2SA120 Search Results

LED display module

Contextual Info: MULTI CHIP TD62M8603F BIPO LAR DIGITAL INTEGRATED CIRCUIT 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8603F is M ulti Chip 1C incorporates 8 low saturation discrete 2SA1203 transistors. This IC is suitable for a battery use motor drive and LED display module applications.

2SA1201

Abstract: 2SC2881
Contextual Info: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

2SA1202

Abstract: 2SC2882
Contextual Info: T O S H IB A 2SA1202 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER AM PLIFIER APPLICATIONS Unit in mm VOLTAGE AM PLIFIER APPLICATIONS 1.6MAX. —I— 4.6MAX. • Suitable for driver of 30~35 Watts Audio Amplifier • P q = 1~2W (Mounted on CeramicSubstrate)

2SA1205

Abstract: I3002
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1205 Silicon PNP P o w er Transistors DESCRIPTIO N • W ith TO -3PN package • High power dissipation A PP LIC A TIO N S • For general purpose applications PINNING PIN DESCRIPTION 1 Base o Collector:conr>ected to

2SC2881L

Abstract: 032 b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION

2SA1204

Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

2sa1205

Abstract: 2sa120
Contextual Info: Inchange Semiconductor Product Specification 2SA1205 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

power transistor audio amplifier 500 watts

Abstract: 2SA1203 smd diode 03A 2SC2883
Contextual Info: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1203 Features Suitable For Output Stage of 3 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2883 Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: SMD Type Product specification 2SA1202 Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2882 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

2SA1201

Abstract: 2SC2881
Contextual Info: 2SA1201 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1201 ○ 電力増幅用 ○ 励振段増幅用 単位: mm • 高耐圧です。 • トランジション周波数が高い。 : fT = 120 MHz (標準) • 小型フラットパッケージでハイブリッド IC 組立て用に適します。

2SA1201

Abstract: 2SC2881
Contextual Info: 2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1201 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package •

Contextual Info: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

Contextual Info: 2SA1201 TOSHIBA 2 SA 1 2 0 1 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS High Voltage :V C E O = —120V High Transition Frequency : fr = 120MHz(Typ.) P q = 1—2W (Mounted on Ceramic Substrate) Small Flat Package

S500M

Contextual Info: TOSHIBA 2SA1200 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. 4.6MAX. High Voltage 1.7MAX. : V q e o - - 150V 0.4 ±0.05 High Transition Frequency : fx = 120MHz (Typ.) P q = 1 ~ 2W (Mounted on Ceramic Substrate)

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SA1206

Contextual Info: ST 2SA1206 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. On special request, these transistors can be manufactured in different pin configurations. Features ․High frequency current gain ․High speed switching

Contextual Info: Ordering number : EN779C 2SA1209/2SC2911 No.779C SAHYO PNP/NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications i Features • A d o p tio n o f F B E T process • High breakdown voltage • G ood linearity o f h F E and small C o b

SOT-89

Abstract: 2SA1201
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1201 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current : -800 mA ICM Collector-base voltage

2SA1201

Abstract: 2SC2881 A1201
Contextual Info: TOSHIBA 2SA1201 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS High Voltage SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 201 Unit in mm 1.6MAX. 4.6MAX. : V q e O = —120V 1.7MAX. High Transition Frequency : fp = 120MHz (Typ.) 0.4 + 0.05 P q = 1 ~ 2W (Mounted on Ceramic Substrate)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier

2SA1202

Abstract: 2SC2882
Contextual Info: 2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1202 Power Amplifier Applications Voltage Amplifier Applications Unit: mm • Suitable for driver of 30 to 35 watts audio amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)

2SA1208

Contextual Info: Ordering number: EN 7 8 1 F 2SA1208/2SC2910 No.781F PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Audio 80W Output Predriver Applications F eatu res •Adoption of FB E T process. . High breakdown voltage. ■Excellent linearity of hEE and small c0b.

Contextual Info: , U na. I Cx c/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1205 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= -50V(Min) • Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ lc= -5A

2SA1204

Abstract: 2SC2884 A1204 TA155
Contextual Info: TOSHIBA 2SA1204 2 S A 1 204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS High DC Current Gain : hEE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate)