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21g transistor Abstract: 2SA1306B Contextual Info: TOSHIBA TRANSISTOR 2SA1306B SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency : fT=100MHz (Typ.) . Complementary to 2SC3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC	OCR Scan	2SA1306B 100MHz 2SC3298B 2SA1306B 2SA1306B1 -160V, -10mA, -100mA -500mA, 21g transistor	PDF

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21g transistor

Abstract: 2SA1306B
Contextual Info: TOSHIBA TRANSISTOR 2SA1306B SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency : fT=100MHz (Typ.) . Complementary to 2SC3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

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2SA1306B 100MHz 2SC3298B 2SA1306B 2SA1306B1 -160V, -10mA, -100mA -500mA, 21g transistor

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