2SA1073 Search Results

2SA1072

Abstract: 2SA1073 VERO dc-dc power 25CC 2SA1072A 2SA107
Contextual Info: FUJITSU MICROELECTRONICS 31E D E3 374=]7b2 GDlbSOfl □ E1FMI T- 3 3 - 2 . 3 January 1990 Edition 1.1 _ P R O D U C T P R O FILE Fujfrsu 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon PNP general purpose, high power

2SA1072

Abstract: 2SA1073 2SC2522
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1072 2SA1073 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SC2522/2523 • Excellent safe operating area • Fast switching speed APPLICATIONS • High frequency power amplifier

2SA1072

Abstract: 2SA1073 2SC2522
Contextual Info: JMnic Product Specification 2SA1072 2SA1073 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC2522/2523 ・Excellent safe operating area ・Fast switching speed APPLICATIONS ・High frequency power amplifier ・Audio power amplifiers

2SA1073

Abstract: 2SC2522 2SA1072
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION •With TO-3 package ·Complement to type 2SC2522/2523 ·Excellent safe operating area ·Fast switching speed APPLICATIONS ·High frequency power amplifier

transistor 2sa 1072

Abstract: "ring emitter" transistor 2SA 2SA audio POWER TRANSISTORS 2SA1072 2SA1073 2SA107 transistors 2SA fujitsu ring emitter transistor 2sc pnp
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1072 2SA1073 ^ September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 2 /2 S A 1 0 7 3 are silicon PNP general purpose, high p ow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­

2SC2523

Abstract: 2SA1073
Contextual Info: SavantIC Semiconductor Product Specification 2SC2523 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA1073 ·Wide area of safe operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators

2SA1072

Abstract: "Audio Power Amplifiers" 2SC2522 2SA1073
Contextual Info: Inchange Semiconductor Product Specification 2SA1072 2SA1073 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC2522/2523 ·Excellent safe operating area ·Fast switching speed APPLICATIONS ·High frequency power amplifier

2SA1073

Abstract: 2SA1072 2sc2523
Contextual Info: cP January 1990 Edition 1.1 - - - FUJITSU PRODUCT PROFILE - 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon P N P general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transitor RET

2SA1073

Abstract: 2SC2523
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1073 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2523 APPLICATIONS

2SA1073

Abstract: 2SC2523
Contextual Info: Inchange Semiconductor Product Specification 2SC2523 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA1073 ·Wide area of safe operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators

Contextual Info: Jeiizu ^£.mi-L.onaiLctoi , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1073 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo=-160V(Min)

2sa10

Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044

2sa1046

Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350

2SC2522

Abstract: fujitsu ring emitter 2sc2523 c1507 2SA1073
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2SC2522/2SC2522A/2SC2523 are silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transiter RET

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

tip340

Abstract: 2sb705 nec BUW23 2sA747A sanken 2SA747A BUW32A B0246C 2SB705 BOX20 2SA747 sanken
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 2SA747 2SA747 2SA878 2SA1067 2SA1040 TIP340 2SA1072 2SA1077 2~1:J10;j2K 55 60 2SB955K 2SA1007 2SA1232R 2SA1232Q 2SA1232P 2N6231 BOX20 BOX20 2SA747A ~~p~~1U6 65 70 2SB705 2SB863 2SA1265

TO-220 JEDEC

Abstract: 2SA1042 2SC2431 Jedec TO-3 FT2551 JEDEC
Contextual Info: Section 1 Ring Emitter Transistors — At a Glance Devio# C a a a n a Polarity M axim um Rating« V c e o (V ) lc (A ) 1-3 2SA1041 2SA1042 2SC2431 2SC2432 JEDEC TO-3 PNP PNP NPN NPN -120 -70 120 70 -15 -15 15 15 1-7 2SA1043 2SA 1044 2SC2433 2SC2434 JEDEC TO-3

2SC4074K

Abstract: TD113ZK FMC5 IMB5 DRE01 fmq1 2SA1073K imb8 IMH10
Contextual Info: Tr HUM T ransistors • Stamping List ! 1M arks are fille d w ith hFE ranks. hFE R anking In d ication Item hn Ranking L 27 - 56 M 39- N P 8 2 - 180 Q R Item h, i Ranking U 560 82 V 5 6 - 120 W X 1800 - 3900 1 2 0 - 270 Y 1 8 0 -3 9 0 A* S 270 - 560 E 390 - 820

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

2SC2509

Abstract: 2SC2541 2SC2534 2SC2499 2SC2539 2sc2547 2SC2495 2SC2510 2SC2530 2sc2555
Contextual Info: - 126 - Ta=25QC, *EpííTc=25°C m 2SC2495-KA 2SC2495—MA 2SC2496A 2SC2497 2SC2497A 2SC2498 2SC2499 2SC2500 2SC2509 2SC2510 2SC2512 2SC2516 2SC2516A 2SC2517 2SC2518 2SC2522 2SC2523 2SC2527 2SC2528 2SC2530 2SC2532 2SC2534 2SC2535 2SC2538 2SC2539 2SC2540