2SC1473 Search Results

2SC1473

Abstract: 2SA1018 2SA1767 2SC1473A TRANSISTOR 2sc1473
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 High collector to emitter voltage VCEO. High transition frequency fT.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

2sc1473

Abstract: 2sa1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2

2SA1018

Abstract: 2SC1473 TRANSISTOR 2sc1473
Contextual Info: Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V Collector to emitter voltage

2SA1018

Abstract: 2SA1767 2SC1473 2SC1473A SC-43A 2SA1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SA1018

Abstract: 2SC1473 2SA1767 2SC1473A TRANSISTOR 2sc1473
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm • Features High collector to emitter voltage VCEO. High transition frequency fT. ■ Absolute Maximum Ratings

2SA1018

Abstract: 2SA1767 2SC1473 2SC1473A SC-43A 2SA1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

ic 2SA1018

Abstract: 2SA1018 2SC1473 2SC147
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 • Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

2SC2724

Abstract: 2SC3346 2SD4028 2SC2258 2SC400 2sc2636 2SD1111 4017 2SC3075 2SC3460
Contextual Info: - m ¡g T y p e No. 2SC 3999 it S' 2SC 4000 2SC 400 1 ^ 0 a 0 a 0a 2SC 4002 ^ = 2SC 4003 J ^ = n fâ T 2SC 4004 S H SANYO 2SC4218 & 2SC3751 U B H TOSHIBA NEC B HITACHI ±L s * ± a FUJITSU tä T MATSUSHITA h m M ITSUBISHI □ — A ROHM 2SC1473 2SC2551 2SC3672

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 • Features d p

2SA1018

Abstract: 2SC1473 TRANSISTOR 2sc1473
Contextual Info: Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V Collector to emitter voltage

2SA1767

Abstract: 2SC1473A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2SA1018

Abstract: 2SC1473 TRANSISTOR 2sc1473
Contextual Info: Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.1 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V Collector to emitter voltage VCEO –200

2SA1767

Abstract: 2SC1473A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 M

2SA1018

Abstract: 2SC1473
Contextual Info: Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage Base open VCEO 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

2sa1473

Abstract: 2SC1473 2SA1473A R 2SA1018 2SA1767 2SC1473A SC-43A 2SA1473A
Contextual Info: Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • High transition frequency fT

2SC1473

Abstract: TRANSISTOR 2sc1473 2SA1767 2SA1018 2SC1473A
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm • Features High collector to emitter voltage VCEO. High transition frequency fT. ■ Absolute Maximum Ratings

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

2sa1767

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO