2SA1254 Search Results

2SA1254

Abstract: 2SC2206
Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1254

Abstract: 2SC2206
Contextual Info: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage

10,7mhz

Abstract: 2SA1254 2SC2206
Contextual Info: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open)

Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage

10,7mhz

Abstract: 2SA1254 2SC2206
Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO 30 V Collector-emitter voltage (Base open)

2sc2258 complementary

Abstract: 2SC2206 2SC2258 2SA1254 2SC2258A 2SC2258B Ma0058
Contextual Info: P A N A S O N I C INDL/ELEK-CSEHI} 72C D | b^BSflSM □ □ □ c]145 fi K -7- 3 / - / ? 2SC2206 2SC2206 '> iJ NPN N P N Epitaxial Planar Amplifier 'J /C om plem entary Pair with 2SA1254 2SA1254 6.9±0.1 • 4# ^ /F e a t u r e s • F M /A M y t « 7 R F J i i f l i z f t j » / S u i t a b l e fo r R F A m plifier in F M /

2SC2206

Abstract: 2SA1254 transistor 2Sc2206
Contextual Info: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as

2SA1254

Abstract: 2SC2206
Contextual Info: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current

Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 R 0.9 R 0.7 • Absolute Maximum Ratings Ta = 25°C 1.0 4.1±0.2 2.0±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es

2SA1254

Abstract: 2SC2206
Contextual Info: Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SA1254

Abstract: 2SC2206
Contextual Info: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as

2SA1254

Abstract: 2SC2206
Contextual Info: Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 • Absolute Maximum Ratings Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SA1254

Abstract: 2SC2206
Contextual Info: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • High transition frequency fT • Low collector-emitter saturation voltage VCE(sat)

2SA1254

Abstract: 2SC2206
Contextual Info: Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA1281

Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

2SC2633

Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
Contextual Info: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D | bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463