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    2SA1080 Search Results

    2SA1080 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1080 Fujitsu Silicon High Speed Power Transistor Scan PDF
    2SA1080 Fujitsu Silicon PNP Ring Emitter Transistor Scan PDF
    2SA1080 Fujitsu Silicon High Speed Transistors Scan PDF
    2SA1080 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1080 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1080 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1080 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1080 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1080 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1080 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1080 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1080 Unknown Cross Reference Datasheet Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1080 IP \ i PIN 1.BASE 2.COLLECTOR DESCRIPTION 3. EMITTER • Collector-Emitter Breakdown Voltage- TO-220C package


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    PDF 2SA1080 O-220C 2SC2530 -10mA; -10mA 10MHz

    2SC2530

    Abstract: 2SA1080
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1080 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 APPLICATIONS ·Designed for medium power amplifier applications.


    Original
    PDF 2SA1080 2SC2530 -10mA; -10mA 10MHz 2SC2530 2SA1080

    2sa1046

    Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350


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    PDF 2SA1001 2SA1002 2SA1003 1602SA1004 2SA1005 2SA1006 2SA1006A 2SA1006B 2SA1007 2SA1096 2sa1046 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    2SA1080

    Abstract: No abstract text available
    Text: cP January 1990 Edition 1.1 • FUJITSU P R O D U C T P R O F IL E - 2SA1080 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 8 0 is a silicon P NP M .C .-H ea d a m p lifie r use transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor {R E T } technology. R E T devices are


    OCR Scan
    PDF 2SA1080 O-Z20 2SA1080

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    HS 153 SP

    Abstract: 2SA1152 2SA1154 2SA1115 G 2sc2681 2sc2720 2SA1138 2sa1151 2sc2592 2SC2719
    Text: - 22 - T a = 2 5 U *EP(iTc=25^ m z m g & VcBO (V) 2SA1077 VCEO (V) Ic(DO (A) (W) % m Pc* Pc & 14 (Ta=25^) , Ic BO »ÜB (V) Itili) W (V) ic/lE (A) [*EP(ítypí l / . . (V) (V) « le (A) Ib (A) SN Reg/DDC/LF PA -120 -120 -10 60 -50 -120 60 200 -5 -1 -1.8


    OCR Scan
    PDF 2SA1077 2SA1080 2SA1081 2SA1082 SA1063 150mV O-92JB 2SA1137 2SC2676 2SA1138 HS 153 SP 2SA1152 2SA1154 2SA1115 G 2sc2681 2sc2720 2SA1138 2sa1151 2sc2592 2SC2719

    TO-220 JEDEC

    Abstract: 2SA1042 2SC2431 Jedec TO-3 FT2551 JEDEC
    Text: Section 1 Ring Emitter Transistors — At a Glance Devio# C a a a n a Polarity M axim um Rating« V c e o (V ) lc (A ) 1-3 2SA1041 2SA1042 2SC2431 2SC2432 JEDEC TO-3 PNP PNP NPN NPN -120 -70 120 70 -15 -15 15 15 1-7 2SA1043 2SA 1044 2SC2433 2SC2434 JEDEC TO-3


    OCR Scan
    PDF 2SA1041 2SA1042 2SC2431 2SC2432 2SA1043 2SC2433 2SC2434 2SA1072 2SA1072A 2SA1073 TO-220 JEDEC Jedec TO-3 FT2551 JEDEC

    2SC2509

    Abstract: 2SC2541 2SC2534 2SC2499 2SC2539 2sc2547 2SC2495 2SC2510 2SC2530 2sc2555
    Text: - 126 - Ta=25QC, *EpííTc=25°C m 2SC2495-KA 2SC2495—MA 2SC2496A 2SC2497 2SC2497A 2SC2498 2SC2499 2SC2500 2SC2509 2SC2510 2SC2512 2SC2516 2SC2516A 2SC2517 2SC2518 2SC2522 2SC2523 2SC2527 2SC2528 2SC2530 2SC2532 2SC2534 2SC2535 2SC2538 2SC2539 2SC2540


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    PDF 2SC2495-KA 2SC2495-MA 2SC2496A 2SC2497 2SC2497A 2SC2498 2SC2499 2SC2500 O-220ABÂ 2SC2535 2SC2509 2SC2541 2SC2534 2SC2539 2sc2547 2SC2495 2SC2510 2SC2530 2sc2555