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    2SA115 Search Results

    2SA115 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1154 Renesas Electronics Corporation Bipolar Small Signal Transistors, , / Visit Renesas Electronics Corporation
    2SA1156-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SA115 Price and Stock

    3M Interconnect 1U30A-MB2-SA1-150

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30A-MB2-SA1-150 Bulk 55 1
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    3M Interconnect 1U30S-MB2-SA1-150

    USB3 CABLE ASSEMBLY 1.5 METER
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    DigiKey 1U30S-MB2-SA1-150 Box 36 1
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    Mouser Electronics 1U30S-MB2-SA1-150 46
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    Interstate Connecting Components 1U30S-MB2-SA1-150 6
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    3M Interconnect 1U30A-MB2-SA1-150-CE

    USB3 VISON INDUSTRIAL CAMERA CAB
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    DigiKey 1U30A-MB2-SA1-150-CE Bulk 20 1
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    Rochester Electronics LLC 2SA1152-A

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    DigiKey 2SA1152-A Bulk 854
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    ITT Interconnect Solutions CA3106KE20-22S-A115

    CA3106KE20-22S-A115 - Bulk (Alt: CA3106KE20-22S-A11)
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    2SA115 Datasheets (103)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA115 Various Russian Datasheets Transistor Original PDF
    2SA115 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA115 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA115 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA115 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA115 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA115 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA115 Unknown Cross Reference Datasheet Scan PDF
    2SA1150 Toshiba TRANS GP BJT PNP 30V 0.8A 3(2-4E1A) Original PDF
    2SA1150 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1150 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1150 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1150 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1150 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1150 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1150 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1150 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1150 Unknown Cross Reference Datasheet Scan PDF
    2SA1150 Toshiba SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SA1150 Toshiba TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS) Scan PDF

    2SA115 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SA1150 2SC2710 2SA1150 2SC2710

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    Untitled

    Abstract: No abstract text available
    Text: 2SA1156 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)500m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1156

    Untitled

    Abstract: No abstract text available
    Text: 2SA1150Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1150Y Freq120M

    2SA115

    Abstract: No abstract text available
    Text: 2SA115 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)34 I(C) Max. (A) Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2SA115 Freq30M

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original     		PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    Untitled

    Abstract: No abstract text available
    Text: 2SA1150O Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1150O Freq120M

    2SA1150

    Abstract: 2SA115 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SA115 2SC2710

    2SA1150

    Abstract: No abstract text available
    Text: 2SA1150 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1150 Freq120M

    Untitled

    Abstract: No abstract text available
    Text: 2SA1151 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1151 Freq180M

    Untitled

    Abstract: No abstract text available
    Text: 2SA1154 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)700m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1154 Freq120M

    2sA1152

    Abstract: No abstract text available
    Text: 2SA1152 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)300m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1152 Freq100M

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    25C2710

    Abstract: 2SA1150 2SC2710
    Text: TOSHIBA 2SC2710 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : hjpg (1) = 100~320 Complementary to 2SA1150 4.2M A X . M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC2710 2SA1150 25C2710 2SA1150 2SC2710

    N1H1

    Abstract: No abstract text available
    Text: 2SA1150 TOSHIBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 1 5 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2 MAX. • High IrpE : ^FE = 100~320 • Complementary to 2SC2710. 0.55MAX. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SA1150 2SC2710. 55MAX. N1H1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito |CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400


    OCR Scan     		PDF 2SC1815 2SC2888 2SA1158 2SA1015 2SC1923 2SC380TM 2SC941TM 50vMAX

    2SB1545

    Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
    Text: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970


    OCR Scan     		PDF 2SA1156 2SA1110 2SA1383 2SA1535A 2SA1535 2SA1182 2SA1464 2SA1121 2SB970 2SB1545 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709

    2SA1156

    Abstract: 2SA115 2SA 1156 2SC2752 cidc
    Text: PNP SILICON POWER TRANSISTOR 2S A 1156 DESCRIPTION The 2SA1156 is suitable for Low Power Switching regulator, PACKAGE DIMENSIONS DC-DC converter and High Voltage Switch. FEATURES in millimeters inches 8.5 MAX. (0.334 MAX.) • High Breakdown Voltage. • Low Collector Saturation Voltage.


    OCR Scan     		PDF 2SA1156 2SA1156 2SC2752 m-200 2SA115 2SA 1156 cidc

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 FOR AUDIO AM PLIFIER APPLICATIONS • High DC Current Gain : • Complementary to 2SA1150 U nit in mm 4.2M AX. hpE (i) = 100~320 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC2710 2SA1150

    A1150 transistor

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150
    Text: 2SA1150 TOSHIBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. • • High hpE : hRE —100~320 Complementary to 2SC2710. 0.55MAX. M A X IM U M RATINGS (Ta = 25°C) SYMBOL


    OCR Scan     		PDF 2SA1150 2SC2710. 55MAX. A1150 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150

    2SC2710

    Abstract: 2SA1150 C1602
    Text: 2SC2710 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1150 (i) = 100~320 4.2M AX. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC2710 2SA1150 55MAX. 2SC2710 C1602

    A1150 transistor

    Abstract: 2SA1150 2SC2710 A1150
    Text: 2SA1150 TO SH IBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2M AX. • • High hpE • hpE -100~320 Complementary to 2SC2710. 0.55M AX. i-0 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1150 2SC2710. A1150 transistor 2SA1150 2SC2710 A1150