 SXH-001T-P06M BNC-R-PC HIF3B-34PA-2.54DSA

2SA1011

Abstract: 2SC2344
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1011 Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2344 APPLICATIONS • High voltage switching , • Audio frequency power amplifier; • 100W output predriver applications

2SA10150

Abstract: 2SA708Y 2SA1266GR 2SA1015Y 2SA1267GR 2SA1267 2SA562Y 2SA1015 2SA1266-0 2SA5620
Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. 2SA1015 ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 50 50 5 Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Pd (W) 'c (A) @Tc=25"c 0.4 0.15 CBQ ^CB ' ces ^CE (mA) Max @ (V) (MA) Max

2sa1012

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SA1012 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low collector saturation voltage VCE sat =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-220

2sa1015

Contextual Info: UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 1 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified

2SA1012

Contextual Info: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-251 1:BASE 2: COLLECTOR 3: EMITTER

2SA1015 smd

Abstract: 2sa1015 sot-23 2SA1015 BA transistor smd marking BA 2sa1015 equivalent transistor smd marking BA sot-23 2sa1015 smd type smd transistor marking ba transistor 2SA1015 2SA1015
Contextual Info: Transistors IC SMD Type PNP Transistor 2SA1015 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 VCEO:=-50V min. ,IC=-150mA(max.) 0.55 High voltage and high current +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

2SC1815

Abstract: 2SA1015L 2SA1015
Contextual Info: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.

2SA1010

Abstract: 2SA10-10 2SC2334 HIGH VOLTAGE POWER PNP TRANSISTORS transistors pnp 100v 10A
Contextual Info: SavantIC Semiconductor Product Specification 2SA1010 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2334 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters

2sc2562

Abstract: 2SA1012
Contextual Info: SavantIC Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING

2SA1010

Abstract: 5v 10a dc driver ic 2SC2334 2SA10-10
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION •Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 APPLICATIONS ·Developed for high-voltage high-speed switching, and is

2SA1011

Contextual Info: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP 2SA1011 2SA1011 transistor is designed for use in general purpose Power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCE0= 160V Min * DC Current Gain hFE= 60-200@lc= 300mA 1.5 AMPERE

2SC1473

Abstract: 2SA1018 2SA1767 2SC1473A TRANSISTOR 2sc1473
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 High collector to emitter voltage VCEO. High transition frequency fT.

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

2sa1015

Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
Contextual Info: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK

st 2sc1815

Abstract: 2SC1815 ST2SC1815 2SA1015
Contextual Info: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

A1015

Abstract: 2SA1015 2SA1015 GR 2SA1015GR transistor A1015
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.

2SA1016

Contextual Info: ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25℃

Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 0.4Watts of Power Dissipation. Collector-current: -0.15A